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    V06C Search Results

    V06C Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    V06C
    		Renesas Technology 200V 1.1A RECTIFIER DIODE Original PDF 55.92KB 4
    V06C
    		Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 128.01KB 1
    V06C
    		Unknown Cross Reference Datasheet Scan PDF 33.36KB 1
    V06C
    		Unknown The Diode Data Book with Package Outlines 1993 Scan PDF 79.68KB 2
    V06C
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 29.17KB 1
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    V06C Price and Stock

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    Panduit Corp PR2V06CACFSTCBL

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    Avnet Americas PR2V06CACFSTCBL Bulk 14 Weeks 1
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    Sager PR2V06CACFSTCBL 1
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    ITT Interconnect Solutions CIRV06CF-18-12S-F80

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    Master Electronics CIRV06CF-18-12S-F80
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    ITT Interconnect Solutions CIRV06CF-18-13S-F80

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    Panduit Corp HSTTV06-C

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    Newark HSTTV06-C Bulk 1
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    RS HSTTV06-C Tape & Reel 1
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    Sager HSTTV06-C 1
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    Master Electronics HSTTV06-C 2
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    Panduit Corp PR2V06CACFSTCWH

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    Sager PR2V06CACFSTCWH 1
    • 1 $430.09
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    V06C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1S2082

    Abstract: 1S2080 V06C V06J V06E V06G diode V06C
    Contextual Info: GENERAL-USE RECTIFIER DIODE Unit in mm inch • ft Ä • -« * * * » « OUTLINE DRAWING D ire ctio n o f polarity ■FEATURES • F o r general purpose. • Diffused-junction. G lass encapsulated. to <*5 Ö^ passivated I : and Color of cathode band V06C(200V) Black


    OCR Scan     		1s20801s2q811s2082180x1+5v06cv06jv06ev06gdiode v06c PDF

    V06G

    Abstract: V06C V06E V06J PDJ-V06-0 V06C POWER RECTIFIER 11AP
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING 29MIN. 1.14 長 62MIN. (2.44) • 一般電源整流用 •拡散接合形ガラスモールド構造 V06C (200V) V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX


    Original     		29min62minpdj-v06-0v06g+5v06cv06ev06jv06c power rectifier11ap PDF

    V06C

    Abstract: V06C HITACHI hitachi V06E V06-C diode V06C hitachi V06 hitachi rectifier V06C V06E V06J PDE-V06-0
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING V06C 200V V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.


    Original     		29min62minv06cv06c hitachi+8hitachi v06ev06-cdiode v06chitachi v06hitachi rectifier v06cv06ev06jpde-v06-0 PDF

    V06E

    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 FEATURES OUTLINE DRAWING • For general purpose. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS Item Type V06C V06E V06G V06J Repetitive Peak Reverse Voltage V RRM V 200 400 600 800 Non-Repetitive Peak Reverse Voltage


    Original     		pde-v06-2v06e PDF

    V06G

    Abstract: V0-6 11AP
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING V06C 200V V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.


    Original     		62min29minpde-v06-0v06g+2v0-611ap PDF

    V06C

    Abstract: hitachi V06E V06G V06C HITACHI hitachi rectifier V06C v06e V06J diode v06 hitachi PDE-V06-0 V06E diode
    Contextual Info: GENERAL-USE RECTIFIER DIODE V06 OUTLINE DRAWING V06C 200V V06E (400V) V06G (600V) V06J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.


    Original     		29min62minv06chitachi v06e+8v06gv06c hitachihitachi rectifier v06cv06ev06jdiode v06 hitachipde-v06-0v06e diode PDF

    d1763

    Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
    Contextual Info: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of


    Original     		nel2012f03-24d1763d1780d1780 transistor+7transistor d1792d1789 transistord1795d1789nt 407 f transistord1778d1795 transistor PDF

    HY628400LLG-I

    Abstract: DV06 138-884
    Contextual Info: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		hy628400-i512kx1de02-11-may95hy628400lp-i+5hy628400llp-ihy628400lg-ihy628400llg-idv06138-884 PDF

    V06C HITACHI

    Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
    Contextual Info: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage


    OCR Scan     		aw01-06aw01/au01-07v06c hitachidhm3k20+8dhm3hc80hitachi rectifier u05bdhm3g80dfm1sadhm3fg80dam3a hitachidfg2ahitachi v03c PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76 PDF

    nec 0882

    Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
    Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of


    OCR Scan     		nel2012f03-24nec 0882transistor nec 0882 pnec silicon epitaxial power transistor 1694+3al 232 nectransistor 08351652 nec PDF

    NEC CI 506

    Abstract: NEL2012F03-24 P11768EJ1V0DS00 V06C transistor 1654 transistor 1653 1656 nec nec 150 j04
    Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of


    OCR Scan     		nel2012f03-24diclad522tnec ci 506p11768ej1v0ds00+5v06ctransistor 1654transistor 16531656 necnec 150 j04 PDF

    ZSH5MAZ27

    Abstract: ZSH5MA27 ZSH5MT V06C HITACHI ZSH5MT27 IN 47 serise zener diodes data ZSA5A27 hitachi rectifier U05B DSA3A1 V06C
    Contextual Info: Status List Date:Nov. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant Included RoHS exemption substance N:Non compliant Production Status M:Mass production O:Order production W:Working sample A:Abolition •General-Use Rectifier Diodes


    Original     		ks10008zsh5maz27zsh5ma27zsh5mt+7v06c hitachizsh5mt27in 47 serise zener diodes datazsa5a27hitachi rectifier u05bdsa3a1v06c PDF

    ZSH5MAZ27

    Abstract: ZSH5MA27 U05B ZSH5MC27 ZSH5MA27A DSM3MA1 V06C H114B DHM3G80 DSA3A1
    Contextual Info: ステータスリスト 2010.11 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 ◎：適合 ○：適合（但し適用除外項目物質を含有） 【ステータス】 ◎：量産品 ○：受注生産品 ▲：未対応


    Original     		ks10007zsh5maz27zsh5ma27u05b+7zsh5mc27zsh5ma27adsm3ma1v06ch114bdhm3g80dsa3a1 PDF

    1S2080

    Abstract: 1S2082 V06T V06C HITACHI V06C 1S2081 V06J hitachi V06E hitachi rectifier V06C hitachi V06
    Contextual Info: - ^ 4 9 6 2 O 5 HITACHI M Ü P T O E L h ü T R O N l U ä ^ • — Ä S V06 ^ ; 6 8 C 0 9 7 9 2 . 0 ô/'/X 'f ^ — K General-Use Rectifier Diode bû DE J ^ b E O S QDOTT^E -6 2 M IW 2 .4 4 )-2 9M IN 5 .0 M A X ¿ 3.5M A X (0.14)


    OCR Scan     		-62miw229min1s20801s2081+101s208250//f22/isecv06tv06c hitachiv06cv06jhitachi v06ehitachi rectifier v06chitachi v06 PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		tht404zv15azy33azt696+16zv15bzy33bzt697zt706zv27azy62atriac zd 607hep c60042sb5042sc 968 npn transistorsje 607motorola c6004diode by127 specificationsk872af118motorola semiconductor hep c3806p PDF