UES140 Search Results

UHVP806

Abstract: PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10
Contextual Info: Micmsemj Ultra Fast Rectifiers UFR Part Number UES1404 UHVP802 UF830 RSF0840 UHVP804 UF840 UF850 RSF0860 UHVP806 UF860 UF870 UF880 1N5812 1N5813 1N6657 1N6657R 1N5815 1N66S8 1N6658R 1N6659 1N6659R 1N6079 1N6080 UFT121Q 1N6081 UFT1215 UFT1220 UFT1230 UFT1240

BYW29

Abstract: UES1402 UES1403 BYW29-100 BYW29-150 BYW29-50 UES1401
Contextual Info: RECTIFIERS BYW29-50 BYW29-100 BYW29-150 High Efficiency, 7 A and 8A UES1401 UES1402 UES1403 FEA TU R ES D ESCRIPTIO N • • • • • The B Y W 2 9 /U E S 1 4 0 0 Series, in a plastic package sim ilar to the T0 -22 0, is sp ecifically designed for operation in power switching

BYW80

Abstract: BYW80-150 BYW80-50 BYW80-100 UES1401 UES1402 UES1403 ES1401
Contextual Info: BYW80-50 BYW80-100 BYW80-150 RECTIFIERS High Efficiency, 7A and 8A U ES 1401 U ES 1402 UES1403 DESCRIPTION T h e B Y W 8 0 /U E S 1 4 0 0 Series, in a pla stic package s im ila r to th e TO-220, is s p e cific a lly desig n ed for operation in pow er sw itching

BYW29

Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
Contextual Info: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.

UES1503

Abstract: UES2403 UES1401 UES1402 UES1403 UES1404 UES1501 UES1502 UES1504 UES2402
Contextual Info: je m it r o n ic r “ sem ic o n d u c to r s Semitronics Corp. RECTIFIERS High Efficiency, 8A t o - 22o a c ELECTRICAL SPECIFICATIONS Type UES1401 UES1402 UES1403 UES1404 ' Measured in circuit lF = 0.5A, lR = 1.OA, I REC = 0.25A Maximum Forward Voltage @

DYW29-150

Abstract: es140 byw80 BYW29 diode rectifier BYW29-100 BYW29-150 byw29100 BYW80-50 BYW29-50 UES1404
Contextual Info: UES1401 UES1402 UES1403 UES1404 RECTIFIERS High Efficiency, 7A and 8A FEATURES • Very Low Forward Voltage • Very Fast Recovery Tim es • Econom ical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150

UES1404

Abstract: UES1401 UES1402 UES1403
Contextual Info: 8 Amp Ultra Fast Rectifiers UES140 UES1404 - c Dim. Inches M illim eter Minimum —B A B C D E F G H J K L M N P Base Cathode Î .390 .045 .180 .245 .550 .139 .100 Maximum Minimum .415 .055 .190 .260 .650 .155 .120 .250 .580 .210 .025 .115 .038 .055 -

UES1404

Abstract: UES1401 UES1402 UES1403
Contextual Info: UES1401 - UES1404 8 Amp Ultra Fast Rectifiers — C Dim. Inches Millimeter Minimum — B A B C D E F G H J K L M N P Base Cathode ? •it-M .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 Maximum Minimum .415 .0 5 5

BYW29-150 diode

Abstract: BVW29-50 BYW29 BYW29-150 BYW29-200 BYW29-100 byw80 bvw29 BYW80-100 BYW80-150
Contextual Info: RECTIFIERS UES1401 UES1402 UES1403 UES1404 High Efficiency, 7 A and 8A FEATURES • Very Low Forward Vottage • Very Fast Recovery Times • Economical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150

1N5811

Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization

TL 2272 R

Abstract: to220 5 lead plastic UFN610 m7 rectifier diode
Contextual Info: UNITRODE T2 CORP 9347963 U N I T R O O E CORP mT| 92D 0010720 10720 1 D - ?*?-< POWER MOSFET TRANSISTORS Hffilîi 200 Volt, 1.5 Ohm N-Channel UFN 612 UFN613 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

UFN742

Abstract: N-Channel mosfet 400v to220 2314Y UFN741
Contextual Info: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

UFN633

Abstract: UFN630 CIT-20
Contextual Info: U N ITR O PE T S CORP 9347963 D EE UN I T R O D E CORP |^ B 4 7 ^ b 3 T o iQ 7 3 ? T T 92D Q 10732 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FE A T U R E S • Com pact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

Contextual Info: - •_ yK UNITRODE CORP — TE 9347963 U N ITR O D E CO RP DE~ ^347^^3 GD10ÛT3 0 92D 10893 D P O W E R M O S F E T T R A N S IS T O R S 50 Volt, 0.05 Ohm N-Channel ^ nzso T- T f l - l l FEATURES D E S C R IP T IO N • • • • • • These low voltage power MOSFETS have been designed for optimum performance in low

1N5811

Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

1G747

Contextual Info: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

UC3861-64

Abstract: 104 csk capacitor Steigerwald A Comparison of Half Bridge Resonant SEM-600A zvs in buck converter design and implementation resonant converter theory 102 csk capacitor a comparison of half bridge resonant converter ZERO VOLTAGE SWITCH UC3861 with zvs
Contextual Info: y _ U M IT R O D E U-138 APPLICATION NOTE Zero Voltage Switching Resonant Power Conversion Bill Andreycak Abstract The technique of zero voltage switching in modem power conversion is explored. Several ZVS topologies and applications, limitations of the ZVS technique, and a generalized design

1N5807

Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

USD935-50

Contextual Info: UNITRODE CORP | 9347963 UN I TR OD E □□IGTflb b | 92D CORP 10986 RECTIFIERS D ^ES5501 SES5502 SES5503 SES5504 High Efficiency, 16A F EATU RES • Very Low Forward Voltage • Very Fast Recovery T im es • Econom ical, C onvenient T 0 -2 2 0 Package • Low T herm al Resistance