U-344 EPROM Search Results

32-Pad

Abstract: 20 tlw
Contextual Info: DPV27C101 128K X 8 UVPROM MONOLITHIC D ESC R IP T IO N : The D P V 27 C 101 is a high-speed 128K X 8 U V erasable, electrically programmable read only memory EPROM . It is especially well suited for applications where low-power consumption is important 32-pin dilal in-line packages (D IPs) and standard

27C101

Contextual Info: Dense-Pac Microsystems. Inc. ^ 128K X 8 UVPROM MONOLITHIC D ESC R IP TIO N : The D P V 27 C 101 is a high-speed 128K X 8 U V erasable, electrically programmable read only memory EPROM . It is especially well suited for applications where low-power consumption is important

epf8282 hardware

Contextual Info: Configuration EPROMs ÆQn=^ for FLEX 8000 Devices - 1 Data Sheet August 1993, ver. 2 Features □ □ □ □ □ □ Functional Description Fam ily of serial EPROM s designed to configure FLEX 8000 devices

Contextual Info: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors

Contextual Info: CY7C344 CY7C344B W w CYPRESS 32-Macrocell MAX EPLD Features Functional Description • High-performance, high-density re­ placement for TTL, 74HC, and cus­ tom logic • 32 macrocells, 64 expander product terms in one LAB • 8 dedicated inputs, 16 I/O pins

Temic Semiconductors

Abstract: 80C51 80C51X2 SO24 T83C5101 T83C5102 T87C5101 TSSOP24
Contextual Info: 2000 microcontrollers facts T8xC5101/02 8 - b i t l o w - p i n - c o u n t m i c r o c o n t r o l l e r Key Features ❶ 80C51 architecture ❶ 8 Kbytes and 16 Kbytes ROM or OTP ❶ 512 bytes of RAM ❶ 24-pin package ❶ High-speed architecture with X2

Contextual Info: & 27HC256 Microchip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized into 32K words of 8 bit each. Advanced CMOS technology allows bipolar speed with

Contextual Info: H igh p erfo rm an ce 1M X 8/512K X 16 3V CMOS Flash EEPROM AS29LV800 h il. II 1 M X 8 / 5 1 2 K x 1 6 C M O S F lash EPROM Advance information Features •O rg a n iza tio n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n • Sector architecture

MEXICO LF 2A 250V 313 FUSE

Abstract: MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv
Contextual Info: Circuit Protection Specialists World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA Technical Assistance and

Contextual Info: bSMTflSñ □ □ l b 7 3 1 TäT • m m M IT S U B IS H I M ICRO CO MPUTERS MITSUBISHK m C M P T R / N I P R O M37415PFS blE ] PIGGYBACK fo r M 3 7 4 1 S M 4 -X X X F P DESCRIPTION FEATURES The M37415PFS is an EPROM mounted-type microcompu­ • D ifference with the M 37415M 4-XXXFP are:

Contextual Info: ADV MICRO M E M O R Y 4ÔE D 025752Ö GüBDS^e 1 • a T—46—13-25 Am 27X010 1 Megabit (131,072 x 8-Bit) CMOS ExpressROM Device AMD4 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming

Contextual Info: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture

OA-210

Abstract: tree Data Structure c5200 transistor C5200 CRS08 HC08 MC9RS08KA1 RS08 24-hour-clock
Contextual Info: RS08 Build Tools Reference Manual for Microcontrollers Revised: 18 October 2007 Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. CodeWarrior is a trademark or registered trademark of Freescale Semiconductor, Inc. in the United States and/or other countries. All other product or service names are the property of their respective owners.

Contextual Info: intJ. 87C196KC 16-BIT HIGH-PERFORMANCE CHMOS MICROCONTROLLER Automotive • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ —40°C to + 125°C 16 Kbytes of On-Chip EPROM 232 Byte Register File 256 Bytes of Additional RAM Reglster-to-Register Architecture

promotion 6410

Abstract: Alliance semiconductor promotion 1995 YUV planar packed format vga crtc P105 P108 TQD344T cga to vga converter 3C011 planar YUV display input
Contextual Info: ProMotion-6410 Advanced MultiMedia User Interface Accelerator Databook Alliance Semiconductor • ^00344=5 0 0 0 0 2 3 4 b3fl Copyright 1995 Alliance Semiconductor Corporation All rights reserved. Printed in U.S.A. 4/95 1K.cm Alliance Semiconductor reserves the right to make

d0117

Contextual Info: ADVANOe iHro RMAT!C N AMD il Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from

Contextual Info: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current

1600HD

Abstract: DSP16x DSP1616 1600-HDS Unix System Laboratories
Contextual Info: Product Note May 1994 -=• m i chi Microelectronics FlashDSP Development Products FlashDSP 1616 Features Description FlashDSP 1 6 1 6 Digital Signal Processor F/as/?DSP 1616 Digital Signal Processor ■ First digital signal processor with on-chip flash

Contextual Info: Features • • • • • • • • • • • Read Access Time -10 0 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Operation - 100 ¿A Maximum Standby - 50 mA Maximum Active at 5 MHz Wide Selection of JEDEC Standard Packages

tlcs 9000

Abstract: TMP97CS44 TLCS-9000 tlcs9000 TLCS-9000/16
Contextual Info: 4 . Electrical Characteristics Tentative 4.1 Absolute Maximum Ratings Symbol Vcc VlN IlN ZlOL ZlOH Pd Tsolder T stg Topr Parameter Power supply voltage Input voltage Input current (total) Output current (total) Output current (total) Power dissipation (Ta = 1lO'C)

Contextual Info: PRELIMINARY Am27LV020 Advanced Micro Devices 262,144 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± .25 V ■ High performance at 3.3 Vcc - 200 ns maximum access time

Contextual Info: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e

at29c512 20jc

Abstract: AT29C512-90
Contextual Info: AT29C512 Features • • • Fast Read Access Time - 90 ns Five-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 bytes/sector) Internal Address and Data Latches for 128 Bytes • Fast Sector Program Cycle Time -1 0 ms

Contextual Info: H ig h p e r fo r m a n c e 2 5 6 IÍX 8 SV C M O S F la s h E E P R O M A S29F002 h A 2 5 6 K X 8 CM O S Flash E E PR O M Prelim inary information Features • O rgan ization: 2 5 6 K x 8 • L o w p o w er co n su m p tio n - 4 0 mA m axim um read current