V MARKING CODE DPAK Search Results

Part Marking Information

Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors D-PAK Part number xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2011 in the assembly line “C” P112C YYYY Assembly lot code Example: Product version optional :

marking code PB

Abstract: rohs-compliant
Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors D-PAK Part number xxxxxxx A Assembly lot code V Example: 1 A This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C Product version (optional):

P012C

Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors D-PAK Part number xxxxxxx V Revision: 04-Nov-11 This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2011 in the assembly line “C” P012C YYYY Assembly lot code Example: Product version optional :

Part Marking Information

Contextual Info: Part Marking Information Vishay Semiconductors D-PAK E Part number Example: xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C YYYY Assembly lot code Product version optional : Z (replaced according below table)

Contextual Info: Part Marking Information Vishay High Power Products D-PAK E Part number Example: xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C YYYY Assembly lot code Product version optional : Z (replaced according below table)

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

mosfet marking code c0

Abstract: TSM4NB65
Contextual Info: TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

TSM4NB60CP

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This

marking A07

Abstract: TS1086 voltage regulator sot 223 18BSC marking code cp sot-223 code marking
Contextual Info: TS1086 1.5A Low Dropout Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description The TS1086 Series are high performance positive voltage regulators are designed for use in applications requiring

DIODE F10

Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

TO-252 N-channel MOSFET

Abstract: 600v 4A mosfet
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4N60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

TS1117 CW ADJ

Abstract: 27BSC TS1117 TS1117CW
Contextual Info: TS1117 1A Low Dropout Positive Voltage Regulator TO-220 TO-252 DPAK TO-223 Pin Definition: 1. Fixed / Adj 2. Output (Tab) 3. Input SOP-8 Pin Definition: 1. Fixed / Adj 2. Output 3. Output 4. Input 8. N/C 7. Output 6. Output 5. N/C General Description TS1117 are high performance positive voltage regulators are designed for use in applications requiring low

SK1045Y

Abstract: SK1040Y SKFM1045Y-D SKFM1045Y-D-TH SK1045
Contextual Info: SKFM1040Y-D FM120-M+ WILLAS THRU THRU 10.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V SKFM10100Y-D FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE-20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

0y marking

Abstract: 8.0A SCHOTTKY BARRIER RECTIFIERS
Contextual Info: SKFM840Y-D FM120-M+ WILLAS THRU THRU 8.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM8100Y-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

ITO-220

Abstract: TSM4N60CH
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

Contextual Info: SKFM640C-D FM120-M+ WILLAS THRU THRU 6.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM6200C-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

marking b07

Abstract: LOW DROPOUT 1.5A 15V TS1086CM-xx
Contextual Info: TS1086 1.5A Low Dropout Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description TS1086 are high performance positive voltage regulators are designed for use in applications requiring low dropout

TH 2190 mosfet

Abstract: ITO-220 TSM4N60CH 02402
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet "marking code 44"

Abstract: TSM2NB60CP
Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

DIODE D12

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This