UNR211F Search Results

unr211

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN211F

Abstract: UNR211F XN0111F XN111F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111F (XN111F) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package

UP03383G

Abstract: UNR211F UNR2213
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

UP04383G

Abstract: UNR211F UNR2213 transistors 10 KW
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (transistors with built-in resistor)

UNR211F

Abstract: XN0111FG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111FG Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

UN211F

Abstract: UNR211F XN0111F XN111F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111F (XN111F) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 1.1+0.2 –0.1

UNR2110

Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud

UNR211F

Abstract: UNR2213 XP03383
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)

UNR211F

Abstract: UNR2213 XP03383
Contextual Info: Composite Transistors XP03383 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)

UNR2119

Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Contextual Info: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UNR211F

Abstract: XN0111FG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111FG Silicon PNP epitaxial planar type For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

UN211F

Abstract: UNR211F XP0111F XP111F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111F (XP111F) Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

UP03383G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features  Package  Two elements incorporated into one package (Transistors with built-in resistor)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431NG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features  Package  Two elements incorporated into one package (Transistors with built-in resistor)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 1 2 3 (0.50) (0.50) (0.20) • Two elements incorporated into one package

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111F (XP111F) Silicon PNP epitaxial planar type (0.425) 0.20±0.05 4 0.2±0.1 M Di ain sc te on na tin nc ue e/ d 1 5˚ 5 • Features • Two elements incorporated into one package

ic 2114

Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
Contextual Info: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor

UN211F

Abstract: UN211H UNR211F UNR211H XN0611FH XN611FH
Contextual Info: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 2 0.50+0.10 –0.05 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage