TT 2240 Search Results

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 180 F 28,5 35 5 6 115 80 9 18 AK M8 92 18 K A K1 G1 K2 G2 VWK Okt. 1996 TT 180 F, TD 180 F, DT Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values

ws dvd 290

Abstract: EUPEC DD 104 N 16 F17 DIODE T670 ws dvd 290 power supply
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 180 F 28,5 35 5 6 115 80 9 18 AK M8 92 18 K A K1 G1 K2 G2 VWK Okt. 1996 TT 180 F, TD 180 F, DT Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values

ws dvd 290

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 180 F 28,5 35 5 6 115 80 9 18 AK M8 92 18 K A K1 G1 K2 G2 VWK Okt. 1996 TT 180 F, TD 180 F, DT Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values

ws dvd 290

Abstract: ws dvd 290 power supply F17 DIODE
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 180 F 28,5 35 5 6 115 80 9 18 AK M8 92 18 K A K1 G1 K2 G2 VWK Okt. 1996 TT 180 F, TD 180 F, DT Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values

EIA-530A

Abstract: RS-449 SP505 SP505A SP505B sp5051
Contextual Info: SP505 61 SD a 62 VCC 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 73 VCC 74 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 80 CTS • +5V Only Operation • Seven (7) Drivers and Seven (7) Receivers • Driver and Receiver Tri-state Control

VAG com

Abstract: ss297 transistor ADI C Bandpass Filters IR transmission CD22414 MCI403
Contextual Info: -t ~T CD22413, CD22414 Types Preliminary Data CMOS Pulse Code Modulation Sampled — Data Filters Tim ing and synchronization signals CCI and MSI may be made either TT L- or C M OS-com patible through use of the Logic-S hift Voltage (VLS) input. Specific

Contextual Info: UNITED MICROELECTRONICS 0e! .9325812 ÏÊ| 1325012 0000200 Q | U N ITED MICROELECTRONICS 890 00288 U A 1300 SERIES |Gate Arrays } = Features • Silicon-gate 2.0 micron drawn double metal HCMOS technology. ■ Speeds higher than 74/TT L-1.7ns through 2-input NAND gate and interconnection,

2211C

Abstract: xr2211
Contextual Info: XR-2211 Section 11 XR-2211 FSK Demodulator/ Tone Decoder accommodate analog signals between 2 mV and 3V, and can interface with conventional DTL, TT L and E C L logic families. The circuit consists of a basic P LL for tracking an input signal frequency within the passband, a quad­

palce22v10 programming guide

Abstract: PAL22V10-12/BKA
Contextual Info: ADV MICRO P L A / PLE/ ARRAYS EßE PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 0E575Eb OQETSSS 3 IAMDE ~\ T-46-I9-07 T—46—19—13 Advanced Micro Devices 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz

DNB-UJS

Abstract: DDT-UJS-TU2-1 opto InGan green CHIP LED LAMP LED 28500 mcd dominant DDB-UJS-RS1-1 DRR-NJS-T2U-1 dsw-usd-uv1-1 IR LED 810 nm SJS Products Chip led bi-color right angle common cathode
Contextual Info: DOMINANT Semiconductors Mp Innovating Illumination Si Hybrid, Revolutions e x t G e n e T tt ÉÉÉÜ m m sm m si Taking off with a myriad of colors Take a leap of faith in lighting technology, and before you land, you will discover" cmazzling array of scintillating colors right in your

pal 007a

Abstract: dr 13003 si 13003 PAL22V10 13003 111 x 13003 circuit al 13003 PAL 002a pal 010a PC 13003
Contextual Info: ADV MICRO P L A / PLE/ ARRAYS EßE 0E575Eb OQETSSS 3 ~\ T -46-I9-07 PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 IAMDE Advanced Micro Devices T—46—19—13 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz

Contextual Info: ,\G ^ S H A R R IS X CD22402 Semiconductor <*SSfeiBfes . _ „* \o O S A ^ c a " J a n u a ry 1999 „,\c .co vtx Sync Generator for TV Applications and Video Processing Systems c e *v C e tt e v t"a 'v * oï Features Description • Interlaced Com posite Sync Output

Contextual Info: 9: 32 PM S/UNI 9953 ASSP Telecom Standard Product Data Sheet Released ru sd ay ,0 7F eb S/UNI® 9953 ar y, 20 07 06 :5 PM5390 Data Sheet Proprietary and Confidential Released Issue 10 : January, 2007 Do wn l oa de d by C on te n tT ea m of Pa rtm in er In

