UPC3218 Search Results

Contextual Info: GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV UPC3217GV FEATURES VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain 60 Voltage Gain, GV dB • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP

automatic gain control

Abstract: catv bridge amplifier UPC3217GV UPC3217GV-E1 UPC3218GV UPC3218GV-E1 UPC3219GV
Contextual Info: GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP • ON-CHIP VIDEO AMPLIFIER:

UPC3217GV

Abstract: UPC3217GV-E1 UPC3218GV UPC3218GV-E1 UPC3219GV
Contextual Info: NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP

UPC3217GV

Abstract: UPC3217GV-E1-A UPC3218GV UPC3218GV-E1-A UPC3219GV uPC3217 Automatic Gain Control
Contextual Info: 5 V AGC AMPLIFIER + UPC3217GV VIDEO AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.25 VP-P at single-ended output • PACKAGED IN 8 PIN SSOP SUITABLE FOR

low frequency automatic gain control

Abstract: UPC3217GV UPC3217GV-E1-A UPC3218GV UPC3218GV-E1-A UPC3219GV Automatic Gain Control catv bridge amplifier
Contextual Info: 5 V AGC AMPLIFIER + UPC3217GV VIDEO AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.25 VP-P at single-ended output • PACKAGED IN 8 PIN SSOP SUITABLE FOR

low frequency automatic gain control

Abstract: catv bridge amplifier 18GV
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC3217GV / UPC3218GV 5 V AGC AMPLIFIER + VIDEO AMPLIFIER VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.25 VP-P at single-ended output

Contextual Info: NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP

Contextual Info: GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP • ON-CHIP VIDEO AMPLIFIER:

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

617DB-1674

Abstract: HP8970
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

3231 audio ic

Abstract: nec 14 tv diagram 617DB-1674 PC3231GV
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3231GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The μPC3231GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem and digital terrestrial systems. This IC consists of gain control amplifier and video amplifier.

ic isl 887

Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
Contextual Info: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3

26 sot-363 rf power amplifier

Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
Contextual Info: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

UPC8236

Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .