09CP Search Results

Contextual Info: Ordering number : EN1921A SB005-09CP N 0. I 9 2 I A Schottky Barrier Diode 90V, 50mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • Low forward voltage (Vp = 0.7V max) • Fast reverse recovery time (trr = 10ns max)

4392

Abstract: AN609 SUM70N03-09CP
Contextual Info: SUM70N03-09CP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUM70N03-09CP

Abstract: SUM70N03-09CP-E3
Contextual Info: SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 20 V 70 0.014 @ VGS = 4.5 V 58 D D D D TrenchFETr Power MOSFET Optimized for High- or Low-Side New Low Thermal Resistance Package

SUM70N03-09CP

Contextual Info: SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 20 V 70 0.014 @ VGS = 4.5 V 58 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D New Low Thermal Resistance Package

SUM70N03-09CP

Contextual Info: SPICE Device Model SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 20 V 70 0.014 @ VGS = 4.5 V 58 D D D D TrenchFETr Power MOSFET Optimized for High- or Low-Side New Low Thermal Resistance Package

SUM70N03-09CP

Contextual Info: SPICE Device Model SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUM70N03-09CP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 70 0.014 @ VGS = 4.5 V 58 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D New Low Thermal Resistance Package

s8005

Abstract: 1SS351 B10018 SB30-09 SB3009 SB30-03P S80050 SB40-05J
Contextual Info: Schottky Barrier Diodes Breakdown voltage V lo (mA) 15 50 30 Breakdown voltage (V) 90 150 lo (mA) 180 15 SB002-15CP SB002-15SPA 0.02 S8005-09CP S3005-09SPA 0.05 3.0 SB007-03Q SB007-03CP SB007-03SPA SB007T03C SB007T03Q SB007W03Q S8007W03C SB007W03S FC803 (CP6)

SUM70N03-09CP

Abstract: SUM70N03-09CP-E3
Contextual Info: SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 20 V 70 0.014 @ VGS = 4.5 V 58 D D D D TrenchFETr Power MOSFET Optimized for High- or Low-Side New Low Thermal Resistance Package

1148A

Abstract: SB02-09CP
Contextual Info: Ordering number :EN1922B SB02-09CP Shottky Barrier Diode 90V, 200mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SB02-09CP] Features · Low forward voltage (VF max=0.7V).

SB005-09CP

Contextual Info: Ordering number :EN1921A SB005-09CP Shottky Barrier Diode 90V, 50mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters and choppers . unit:mm 1148 [SB005-09CP] Features · Low forward voltage (VF max=0.7V).

SUM70N03-09CP

Contextual Info: SPICE Device Model SUM70N03-09CP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUM70N03-09CP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 20 V 70 0.014 @ VGS = 4.5 V 58 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D New Low Thermal Resistance Package

Contextual Info: SUM70N03-09CP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 20 V 70 0.014 @ VGS = 4.5 V 58 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D New Low Thermal Resistance Package

SD-5597-007

Abstract: ON01 5597-NCPB7F en-02ja mxj fpc 5597-NCPB
Contextual Info: 10 A M>4 ì* > i— i i iu i iu i lu i- n jr 49.5 48.25 47 45.75 44.5 43.25 42 40.75 39.5 38.25 37 35.75 34.5 33.25 32 30.75 29.5 28.25 27 25.75 24.5 23.25 22 20.75 I9.5 18.25 I7 15.75 I4.5 13.25 I2 10.75 9.5 MODEL NO. 5597-NCPB7F B i GENERAL TOLERANCES UNLESS SPECIFIED

EN 13034

Abstract: 5597-NCPB
Contextual Info: 2 |_ V J L ^ '- x - J L B , 7teSfflX-f#iSt7X C*'T' LD S s SOLDER T A IL S MAY BE CHECKEDBY IN 5ER SI0N F OR R E C O M M E N D E D P C B B O A R D H O LE S . !o - 00 TAIL OF ODD CKTS.MXJ MARK AS BASIC. m x JiiMa2picisssgrogi^i WsvjL5'-^-JL„ CKTS.MXJ

RXKM

Contextual Info: 10 1.05 M 3 +0 .0 5 0 0=85 0 •MLWiD'X'^ i 1f e s (NON-ACCUMULATIVE) P.O .TAIL HOLES O F F -C E N T E R D IM E N SIO N ~ ?sT V Z f S T E P FOR C K T . NO. I PITCH fx - 4 - f RECOMMENDED P.C.BOARD HOLE DIM. i7 0 h P.C.BOARD P O SIT IO N IN G WHEN MATED TRA D E MARK

LT3973-3.3

Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
Contextual Info: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7

tt 3043

Abstract: IC TT 3043 IC 4804 Molex 5058 IJC200I TT 3033 M 5229 IC ic 3586 0.5 Receptacle
Contextual Info: tr-v? (P IT C H ) (1.01) DWG. NO. SD-5229"NCPB 9 RECO M M EN DED PC BO ARD HOLE D IM E N S IO N 9& I0 ,1 8 & I9 71.12 71.42 6 6 .0 4 73.44 8 & 9 .I8 & I9 8&9,17& 18 8& 9,16& I7 68 .5 8 6 6 .0 4 68.88 70.9 6 8 .3 6 - 3263 66 .3 4 63.5 6 0 .9 6 63.5 6 0 .9 6

mxj connector

Abstract: mxj fpc
Contextual Info: NOTES A ODD C I R C U I T TO P A o> in in >£ '1 EVEN C IR C U IT I M I I M I I M I LIN E HOUSING 4 8 .2 5 47 4 5 .7 5 44 .5 4 3 .2 5 42 4 0 .7 5 39 .5 3 8 .2 5 37 3 5 .7 5 34 .5 3 3 .2 5 32 3 0 .7 5 29 .5 2 8 .2 5 27 2 5 .7 5 24 .5 2 3 .2 5 1 . œ o prl \

Contextual Info: BOSS THRU BIOS SEMICONDUCTOR TECHNICAL DATA POKWAED INTERNATIONAL ELECTRONICS LTD. TECHNICAL SPECIFICATIO NS O F SIN G LE-PH ASE MINI SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Voits CURRENT - 0,5 Ampere FEATURES * * * ” Surge overload raling • 30 Amperes peak

Contextual Info: 10 43.25 42 40.75 39.5 38.25 37 35.75 34.5 33.25 32 30.75 28.25 27 25.75 24.5 23.25 22 20.75 I9.5 I8.25 I7 I5.75 I4.5 I3.25 I2 I0.75 9.5 B 38.95 5598-30CPB7F 30 37.7 29 -29CPB7F 36.45 -28CPB7F 28 35.2 27 -27CPB7F 33.95 -26CPB7F 26 32.7 25 -25CPB7F 3 1.45 -24CPB7F

5597-NCPB7F

Abstract: molex mx
Contextual Info: 49.5 LO C\ J CD ro —j 47 45.75 4 4 .5 43.25 42 40.75 3 9 .5 38.25 37 35.75 3 4 .5 33.25 32 30.75 2 9 .5 28.25 25.75 2 4 .5 23.25 22 20.75 9.5 8.2 5 7 5.7 5 4.5 3.2 5 2 0.75 9.5 M O D E L NO. 5597-NCPB7F /jQ OVER g ï o ? LU 00 ^ 30 UNDER ^Q O VER UJ ^4 ^