SS2X Search Results

SS2x

Abstract: 150v 1A schottky diode SS115 SS13 SS15 SS22 SS23 SS25 SS29
Contextual Info: SS2x Series Features: • • • • • • • • • For surface mounted application. Easy pick and place. Metal to silicon rectifier, majority carrier conduction. Low power loss, high efficiency. High current capability, low VF. High surge current capability.

S2M diode

Abstract: SS2x diode s2m DIODE S2B multicomp sma diode s1m sma
Contextual Info: SS2x Series Features: • • • • • • • • For surface mounted application. Glass passivated junction chip. Low forward voltage drop. High current capability. Easy pick and place. High surge current capability. Plastic material. High temperature soldering: 260°C/10 seconds at terminals.

SS2x

Contextual Info: SS2X GYM SS2X G Y M = = = = Specific Device Code Green Compound Year Work Month C08 C08

Contextual Info: SS2XL GYM SS2XL G Y M = = = = Specific Device Code Green Compound Year Work Month E08 E08

Contextual Info: .fi­ nie No. 4.20 I l I I II L U U U U U U T ]U IU IUI U IUIU IUIU UIIL ?op ~ ~ ~ ~ ~ ~ ~ ~ ~ r i J LJ ~ I SH E E T _Q_ 1 /1 InsulatorGlass fiTlwi thennoplastic plyestEr,aelfextin­ guishing UL 94 V-0,colonr hlndr,resistant to minenl adds, solvents, greases, oOs short time .

Contextual Info: W9320 V . . . =* tie c lr o ü ic s Corp. ADPCM CODEC Table of Contents- 1. GENERAL 2. FEATURES. 2

Contextual Info: SS22L - SS215L creat by art 2.0AMPS Surface Mount Schottky Barrier Rectifiers Sub SMA Features — For surface mounted application — Low-Profile Package — Idea for automated pick & place — High current capability, low VF — High surge current capability

Contextual Info: SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak

marking TA1S

Abstract: SS22L
Contextual Info: E SS22L - SS215L TAIWAN SEMICONDUC [Pb 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers Sub SWA RoHS COMPLIANCE kXfe'Jt Uj m é \ — L t Features ft 1 -+ ? ♦; o I :iz.ry ❖ For s u rg e s moun led apptica Ucn ❖ <' L o w -P io flla P a c k a g e ❖

Contextual Info: 8 F ile Number Of Pins—1 X2.54 l U I 441 SHEET ±_Z1 MATERIALS Pin(Outer Sleeve): Brass,Machined,CuZn38Pb2 Clip(Contact Finger): Beryllium Copper,Heat Treated P lating(O uter Sleeve): Tin Plated: 2u” m /8 0 u ” N icke l,5 u m /2 0 0 u ” Tin Gold Plated: 2u” m /8 0 u ” Nickel,Full Gold

T161-160

Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.

Contextual Info: SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

403A-03

Abstract: SS22 SS22T3 SS24 SS24T3 ss2410
Contextual Info: SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

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Contextual Info: SS22L thru SS215L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

SS24 SMB

Abstract: marking SS24
Contextual Info: SS22, SS24 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: SS22 - SS215 creat by art 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Features — For surface mounted application — Easy pirk and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency — High current capability, low VF

Contextual Info: SS22 thru SS215 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020

Contextual Info: SS22M thru SS24M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SS22L thru SS215L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020

Contextual Info: SS22L - SS215L 2.0AMPS Surface Mount Schottky Barrier Rectifiers Sub SMA Features ­ For surface mounted application ­ Low-Profile Package ­ Idea for automated pick & place ­ High current capability, low VF ­ High surge current capability ­ Plastic material used carriers Underwriters

N8097BH

Abstract: n8097bh-plcc 8X9X-90 p8095 270361 N8397BH 809xbh P8095BH-P-DIP
Contextual Info: m m m m s m 809XBH/839XBH/879XBH ADVANCED 16-BIT MICROCONTROLLER WITH 8- OR 16-BIT EXTERNAL BUS Automotive • Extended Automotive Temperature Range -40 °C to + 125°C Case ■ High Performance NMOS Process ■ High-Speed I/O Subsystem ■ Full Duplex Serial Port

MRA400x

Abstract: SS2x B340A ES2x SSA23L BYG23M BYG22 s1xl SMB Package SMBYW01
Contextual Info: Vishay Gen Semi PDD Cross Reference Guide Ultra Fast Fast Standard Chip Tech Package Gen Semi Gen Semi Alternative S1Px S1x BYG10x S2xMA S2x S3x S5x S4Px GF1x RS1x RS2x RS3x RS1Px ESH1Px ES1Px ES1x US1x BYG20x BYG22x BYG23M ES2x MURS2x0 1.0 1.0 1.5 1.5 2.0

Contextual Info: SS22M thru SS24M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: SS22T3G, SS24T3G, NRVBSS24T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low