UNIJUNCTION APPLICATION NOTE Search Results

2N6027

Abstract: 2N6028 2N6028 Application Note unijunction application note 2n6027 gate current 20
Contextual Info: 2N6027 2N6028 Program m able Unijunction Transistors Silicon Programmable Unijunction Transistors PUTs 40 VOLTS 300 mW . designed to enable the engineer to "p ro g ra m " unijunction characteristics such as Rbb- V> !V' and Ip bY merely selecting two resistor values. Application includes

diac SBS 14

Abstract: DIAC EQUIVALENT circuit DIAC 1n5760 DIAC EQUIVALENT SBS thyristor 1N5760 DIAC application MOTOROLA SCR CIRCUITS BY USING 2N6027 DIAC thyristor application
Contextual Info: MOTOROLA SEMICONDUCTOR r APPLICATION NOTE AN964 T rig g e r D esign Ideas for D iac Replacem ents INTRODUCTION T h e fam ily o f d e v ic e s d e sig n e d for controlling S C R s and triacs are called triggers. T h e m ore c o m m o n trigge rs are unijunction tra n sisto rs, p ro g ra m m a b le unijunction

TIS43 Unijunction Transistor

Abstract: tis43 unijunction transistor TIS43 EQUIVALENT TRANSISTOR TIS43 6B10706 unijunction application note
Contextual Info: TYPE TIS43 P-N PLANAR SILICON UNIJUNCTION TRANSISTOR BU LLETIN NO. DL-S 6B10706, F E B R U A R Y 1968 PLAN AR UNIJUNCTION S IL E C T t T R A N SISTO R t FOR APPLICATION IN SCR D R IV E R S , MOTOR-SPEED CO N TRO LS, TIM ERS, W AVEFORM G EN ER A T O R S, M U LTIV IB R A TO R S, RING CO U N TERS,

2N6116

Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Contextual Info: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes

BRY39

Abstract: Programmable Unijunction Transistor "Programmable Unijunction Transistor" transistor equivalent k 2134 transistor unijunction application note BRY39 application data BRY39 circuit DK 51* transistor unijunction transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D082 BRY39 Programmable unijunction transistor/ Silicon controlled switch Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24 Philips Semiconductors Product specification

UJT 2N2646 specification

Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

UJT 2N2646 specification

Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

"Programmable Unijunction Transistor"

Abstract: Programmable Unijunction Transistor BRY56 transistor K 2333 BY206 bry56 EQUIVALENT k 2134 transistor unijunction transistor str 6707 equivalent unijunction application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BRY56 Programmable unijunction transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 21 Philips Semiconductors Product specification Programmable unijunction transistor

GE TRIAC SC40B

Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

2N6028 Application Note

Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

MPU131

Abstract: MPU132 MPU133 2sa 2160 thyristor applications programmable unijunction
Contextual Info: MPUl31 SILICON thru MPU133 SILIC O N P R O G R A M M A B LE UNIJUNCTION T RA N SISTO R S 40 V O L T S 3 7 5 mW S IL IC O N PR O G R A M M A B LE UNIJUNCTION T R A N SIST O R S . . . designed to enable the engineer to “program " unijunction characteristics such as R b b < V» *V* and *P bV merely selecting two

2n6027

Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

bry39

Abstract: BRY39 circuit
Contextual Info: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two

UNITRODE U-66

Abstract: U13T1-U13T2 unijunction application note U13T1 U13T2 U131
Contextual Info: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEATURES DESCR IPTIO N • • • • • • The Unitrode herm etically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These

u13t1

Abstract: UNITRODE U-66 U13T2 unijunction application note
Contextual Info: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEA TU RES DESCRIPTION • • • • • • The Unitrode hermetically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These

2N6137

Abstract: unijunction application note
Contextual Info: 2N6137 PUTs Military, Planar, TO-18, Hermetic / - a s ' - o FEATURES • Available as JAN and JANTX types per MIL standard 19500/493 • — to -f-125’ 0 Temperature Range for Timing and Oscillator Circuits • l , < l V A a t T = -55»C I , > 40*A at T = +125'C

UNITRODE U-66

Abstract: P13T1-P13T2 UNITRODE SCR 045 P13T1 UNITRODE TRANSISTORS UNITRODE application note P13T2 unitrode Applications Note UNITRODE unijunction application note
Contextual Info: P13T1-P13T2 PUTs Planar, TO-92, Plastic FE A T U R E S D ESCR IP TIO N • • • • • • Functionally equivalent to standard unijunction transistors, Unitrode's Programmable Unijunction Transistors offer the distinct advantage of versatile programming. External

2N6119

Abstract: Unitrode Semiconductor UNITRODE U-66 unijunction application note
Contextual Info: MICROSENI CORP/ WATERTOWN p jjjg SDE » • ^347^3 GG1253b 373 M U N I T 2N6119-2N6120 Planar, TO-18, Hermetic FEATURES • Hermetically Sealed TO-18 Metal Can • Programmable Eta, R6B, lPand lv • Maximum Peak Point Current: 150nA • Minimum Valley Current to 1,5mA

2N6027 MOTOROLA

Abstract: ECEA1VU470 220v light dimmer zener motorola ECEA1VU4R7 ECE-A1VU100 PWM circuit dimmer EL7316A ECEA1VU100 transistor 2n6027 with circuit diagram
Contextual Info: October 1996 Application Brief 42021 Control Interface for Standard 0 - 10VDC Dimmers INTRODUCTION This Application Brief describes a very simple and cost effective interface circuit that, when used with a standard 0 to 10 VDC manual dimmer such as the Honeywell

UJT 2N2646 specification

Abstract: 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B uni junction transistor 2N2646 thyristor scr oscillator circuit GE SCR Manual General electric SCR manual 2N4891
Contextual Info: UNIJUNCTIONS, T R IG G ER S A N D S W IT C H E S Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

Contextual Info: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)

2N4852

Abstract: 2N4853 2N4851 unijunction transistor transistor 2n4852
Contextual Info: M O T O R O L A 2 N 4 8 5 1 thru 2 S IL IC O N A N N U L A R * U N IJ U N C T IO N T R A N S IS T O R S IN I 4 8 5 3 PN UNIJUNCTION TRANSISTORS . . . d es ig n ed fo r pulse a nd tinning c irc u its , sen sin g c irc u its , and th y ris to r trig g e r circu its .

UJT 2N2646

Abstract: 2n2646 ujt UJT 2N2646 POWER RATING UJT 2N2646 specification applications of ujt ujt transistor 2n2160 UJT 2N2646 operation UJT 2N491 UJT APPLICATION UJT 2N2646 ratings
Contextual Info: U N IJU N C TIO N S, TR IG G E R S A ND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can