Am29500

Abstract: RSN 312 H 24 RSN 315 H 41 CD3024 VC 5022 AM29520A/B3A rsn 315 AM29520A BDR02270 PD3024
Contextual Info: Am29520A/Am29521A Multilevel Pipeline Registers DISTINCTIVE CHARACTERISTICS • • • Four 8 -b it w ide registers Provides tem porary storage to r d a ta /in stru ctio n d e la y/ queuing Single 4 level or dual 2 level structure • • • • H igh-speed IM O X ECL internal technology, TT L com ­

Contextual Info: 0: 36 PM S/UNI 9953-POS ASSP Telecom Standard Product Data Sheet Released ar y, 20 07 07 :0 PM5392 sd ay ,0 7F eb ru S/UNI® 9953-POS Data Sheet Proprietary and Confidential Released Issue 3 : January, 2007 Do wn l oa de d by C on te n tT ea m of Pa rtm

VC 5022

Abstract: 1N30S4 CD3024 Am29500 H32 305 5V L RSN 312 H 24 2910A AM29520A PD3024 am29325
Contextual Info: A m 29520A /A m 29521A Multilevel Pipeline Registers DISTINCTIVE CHARACTERISTICS • • • Four 8 -bit w ide registers Provides tem porary storage to r d a ta /in stru ctio n d e la y/ queuing Single 4 level or dual 2 level structure • • • • H igh-speed IM O X ECL internal technology, TT L com ­

29520A

Abstract: CD3024 VC 5022 am29s20 Am29500 RSN 312 H 24 rsn 313 RSN 315 H 41 Am29S20A PD302
Contextual Info: A m 29520A /A m 29521A Multilevel Pipeline Registers DISTINCTIVE CHARACTERISTICS • • • Four 8 -bit w ide registers Provides tem porary storage to r d a ta /in stru ctio n d e la y/ queuing Single 4 level or dual 2 level structure • • • • H igh-speed IM O X ECL internal technology, TT L com ­

TT 2246

Abstract: TT 2146 2SC2110 2SD1915 2SD2010 toshiba c 2238 SD1547 2SD2235 2SC3665 2SC3820
Contextual Info: - 262 - m % tt T y p e No. € Manuf. 2SD 2224 M H SAN YO £ TOSHIBA fé T 2SC 4488 2 SC 3665 2SD 2226 □ — A 2SC 3689 2 SC 3326 2SD 2227 — * □ — A 2SC 3820 2SD 2228 a m a t a st 2 SC 4555 2 SC 4118 2 SD Ì012 0 Ç'C'i C'7'T 2 SC 2710 o rf oocn 280 2230

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

M4720D

Contextual Info: 2 2 0 \. 0BE d 96/S pssjAay ;u 0 ujnoop sin; jo pu 04; ;e suoisjAOjd 04; o; p o iq n s j 0i|ijn|. s| 0sn P0/U0S0J sm 6|j iiv uo^EJodjoQ i/\ia © £ 0 " 2 0 9 t " t ' l-V S ^5 8 9 8 1 -8 891 SZI Y i\ Tt Ot 56 P 6 II 01 58 > |o e g ) I (lU O Jj) m ru a u

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

Contextual Info: Film-Foil Capacitors Technical data Nominal capacitance Nominal voltage dc Energy Nominal current 100 900 40,5 90 pF± 10% V Ws A 2240 22,4 < 1,0 2 A V/ps mfì xIO"4 Cn U ndc WN In Max. Peak current Max. Pulse rise time Series resistance Dissipation factor

rsn 3502

Abstract: rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604
Contextual Info: FS7000 SERIES 0.5

m STANDARD CELL 1998 FS73A_B HOLTEK Semiconductor Inc. TABLE OF CONTENTS - INDEX -I. Functional Index of Macrocells ………………………….………… I-1 II. Alphanumeric index of Macrocells …………………………….…… II-1

Contextual Info: M e ta llize d P o lyeste r C a p a cito r for M otor Running ECWJJfc ECWJ Series A c o m p a c t , lig h t-w e ig h t c a p a c it o r s u ita b le fo r m o to r • fiffctcy ^ 7 ^ X 1 - ' # IJ i x f ^ 7 ru n n in g . N o n - in d u c tiv e ty p e u s in g m e ta lliz e d p o ly e s te r