ULTRASONIC PHASED ARRAY BONDING Search Results

ultrasonic radar

Abstract: ultrasonic bond diagram radar circuit ultrasonic amplifier circuit diagram LMA411 ultrasonic phased array bonding
Contextual Info: 8.5-14GHz PHEMT Amplifier Filtronic LMA411 Solid State Features • • • • • • • • • • 2dB Typical Noise Figure 18dB Typical Gain 19dBm Saturated Output Power 12dB Input/Output Return Loss Typical 8.5-14GHz Frequency Bandwidth +6 Volts Single Bias Supply

Contextual Info: NEC GaAs S-BAND LOW NOISE AMPLIFIER CHIP FEATURES UPG122P GAIN vs. FREQUENCY LOW NOISE FIGURE: NF £ 2 .2 dB @ f = 2.7 to 4.2 G Hz HIGH POWER GAIN: G p = 24 dB @ f = 2.7 to 3 .4 G H z DESCRIPTION The U PG 122P GaAs amplifier has very low noise character­

ultrasonic radar

Abstract: LMA219B MIL-HDBK-263 ultrasonic phased array
Contextual Info: LMA219B LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 7 GHz to 11 GHz Frequency Band 1.4 dB Noise Figure 19 dB Gain 14 dBm Output Power at Saturation +3 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA219B is a low noise PHEMT amplifier which operates from 7 to

LMA246

Abstract: ultrasonic radar pHEMT transistor 360 MIL-HDBK-263 Filtronic LMA246
Contextual Info: LMA246 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 9 GHz to 14 GHz Frequency Band 2.2 dB Noise Figure 25.5 dB Gain 19 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA246 is a high gain low noise PHEMT amplifier that operates from 9 to

ultrasonic radar

Abstract: LMA411 MIL-HDBK-263 ultrasonic phased array low noise amplifier MMIC
Contextual Info: LMA411 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 8.5 GHz to 14 GHz Frequency Band 2 dB Noise Figure 18 dB Gain 19 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that

LMA246

Abstract: Filtronic LMA246
Contextual Info: LMA246 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 9 GHz to 14 GHz Frequency Band 2.6 dB Noise Figure 25.5 dB Gain 16 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA246 is a high gain low noise PHEMT amplifier that operates from 9 to

p-hemt

Contextual Info: LMA411 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 8.5 GHz to 14 GHz Frequency Band 2 dB Noise Figure 18 dB Gain 17 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that

Contextual Info: W hpl H EW LETT mUHM P A C K A R D Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND 4028 HPND 4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec • Low R esistance at Low Bias

ultrasonic phased array

Abstract: s-parameter s11 s12 s21 ablestik 958 s-parameter file of HPND-4028 HPND-4038 hpnd pin 0.01 pF 4028 BE HPND4028 HPND-4028 HPND4038
Contextual Info: HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches Data Sheet Description Features The HPND-4028 and 4038 beam lead PIN diodes are ­designed for low capacitance, low resistance, and fast switch­ing at microwave frequencies. These characteristics are achieved at low bias levels for minimal power

HPND-4028 pin diode

Abstract: hpnd pin 0.01 pF
Contextual Info: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)

HPND-4028 pin diode

Contextual Info: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)

HPND-4028 pin diode

Abstract: hpnd pin 0.01 pF HPND-4028 ultrasonic phased array HPND4028 HPND4038 HPND-4038 4028 BE
Contextual Info: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)

Contextual Info: GaAs MMIC Power Amplifier 2.0 - 6.5 GHz MAAM26100 V3 Features • • • • • Die Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output Description M/A-COM’s MAAM26100 is a GaAs MMIC two

MA4BPS101

Abstract: MA4BPS301 PIN diode MACOM SPICE model MA4BPS201 Three bond 09CP
Contextual Info: PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips with Offset Bond Pads Features • • • • • Chip Layout Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires

HPND-4028 pin diode

Contextual Info: What mLliM HEWLETT* PACKARD Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0nsec • Low Resistance at Low Bias

MAAM26100

Contextual Info: GaAs MMIC Power Amplifier 2.0 - 6.5 GHz MAAM26100 V4 Features • • • • • • Die Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output RoHS* Compliant Description M/A-COM’s MAAM26100 is a GaAs MMIC two

Ic D 1708 ag

Contextual Info: warn HEWLETT %SKM PA CK A R D Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 Features • Low C apacitance 0.025 pF Maximum a t 1 MHz G uaranteed Min./Max. • F ast Sw itching 2.0 nsec • Low R esistan ce a t Low B ias

ablebond 84-1

Abstract: amplifier 5.1 surrounding system circuit diagram zo 107 Ablebond Ablebond 36-2 AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 DS21 80X80
Contextual Info: AMMC - 5618 6 - 20 GHz Amplifier Data Sheet Description Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an efficient two-stage amplifier designed to be used as a cascadable intermediate gain block for EW applications. In communication systems, it can be used as a LO buffer,

Contextual Info: Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance:± 10µm (± 0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Agilent’s AMMC- 5618 6−20 GHz

Contextual Info: Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance:± 10µm (± 0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Agilent’s AMMC- 5618 6−20 GHz

AMMC-5618

Abstract: AMMC-5618-W10 AMMC-5618-W50
Contextual Info: Agilent AMMC-5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance:± 10µm (± 0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Agilent’s AMMC- 5618 6−20 GHz

MAAM26100

Contextual Info: MAAM26100 GaAs MMIC Power Amplifier 2.0 - 6.5 GHz Rev. V7 Die Features •      Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% On-Chip Bias Network DC Decoupled RF Input and Output RoHS* Compliant Description

Contextual Info: AMMC - 5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 µm 36.2 x 36.2 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) Description Features Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an

AMMC-5618-W10

Abstract: AMMC-5618-W50 DS21 AMMC-5618
Contextual Info: AMMC - 5618 6 - 20 GHz Amplifier Data Sheet Description Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an efficient two-stage amplifier designed to be used as a cascadable intermediate gain block for EW applications. In communication systems, it can be used as a LO buffer,