TW 8816 Search Results

AL 5052

Abstract: XMTG lg lcd monitor circuit diagram COP888CG N40A V44A 220v AC to 110v AC circuit diagram
Contextual Info: COP884CG/COP888CG Single-Chip microCMOS Microcontrollers General Description Features • ■ ■ ■ ■ ■ ■ ■ ■ Low cost 8-bit m icrocontroller Fully static CMOS, with low current drain Tw o pow er saving m odes: HALT and IDLE 1 fj.s instruction cycle tim e

AEB DP1

Abstract: 0588 82385 A12A D815
Contextual Info: Q S88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 Q S 88160 Prelim inary FE A T U R E S /B E N E FIT S • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial

Contextual Info: a H M -8816H -8 H a r r is 16K x 8 High Speed Asynchronous CMOS Static RAM Module June 1989 P in o u t Features T O P V IE W • Low Standby Supply Current . 8 0 0 nA 28] VCC n c [T A12 Qf 27] W • W ide Operating T em perature R a n g e . -5 5 ° C to + 1 2 5 °C

6216 static ram

Abstract: 6216 ram
Contextual Info: m U U HM-8816H HARRIS S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January1992 Features Description The HM-8816H is a high speed, asynchronous CMOS static RAM module, based on a multilayer, co-fired, dual-in-line ceramic substrate and eight HM-65262 16K x 1 asynchro­

6216 static ram

Abstract: T800 equivalent
Contextual Info: Œ \ H A R R HM-8816H I S S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January 1992 Features Description • Low Standby Supply C u rre n t.800|iA • Low Operating Supply C urrent. 400mA

Contextual Info: HM-QQ16H 3 HARIRIS 16K x 8 High Speed Asynchronous CMOS Static RAM Module Features Pinout • Low Standby S up ply C u rre n t. 800/jA T O P VIEW • Low O p erating S up ply C u rre n t.

Contextual Info: ffl HARRIS H M - 8 8 1 6 H 16K x 8 High Speed Asynchronous CMOS Static RAM Module Features Pinout • Low Standby Supply T O P V IE W NC C 1 • Fast Access Tim e. 70ns

Contextual Info: H M -8 8 1 6 H -8 £ H A R R I S 16 K x 8 High Speed Asynchronous June 1989 CMOS Static RAM Module P in o u t Features T O P V IE W • Low Standby Supply C urrent . 8 0 0 jjA • Low Operating Supply C u rre n t. 400m A

Contextual Info: COM’L: -12/15/20,0-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges ■

pal 007a

Abstract: MACH21D PAL 006A PAL 002a pal 005a MACH110 MACH210 MACH215 PAL22V10 PAL22V16
Contextual Info: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 IND: -12/14/18/24 M ACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 a Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Peripheral Component Interconnect PCI compliant

HM-65262

Abstract: HM-8816H HM-8816H-8 HM-8816H-9
Contextual Info: 3 H A R R I S H M - 8 8 1 6 H 16K x 8 High Speed Asynchronous CMOS Static RAM Module Features Pinout • Low Standby Sup ply C u rre n T O P VIEW • Low O p erating S up ply C u r re n A

MACH Technical Briefs Manual

Abstract: amd 44 MACH210
Contextual Info: MACH 81 and 2 Family Data Book High-Density EE CMOS Programmable Logic 1994 FUTURE ELECTRONICS INC 5935 Airport Road, Suite 200 Mississauga, Ontario L4V1W5 TEL.: 416 612-9200 FAX: (416) 612-9185 TOLL FREE 1-800-268-7948 Advanced Micro Devices MACH 1 and 2 Fam ily D ata Book

mach435

Contextual Info: FIN A L COM’L: -12/15/20, Q-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Flexible clocking ■ 84 Pins in PLCC ■ 128 Macrocells ■ — Four global clock pins with selectable edges

EDH8816C-12

Abstract: EDH8816C-15 EDH8816C-20
Contextual Info: Electronic Designs Ir EDH8816C-12/ 15/20 MILITARY 16K x 8 SRAM CMOS The EDH8816C <16K x 8 uses the advanced Electronic Designs Inc. M EM O R Y-PAC K packaging concept w hich m o un ts several LC C m em ory devices on a single m ultilayer ceram ic substrate. The EDH8816C is part o f the EBM -pack

EDH8816C-12

Abstract: EDH8816C-15 EDH8816C-20
Contextual Info: Electronic Designs Inc. EDH8816C-12/15/20 16K x 8 SRAM CMOS Th e EDH8816C 16K x 8 uses the advanced Electronic Designs Inc. M EM ORY-PACK packaging concept which mounts several LC C memory devices on a single multilayer ceramic substrate. The ED H8816C is part of the EBM-pack

Contextual Info: QS88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 FEATURES/BENEFITS • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/Word read/write 20ns/25 ns/30ns/35 ns Taa Available in 52-pin PLCC

MACH210

Contextual Info: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 a IND: -12/14/18/24 MACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ Peripheral Component Interconnect PCI

Contextual Info: F IN A L COM’L :-10/15/20 IND:-18/24 a Advanced Micro Devices M A C H 2 3 0 - 1 0 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 128 Macrocells ■ 128 Flip-flops; 4 clock choices ■ 10 ns tpD Commercial

COP888GW

Abstract: SD112 V68A
Contextual Info: COP888GW PRELIMINARY § ^ N a t i o n a l S e m i c o n d u c t o r COP888GW 8-Bit Microcontroller with Pulse Train Generators and Capture Modules General Description Additional Peripheral Features T h e C OP888 fam ily of m icrocontrollers uses an 8 -bit single

PAL26V16

Abstract: teradyne lasar
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial

mach 3 family amd

Abstract: circuit diagram of QS 8005 PAL26V16 D750 MACH110 MACH210 MACH215 PAL22V10 mach 1 family amd NS4N
Contextual Info: FINAL COM’L: -7.5/10/12/15/20 IND: -10/12/14/18/24 M A C H 2 1 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic Z I Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells ■ Programmable power-down mode ■ 32 Outputs

Contextual Info: Electronic Designs Ir EDH8816C-12/15/20 MILITARY 16K x 8 SRAM CMOS r-7 The EDH8816C <16K x 8 uses the advanced Electronic D esigns Inc. M E M O R Y-PAC K packaging concept w hich m o un ts several LC C m em ory devices on a single m ultilayer ceram ic substrate. The EDH8816C is part o f the EBM -pack

TB 1226 EN

Abstract: fxs 100 10 COP888KG N40A V44A
Contextual Info: Semiconductor PRELIMINARY COP688KG/COP888KG 8-Bit Microcontroller with UART and Three Multi-Function Timers General Description • S ch m itt trig ge r inputs o n ports G and L ■ Packages: — 40 DIP w ith 35 I/O pins — 44 PLCC w ith 39 I/O pins T h e COP8TM feature fam ily o f m icroco n tro lle rs uses an 8-bit

C0P888

Abstract: 44-PIN COP888EB V44A lcd panel si 70004
Contextual Info: Semiconductor PRELIMINARY June 1997 COP87L88RB/COP87L89RB 8-Bit One Time Programmable OTP Microcontroller with CAN Interface, A/D, UART and 32Kbytes of Program Memory General Description The C O P 87L88R B /C O P 87L89R B are m em bers of the COP8 m icrocontroller feature family, w hich uses an 8-bit