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UGF09180 Datasheets (1)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UGF09180		Cree	LDMOS FETs in Class AB Operation Cellular to 1 GHz	Original	PDF	357.35KB	7

UGF09180 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF9180 Abstract: UGF09180F Cree Microwave UGF09180 Contextual Info: UGF09180 180W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 180W, it is ideal for CDMA, TDMA, GSM,	Original	ugf09180 869-894mhz mrf9180 28vdc +3869mhz ugf09180f cree microwave	PDF
Contextual Info: UGF09180 180W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 180W, it is ideal for CDMA, TDMA, GSM,	Original	ugf09180 869-894mhz mrf9180 28vdc +1869mhz	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF

Catalog Datasheet

Type

Document Tags

PDF

MRF9180

Abstract: UGF09180F Cree Microwave UGF09180
Contextual Info: UGF09180 180W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 180W, it is ideal for CDMA, TDMA, GSM,

Original

ugf09180 869-894mhz mrf9180 28vdc +3

PDF

Contextual Info: UGF09180 180W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 180W, it is ideal for CDMA, TDMA, GSM,

Original

ugf09180 869-894mhz mrf9180 28vdc +1

PDF

semiconductors cross reference

Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30

Original

blf1043 upf1010 blf3g21-30 upf1030 +14

PDF