UPD444004 Search Results
UPD444004 Datasheets (13)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| UPD444004 | NEC | 4M-BIT CMOS FAST SRAM 1M-Word BY 4-BIT | Original | 123.24KB | 16 | ||
| UPD444004L | NEC | 4M-BIT CMOS FAST SRAM 1M-Word BY 4-BIT | Original | 106.45KB | 16 | ||
| UPD444004LE-10 | NEC | 4M-bit(1M-word x 4-bit) Fast SRAM | Original | 123.24KB | 16 | ||
| uPD444004LE-10 | NEC | 4 MBit CMOS Fast SRAM 1 MWord By 4 Bit | Original | 123.23KB | 16 | ||
| UPD444004LE-12 | NEC | 4M-bit(1M-word x 4-bit) Fast SRAM | Original | 123.22KB | 16 | ||
| uPD444004LE-12 | NEC | 4 MBit CMOS Fast SRAM 1 MWord By 4 Bit | Original | 123.23KB | 16 | ||
| UPD444004LE-8 | NEC | 4M-bit(1M-word x 4-bit) Fast SRAM | Original | 123.23KB | 16 | ||
| uPD444004LE-8 | NEC | 4 MBit CMOS Fast SRAM 1 MWord By 4 Bit | Original | 123.23KB | 16 | ||
| uPD444004LLE-A10 | NEC | 4 MBit CMOS Fast SRAM 1 MWord By 4 Bit | Original | 106.44KB | 16 | ||
| UPD444004LLE-A10 | NEC | 4M-bit(1M-word x 4-bit) Fast SRAM | Original | 106.45KB | 16 | ||
| UPD444004LLE-A12 | NEC | 4M-bit(1M-word x 4-bit) Fast SRAM | Original | 106.45KB | 16 | ||
| uPD444004LLE-A8 | NEC | 4 MBit CMOS Fast SRAM 1 MWord By 4 Bit | Original | 106.44KB | 16 | ||
| UPD444004LLE-A8 | NEC | 4M-bit(1M-word x 4-bit) Fast SRAM | Original | 106.45KB | 16 |
UPD444004 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
0829AContextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT UPD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ,uPD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,uPD444004 is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II). |
OCR Scan |
jupd444004upd44400432-pinpd444004le-10+2 | |
32-PINContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The μPD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444004 is packaged in a 32-pin PLASTIC SOJ. |
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pd44400432-pinpd444004le-8pd444004le-10+2 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The μPD444004L is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444004L is packaged in a 32-pin PLASTIC SOJ. |
Original |
pd444004l32-pinpd444004lle-a8pd444004lle-a10+2 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444004 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The μPD444004 is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444004 is packaged in a 32-pin PLASTIC SOJ. |
Original |
pd44400432-pinpd444004le-8pd444004le-10+2 | |
2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11 | |
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
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2sk25002sk1543upd16861gsnec 2sk2500+6 | |
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Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD444004L 4M ビット CMOS 高速スタティック RAM 1M ワードx4 ビット μPD444004L は 4,194,304 ビット(1,048,576 ワード×4 ビット)の CMOS 高速スタティック RAM です。 |
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pd444004lpd444004lle-a8pd444004lle-a10mm400+5 | |
AM 5888
Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
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m16000ejev0sg00am 5888samsung mcp reliabilitysamsung mcp+7 | |
32-PINContextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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32-pin | |
transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
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Original |
mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+8 | |
A1231Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD444004 4M ビット CMOS 高速スタティック RAM 1M ワードx4 ビット μPD444004 は 4,194,304 ビット(1,048,576 ワード×4 ビット)の CMOS 高速スタティック RAM です。 |
Original |
pd444004pd444004le-8pd444004le-10mm400+6 | |
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Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444004L 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The μPD444004L is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444004L is packaged in a 32-pin PLASTIC SOJ. |
Original |
pd444004l32-pinpd444004lle-a8pd444004lle-a10+1 | |
UPD44164185F5-E60-EQ1
Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
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Original |
upd4382321gf-a85gs880f32bt-7upd4382321gf-a90upd4382322gf-a67+15 | |
mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
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ir260/ws260/hs350ir260/hs350mc10087f1mc-10041+8 | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
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Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
Original |
pd444004lpd444004lle-a8pd444004lle-a10mm400+3 | |
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Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社 |
Original |
pd444004pd444004le-8pd444004le-10mm400+2 | |