US1X Search Results

MRA400x

Abstract: SS2x B340A ES2x SSA23L BYG23M BYG22 s1xl SMB Package SMBYW01
Contextual Info: Vishay Gen Semi PDD Cross Reference Guide Ultra Fast Fast Standard Chip Tech Package Gen Semi Gen Semi Alternative S1Px S1x BYG10x S2xMA S2x S3x S5x S4Px GF1x RS1x RS2x RS3x RS1Px ESH1Px ES1Px ES1x US1x BYG20x BYG22x BYG23M ES2x MURS2x0 1.0 1.0 1.5 1.5 2.0

DIODE US1J

Abstract: us1j diode diode 400v 0.5a US1G diode US1M 61 ULtra FAST diode
Contextual Info: US1x Series Features: • • • • • • • • • • Glass passivated junction chip. For surface mounted application. Low profile package. Built-in strain relief. Ideal for automated placement. Easy pick and place. Ultrafast recovery time for high efficiency.

Contextual Info: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss

US1M spice

Abstract: US1x
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability

US1M MARKING CODE

Abstract: marking us1m us1m
Contextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability Ideally Suited for Automated Assembly B

us1m diode

Abstract: do-214ac footprint marking of US1J diode US1K-T3
Contextual Info: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss

philips zener diode

Abstract: philips cfl Philips Semiconductors philips datasheet surface mount zener diode BYV26x PHILIPS DIODE JTP 68 diode rf semiconductors BYW63 circuit tv Philips 14
Contextual Info: Philips Semiconductors 1 Philips Discretes and MultiMarket ICs Medium Power Rectifiers 1 Philips Semiconductors Medium Power Rectifiers Ratings of Medium Power Rectifiers? • Reverse Voltage 50 - 2000 V. • Available in leaded and SM versions 2 2 • Switching speed 5 ns - 5 µs.

Contextual Info: US1A - US1M creat by ART Pb 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC RoHS COMPLIANCE Features — Glass passivated chip junction — For surface mounted application — Low profile package — Built-in strain relief — Ideal for automated placement

kc 2026

Abstract: DO-214AC KC us1s
Contextual Info: E US 1 A - US 1 M TAIWAN SEMICONDUCTOR tò RoHS 1.0 Amps. Surface Mount High Efficient Rectifiers 5 MA/DO-214AC C O M P L IA N C E Li Features & G la s s p a s s iv a t e d j u n c tio n c h ip <> T o r s u r fa c e m o u n t e d a p p lic a tio n '> •>

US1M R2

Abstract: US1M MARKING CODE folded sma package
Contextual Info: US1A - US1M creat by ART 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Features — Glass passivated chip junction — For surface mounted application — Low profile package — Built-in strain relief — Ideal for automated placement — Easy pick and place

Contextual Info: US1A - US1M Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features Mechanical Data • • • • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability

marking us1m

Abstract: US1A
Contextual Info: US1A - US1M Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features Mechanical Data • • • • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability

CD95F

Contextual Info: E US1A- US1M TAIWAN SEMICONDUCTOR RoHS 1.0 Amps. Surface M ount High Efficient Rectifiers 5MA/DO-214AC C O M P L IA N C E nwii.xi: Li TÜ7E5T5Í I.mrcay. Features <> •£• •> ■fr <> •> .■Kiyi.u: ' .■uiyi.ir.-_ ' G lass passivated j unction ch ip

Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss

US1M MARKING CODE

Abstract: J-STD-020D US1A-13-F
Contextual Info: US1A - US1M Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency

US1M SMA

Abstract: J-STD-020D US1A-13-F US1x-13-F US1x
Contextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Please click here to visit our online spice models database. Features • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak

Contextual Info: US1A – US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak

us1x

Contextual Info: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE US1A-US1M 1.0 AMP. High Efficient Surface Mount Rectifiers SM A/DO-214AC .050 1.27 L[ w .111(2.83) .090(2.29) 1 Features -0•4* -0■> -v■> ■> -0-v- UL Recognized File # E-326243 Glass passivated junction chip

marking code 19s

Contextual Info: US1A- US1M TAIWAN SEMICONDUC m 1.0 Amps. Surface Mount High Efficient Rectifiers RoHS SMA/DO-214AC COMPLIANCE .062 1.58 ,050(1.27) n t .111(2.83) ,090(2.29) Features .181(4.60) .160(4,06) 4- G lass pa ssiva te d ju n c tio n chip ❖ For su rfa c e m o unte d a p plicatio n

US1M MARKING CODE

Abstract: US1M spice marking c y US1D US1J US1A-13 marking us1m
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss

Contextual Info: US1A - US1M creat by ART 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Features — Glass passivated chip junction — For surface mounted application — Low profile package — Built-in strain relief — Ideal for automated placement — Easy pick and place

Contextual Info: US1A thru US1M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Ultrafast recovery time for high efficiency - Built-in strain relief

DIODE US1J

Abstract: US1K-T3
Contextual Info: US1A – US1K WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak

US1M MARKING CODE

Abstract: US1M
Contextual Info: US1A - US1M creat by ART Pb 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Glass passivated chip junction — For surface mounted application — Low profile package — Built-in strain relief