U8 MARKING Search Results
U8 MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA |
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2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA |
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54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA |
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9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R |
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54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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U8 MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER |
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OT-23 BSR13 BSR14 C-120 | |
sot23 marking u8
Abstract: VBSR13 sot-23 marking U7 BSR13R BSR14 equivalent BSR13 BSR14
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OT-23 BSR13 BSR14 C-120 sot23 marking u8 VBSR13 sot-23 marking U7 BSR13R BSR14 equivalent BSR13 BSR14 | |
BSR13
Abstract: BSR14 BSR13R BSR14R RFT-300
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OCR Scan |
BSR13 BSR14 BSR13; 500mA; BSR14; BSR13 BSR14 BSR13R BSR14R RFT-300 | |
SIDAC
Abstract: AX06 g1va12c
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OCR Scan |
25CBintess Z314-5 SIDAC AX06 g1va12c | |
g1vB23cContextual Info: S ID A C -G1V®23C T /= 25°C / Unless otherwise specified Absolute Maximum Ratings m Item SB-t a fSfffiK S to ra g e Tem perature O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage Mi j i t ><!# ^ yWiffii y U8£_h#^ C ritica l Rate o f Rise o f O n -sta te C urrent |
OCR Scan |
AX078 Z314-5 g1vB23c | |
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Contextual Info: UG564T7488LC Data sheets can be downloaded at www.unigen.com 512M Bytes 64M x 72 bits SYNCHRONOUS DRAM MODULE PC133-COMPATIBLE SDRAM Unbuffered DIMM based on 9 pcs 64M x 8 SDRAM with LVTTL, 4 banks & 8K Refresh FEATURES • • • • • • • • Voltage Relative to GND |
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UG564T7488LC PC133-COMPATIBLE UG564T7488LC-PH UG564T7488LC-PL 118DIA | |
W3DG7217V-D2Contextual Info: White Electronic Designs W3DG7217V-D2 PRELIMINARY* 128MB - 16Mx72 SDRAM UNBUFFERED FEATURES DESCRIPTION Burst Mode Operation The W3DG7217V is a 16Mx72 synchronous DRAM module which consists of nine 16Meg x 8 SDRAM components in TSOP-II package, and one 2K EEPROM in an 8-pin |
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W3DG7217V-D2 128MB 16Mx72 W3DG7217V 16Meg W3DG7217V-D2 | |
marking code P87
Abstract: marking code u8 U8 marking
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DS1705/DS1706 MAX705/MAX706 DS1706REUA DS1706REUA/T DS1706SEUA DS1706TEUA DS1706TEUA/T DS1706SEUA/T DS1706EUA DS1706LEUA marking code P87 marking code u8 U8 marking | |
P25 PNP
Abstract: SO4401 2369 BCV27 BCV47
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OCR Scan |
BCV27 BCV47 P25 PNP SO4401 2369 | |
z80b
Abstract: JTF16C
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240-Pin MT16JTF25664AZ MT16JTF51264AZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 t3707-0006, 09005aef837cdd2d/Source: z80b JTF16C | |
h13EContextual Info: ADVANCE‡ 32MB SYNCFLASH/ 32MB, 64MB, 128MB SDRAM SODIMM SMALL-OUTLINE SYNCFLASH MODULE MT8LSFT3232 R H, MT8LSFT3264(R)H, MT8LSFT32128(R)H For the latest data sheet, please refer to the Micron Website: www.micron.com/syncflash FEATURES 144-Pin Small-Outline DIMM |
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128MB PC100 PC133 144-pin, 144-pin MT8LSFT3232 SyncFlash/32MB, MT8LSFT32 h13E | |
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Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking |
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OT-23 BSR13 BSR14 C-120 | |
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Contextual Info: 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT9GTF12872FY – 1GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM) |
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240-Pin MT9GTF12872FY 240-pin, 100ms MO-256 DDR2-667) MT9GTF12872F 09005aef82b6457a/Source: | |
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Contextual Info: 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features 1.55V DDR2 SDRAM FBDIMM MT9RTF12872FY – 1GB Features • • • • • • • • Information in the 1.8V DDR2 FBDIMM data sheet is directly applicable to this 1.55V DDR2 FBDIMM, except where stated otherwise in this data sheet. |
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240-Pin MT9RTF12872FY 240-pin, MO-256 09005aef82b645b8 rtf9c128x72fy | |
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SN11Contextual Info: Preliminary‡ 1GB x72, SR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT9GTF12872F – 1GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.40V ≤ VDD = VDDQ ≤ 1.70V for DDR2 SDRAM |
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240-Pin MT9GTF12872F 100ms MO-256 MT9GTF12872F, 09005aef82b6457a/Source: 09005aef82b64596 GTF9C128x72F SN11 | |
SWA marking
Abstract: PTH8 ADS800 EL2260 EL4390 TMC1185 TMC2067P7C TMC2068P7C TMC22071A TMC22153
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TMC2067P7C TMC1185 10-Bit TMC2067P7C TMC22153 TMC1185, TMC2242, SWA marking PTH8 ADS800 EL2260 EL4390 TMC2068P7C TMC22071A | |
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Contextual Info: UG564T6688KJ Data sheets can be downloaded at www.unigen.com 512M Bytes 64M x 64 bits SYNCHRONOUS DRAM MODULE PC133-COMPATIBLE SDRAM Unbuffered DIMM based on 16 pcs 32M x 8 SDRAM with LVTTL, 4 banks & 8K Refresh FEATURES • • • • • • • Voltage Relative to GND |
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UG564T6688KJ PC133-COMPATIBLE UG564T6688KJ-PL 118DIA | |
UG532T6648JJ
Abstract: marking U12
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UG532T6648JJ PC133-COMPATIBLE 118DIA UG532T6648JJ marking U12 | |
UG532S7448JJ-PL
Abstract: UG532S7448JJ UG532S7448JJ-PH
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UG532S7448JJ PC100-COMPATIBLE UG532S7448JJ-PH UG532S7448JJ-PL 118DIA UG532S7448JJ-PL UG532S7448JJ | |
marking code u8
Abstract: zener diode color band U8 marking ZENER DIODE U8
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OD-323 22-NOV-10 KSD-D6C016-001 marking code u8 zener diode color band U8 marking ZENER DIODE U8 | |
MT9GTF12872FYContextual Info: 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT9GTF12872FY – 1GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For |
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240-Pin MT9GTF12872FY 240-pin, 100ms MO-256 09005aef82b6457a gtf9c128x72fy MT9GTF12872FY | |
432 BLContextual Info: 512MB, 1GB x64, DR 200-Pin DDR SODIMM Features DDR SDRAM SODIMM MT16VDDF6464H – 512MB MT16VDDF12864H – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 200-pin, small-outline dual in-line memory module |
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512MB, 200-Pin MT16VDDF6464H 512MB MT16VDDF12864H 200-pin, PC2100 PC2700 512MB 09005aef80a77a90/Source: 432 BL | |
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Contextual Info: 1GB x72, SR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT9GTF12872FY – 1GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For |
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240-Pin MT9GTF12872FY 240-pin, 100ms MO-256 09005aef82b6457a gtf9c128x72fy | |
k192a
Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
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OCR Scan |
1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995 | |