2n5105
Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105
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2n38192n38212n38222n3823+92n42232n42242n44162n4416a2n50782n51052n52452n54852n5670 pin
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2N3819 equivalent
Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30
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2n38192n38212n38222n3823+142n42232n42242n44162n4416a2n50782n51032n3819 equivalentuc7342n56682n3822 equivalent2n51052n5485u1994edsasw0036854
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2NB906
Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style
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uc4250uc4250cmil-std-883c2n2609+162n38212n38222n38232n48562n48572n48s82nb906in53132nb90in5286in5296solitrondevicesin5302in5287in53062n5902 to-92
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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j-23548k24123i39-40inz3766+1153-c-03siliconix fettransistor e112 fet n-channeljfet transistor replacement guide j201e112 jfetjfet bfw10 terminalsjfet bfw10 specifications4856a mosfettransistor e112 fetfets in balanced mixers ed oxnerequivalent components fet bfw10
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e304 fet
Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092
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bf256bbf256lb2sk121esm4092+14mfe2005mpf4416uc21492n4978pn4304e304 fet2sk581siliconix e304mpf4860tp5950interfetbf256spn4222u199
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2N5670 pin
Abstract: 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N5078
Contextual Info: LOW P O W E R FIELD EFFEC T T R A N S IS T O R S KIF ÄDIPILD^DUKi !, Type Number BVDgo or Case BVgss Style Min TO-) Geometry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) ^HTT lgss Max (nA) Yls Min @ Freq (uMhos) (MhZ) Idss Min Max (mA) Pwr Gain @
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2n38192n38212n38222n3823+102n42232n4224u1994euc588uc734uc734e2n5670 pin2n44162n4416a2n5078
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kk3819
Abstract: kk4223
Contextual Info: T -3 5 -2 5 ' sod Ô3bflbü2 DÜDBbflD S4T 4ÖE D SOLITRON DEVICES INC A T M , © L O W P O W E R FIELD E F F E C T T R A N S I S T O R S m m /M L •BVDgo o: BVgss Case Min Type Style Numbei T O - I Geometi ? (V 18 FN22.2 50 2N3066 2N3067 18 FN22.2
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2n30662n30672n30682n3069+82n30702n30712n30852n30872n30892n3089akk3819kk4223
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ATML U 106
Abstract: ATML 350 UC758 2N5902 TO-92 2N5045 J2N5670 2N3966 ATML U ATML U 010 2N3070
Contextual Info: flnlitran_ [F>[a iB y)©'ir ©Mm.©© Devices. Inc. L O W P O W E R FIE L D E F F E C T T R A N S I S T O R S (ÜHNIIIIMIL Type Num ber •BVDgo or BVgss C ase Min Style ( T O - ) G eom etry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min
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2n30662n30672n30682n3069+152n30702n30712n30852n30872n30892n3089aatml u 106atml 350uc7582n5902 to-922n5045j2n56702n3966atml uatml u 010
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2n5078
Contextual Info: [p^@[D y] ir ©ä ifa il LOW P O W E R FIELD E FFE C T T R A N S IS T O R S IMF ÄH[py^Qi[^©0 M=©[KlÄIMKli[L [MITT Typ« Number BVDgo or Case BVgss Style Min (TO-) Geometry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) — — — Idss Min Max
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2n38192n38212n38222n3823+62n42232n42242n44162n4416a2n50782n5103
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