V 4520 Search Results

4093 BP

Abstract: cd 4093 equivalent V40098D V40511D 40511 4017 BP MC 4011 BCP MC 4093 ZUD 132 ci 4093 equivalent
Contextual Info: i iriilk if^ B c lG l-c te n a n il-i Übersicht CMOS-Schaltkreise CMOS-IC’s Übersicht CMOS-Schaltkreise - CMOS-IC’s V4001 D V 4007 D V4011 D V 4012 D V 4013 D V4015D V4017D V4019D V 4023 D V 4027 D V 4028 D V 4029 D V 4030 D V 4034 D V 4035 D V 4042

v 4520

Abstract: T1078N T1258N T398N T828N Thyristor 606
Contextual Info: M3C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 60 Veff 125 Veff 180 Veff 40 V 200 V 80 V 400 V 115 V 600 V ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L

772 5912

Abstract: DIODE 8069 T718N v 4520 T1509N T1989N T298N T358N T588N T719N
Contextual Info: M3.2C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 220 V 1400 V 280 V 1600 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] [W] 35 350 520 770

Contextual Info: •ìAPt t' i ' PRELIMINARY Am27LV512 Advanced Micro Devices 65,536 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • ■ 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± 0.25 V High performance at 3.3 V Vcc Latch-up protected to 100 mA

H07V-K

Abstract: DB4520001EN
Contextual Info: DATA SHEET SINGLE CORE H07 V-K 4520xxx valid from : 30.11.2006 Application The single core H07 V-K is a flexible non-sheathed cable for internal wiring intended for installation in pipes being on, in and under the plastering as well as in closed installation channels. These cables may not be used for direct

D4518

Abstract: cd4520b C04520
Contextual Info: HARRIS CD4518B, CD4520B Types CMOS Dual Up-Counters High-Voltage Types 2 0 -V o lt Rating Features: • Medium-speed operation — C D 4 5 1 8 B Dual BCD U p-Counter C D 4520B Dual Binary Up-Counter 6 -M H z typical clock frequency at 10 V ■ Positive- or negative-edge triggering

X7R 1206 100V 5 100NF

Abstract: Yageo Ceramic multilayer NPO
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – April 24, 2013 V.11 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

Yageo Ceramic multilayer NPO

Abstract: phycomp capacitors NPO phycomp capacitors X7R yageo Phycomp NPO capacitor 0603CG
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – February 02, 2012 V.9 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 1 µF Product Specification – December 12, 2013 V.12 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Mid-voltage NP0/X7R 100 V TO 630 V 0.47 pF to 2.2 µF Product Specification – April 21, 2014 V.13 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors Mid-voltage

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

Contextual Info: MÄV i o 1993 IND: -30 Advanced Micro Devices PALLV16V8Z-30 Low-Voltage, Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC compatible — Vcc = +3.0 V to +3.6 V ■ Zero-power CMOS technology

Contextual Info: SPLICING GUIDE FOR MIRROR-IMAGE CABLE MIRROR-IMAGE LAY-UP 25 V/S 24 V/BR 23 V/G 22 V/O 12 BK/O 13 BK/G 4 W/BR 3 W/G 10 R/S 9 R/BR 20 Y/S 15 BK/S 5 W/S 1 W/BL 11 BK/BL 21 V/BL 14 BK/BR 2 W/O 6 R/BL 16 Y/BL 7 R/O 17 Y/O 8 R/G 18 Y/G 19 Y/BR 25 PAIR UNIT U-25

Contextual Info: n jn V ? í 1S =' Advanced Micro Devices Am79101 WORLD-CHIP Autodial FSK Modem DISTINCTIVE CHARACTERISTICS • Bell 103,113,108 and CCITT V.21 compatible at 300 bps full-duplex -Call-Progress Tone Detection -Answer-Tone Detection ■ Bell 202 and CCITT V.23 compatible at 1200-bps

malco microdot

Abstract: MALCO CABLE
Contextual Info: ZONE - LTR REVISIONS DESCRIPTION £CN DATE APPROVED REV WED : V REDRA WN CR/<3. RELEASE E .M . IO-Q-G=> L.GL rrÆ/e_ D iS ’S /z '/ z i/ o f A £ V /v /'/O A /i U P ^P a T & 4 6 1 2 E 4-/4 / « .O ' 28840 S H 4038S 4M SS -fr j ' y j J _v .-/J V æ , UPDATE RtV. LETTER.

Contextual Info: Am27C128 16,384 X 8-Bit CMOS EPROM > 3 DISTINCTIVE CHARACTERISTICS fo •vl JEDEC-approved pinout ± 10 % power supply tolerance available One-Time Programmable OTP Flashrite program­ ming Latch-up protected to 100 mA from -1 V to V cc + 1 V Fast access time — 55 ns

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512

Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F256m

Abstract: js28f256m29 JS28F512 256M29EWH
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: SGS-THOMSON l*!M m ^ O T Q *S M54/M74HC4518 M54/M74HC4520 HC4518 DUAL DECADE COUNTER HC4520 DUAL 4 BIT BINARY COUNTER • HIGHSPEED fMAX = 55 MHz (TYP. at Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 ¡lA (MAX.) AT T a = 25 °C ■ HIGH NOISE IMMUNITY Vnih = V n il = 28 % V cc (MIN.)

Contextual Info: PKN 4000 I 50 W DC/ DC Power Module 48 V Input Series • Regulated single and dual outputs • Efficiency >90% 3.3 V from 30% to full load • Low profile 8.5 mm (0.335 in.) • 500 V dc isolation voltage • MTBF >200 years at +75°C case temperature • Full power up to +80°C ambient

Contextual Info: »MR l i las« P R E L IM IN A R Y il Am27LV020 Advanced Micro Devices 262,144 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read o peration Program voltage 12.75 ± .25 V ■ High p erfo rm an ce at 3.3 Vcc