UN1231 Search Results

Contextual Info: Transistors with built-in Resistor UNR1231/1231A UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 2.5±0.1 6.9±0.1 ● (1.0) 4.5±0.1 2.0±0.2 High forward current transfer ratio hFE. M type mold package. Costs can be reduced through downsizing of the equipment and

UNR1231

Abstract: UNR1231A a1025
Contextual Info: Transistors with built-in Resistor UNR1231/1231A UN1231/1231A Silicon NPN epitaxial planar transistor Unit: mm 2.5±0.1 6.9±0.1 ● (1.0) 4.5±0.1 2.0±0.2 High forward current transfer ratio hFE M type mold package Costs can be reduced through downsizing of the equipment and

UNR1231

Abstract: UNR1231A
Contextual Info: Transistors with built-in Resistor UNR1231/1231A UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 • Absolute Maximum Ratings Parameter 1.0 0.4 7 0. R 0.55±0.1 3 Ratings UNR1231 Collector to emitter voltage UNR1231A 20 IC 0.7 A Peak collector current

UN1231

Abstract: UN1231A
Contextual Info: Transistors with built-in Resistor UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 For amplification of the low frequency 1.5 • Absolute Maximum Ratings Parameter Ratings UN1231 20 VCBO UN1231A 3 UN1231 Collector to emitter voltage UN1231A

UN1231

Abstract: UN1231A UNR1231 UNR1231A
Contextual Info: Transistors with built-in Resistor UNR1231 UN1231 , UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (Emitter open) (Base open) Rating Unit VCBO 20 V 60 VCEO UNR1231A (1.0) 0.45±0.05 0.55±0.1

UN1231

Abstract: UN1231A UNR1231 UNR1231A
Contextual Info: Transistors with built-in Resistor UNR1231 UN1231 , UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (1.0) 2.0±0.2 R 0.7 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO

UN1231

Abstract: UN1231A UNR1231 UNR1231A
Contextual Info: Transistors with built-in Resistor UNR1231 UN1231 , UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (1.0) R 0.9 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage UNR1231 (Emitter open)

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )

UN1219

Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
Contextual Info: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Contextual Info: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )