UPA82 Search Results

NE681

Abstract: S21E UPA822TF
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA822TF OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 65 mA PACKAGE OUTLINE TS06

BA 7312

Abstract: ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: P ackage O u tlin e TS06 (T o p View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A

UPA826TC-T1

Abstract: BF109 NE685 S21E UPA826TC vaf meter
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency

IC 7448

Abstract: pin configuration of 7496 IC UPA827TF pin configuration ic 7448 pin configuration NPN transistor 9013 npn NE686 S21E UPA827TF-T1-A 8 pin ic 3842 NEC 14324
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • UPA827TF OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: |S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA

UPA827TF

Abstract: k 3531 transistor
Contextual Info: PRELIMINARY DATA SHEET UPA827TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline T S 06 (Top View) |S 2 ie |2 = 9 dB T Y P at f = 2 G Hz, V ce = 2 V, Ic = 7 m A

transistor c 3531

Abstract: UPA826
Contextual Info: PRELIMINARY DATA SHEET UPA826TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Package Outline TS 06 (Top View) Cre = 0.4 pF TYP SMALL PACKAGE STYLE:

HA 12045

Abstract: IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package

nec 16312

Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (U nit: mm) Low noise NF = 1 .3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz

pin IC 7479

Abstract: NE685 S21E UPA826TF UPA826TF-T1 pt 6964
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • • • • UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package

NE688

Abstract: S21E UPA829TF UPA829TF-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA829TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency

9013 npn transistor pin view

Abstract: pin configuration of 7496 IC NEC 14324 ic ma 4810 15251 hfe 4538 UPA827TF pin configuration ic 7448 IC 7432 5942
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA827TF PACKAGE DRAWING Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline TS06 (Top View) IS 2 1 EI2 = 9 dB T Y P a t f = 2 G H z, V ce = 2 V, Ic = 7 mA

k 3531 transistor

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)

ha 13483

Abstract: j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: Package O utline TS06 (Top View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A

capacitance meter

Abstract: "capacitance meter" NE856 S21E UPA821TC UPA821TC-T1 t2 high frequency transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA821TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA821TC contains two NE856 NPN high frequency

ic pe 5571

Abstract: pe 5571 ic 7483 pin configuration 7402 ic configuration ic 3994 ic 4017 pin configuration on 5295 transistor IC 7449 ic LC 8720 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA821TF OUTLINE DIMENSIONS Units in mm LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • HIGH GAIN: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • SMALL PACKAGE STYLE:

ic 7809

Abstract: OF IC 7809 UPA828TF-T1 NE687 S21E UPA828TF 3699 npn electrical characteristics IC 7809
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS Unit in mm • LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, VCE = 2 V, lc = 3 mA • HIGH GAIN: |S21E|2 • UPA828TF Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1

7082 B ic audio amplifier

Abstract: SN 16880 14 pin ic 4027 TRANSISTOR NPN 16085 TRANSISTOR SN 532-3 NEC 4570 IC 7487 transistor lc 7822 n transistor 9527 IC AT 6884
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAG E DRAWINGS (U nit: mm) FEATURES • Low noise and high gain •

Contextual Info: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF

150J10

Abstract: mje 13006
Contextual Info: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1) 3. Collector (Q2)

KF 517

Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose