UPC2714 Search Results

Contextual Info: NEC”LOW POWER CONSUMPTION UPC2714T UPC2715T SILICON MMIC AMPLIFIER FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

Contextual Info: SEC 8 1983 LOW POWER CONSUMPTION SILICON MMIC AMPLIFIERS UPC2714T UPC2715T FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, lex; = 4.5 mA • HIGH POWER GAIN: 20 dB(UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • SUPER SMALL PACKAGE

Contextual Info: N B C LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER UPC2714T UPC2715T FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc - 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

104 c1k

Abstract: 103 c1k UPC2714 UPC2714T UPC2714T-E3 UPC2715 UPC2715T UPC2715T-E3
Contextual Info: LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER UPC2714T UPC2715T GAIN vs. FREQUENCY FEATURES 20 • LOW POWER CONSUMPTION: 15 mW VCC = 3.4 V, ICC = 4.5 mA UPC2715 15 Gain, GS (dB) • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T)

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5

MARKING c1y

Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART