TT 2144 Search Results

tt 2144

Abstract: B65716-L B65716-L-R26 B65716-L-R87 B65738-L-R87 b65716lr65
Contextual Info: TT 23 x 11 B65716-L PR 23 × 11 B65738-L Core 11,2 _ 0,2 TT • Also available with center hole ■ Types with special AL value on request ■ TT/PR cores are supplied in sets ø9,9 _ 0,4 Magnetic characteristics per set Σle/A e = 0,45 mm–1 le = 31,2 mm

N30 transformer core

Abstract: siemens siferrit N27 siemens N26 core siemens siferrit N87 N26 core transformer t38 transformer siemens N30 B65755-J-R87 tt 2144 SIEMENS n87
Contextual Info: Ferrites and Accesories Design Parameters for Low-Distortion and Power Transformers TT/PR Cores Preliminary Data Sheet Vakatseite 2 Design Parameters for Low-Distortion and Power Transformers 1 TT/PR Cores Fundamentals for low-distortion transformers for digital data transmission (ISDN, xDSL)

isplsi device layout

Contextual Info: bäE J> L A TT IC E S E M I C O N D U C T O R Lattice S 3 ûticm ,i GGQSt .71 fc,b4 p L S r and ispLSI 1048C Features • HIGH-DENSITY PROGRAMMABLE LOGIC — High-Speed Global Interconnects — 96 I/O Pins, 12 Dedicated Inputs, 2 Global Output Enables — 288 Registers

SV14B

Abstract: MS7102 ss 211 1SV11 1SV25 1SV45 MS7101 MS7111 MS7112 S3015A
Contextual Info: 178 - & m % tt £ Vr r h V 1S18 55 1S18 5 6 1S1857 lSVll 1SV25 1SV45 MS7101 MS 7102 MS7111 MS7112 S3015A S3015B $3046 $3053 SV14B SV14C SV24A SV24B SV36C am HE B Bn mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 55 450 450 300 fë Æ (mA) 150 150 100

TT 2146

Abstract: tt 2144 2sc3792 2SD1671 2SD1952 2SD1589 2sd1020 2sd2012 2sd1944 2SD2005
Contextual Info: - 26 0 - s tt s Type No. « Manuf. 2SD 2 1 2 7 X 2? 2SD 2 1 2 8 - ÎL 2SD 2129 2SD 2130 „ S S 2SD 2131 S 2 2 SD 2 1 3 2 □ —A zou 2133 f£» T 2SD 2136 fâ T 2SD 2142 □ —A 2 SD 2 1 4 3 , □ —A □ —A 2S0 2144S 2SD 21 4 4 , □ —A 2 SD 2 1 4 5

FMG-22R

Abstract: FMG-33R FMG22R FMB26L FMG33R FMB-33 FMB-34M SB JY 101C FMB-26L
Contextual Info: - 130- , M « tt * PRSM kff> FMB-26 FMB-26L FMB-29 FMB-29L FMB-32 FMB-32M FMB-33 FMB-33M FMB-33S FMB-34 FMB-34M FMB-34S FMB-36 FMB-36M FMB-39 FMB-39M FMG-11R FMG-11S FMG-12R FMG-12S FMG-13R FMG-13S FMG-14R FMG-14S FMG-21R FMG-21S FMG-22R FMG-22S FMG-23R FMG-23S

s t u 309d

Abstract: AMI Semiconductor socket 771 C451 4308B TLC 771
Contextual Info: SÖE D T EL ED Y N E COMPONENTS m Ö T 1 7 tü £ ÜQGb 3 Q I b CDG308, CDG309 CDG4308, CDG4309 SE M IC O N D U C T O R QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCHES ORDERING INFORMATION s o -« S u ite * Mount Pacfcìa* O rw * b tlc tt mrtrc , Gomm ^W Tefnp.FÄng«

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

TVR2D

Abstract: SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (°C> (A) ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 50 j 45 45 45 45 45 50 j 50 j 50 j 50 j 50 j 45 45 45 45 100 503 50 j 50 j 50 j SR400FH-60 SR400FV-70 SR400FV— 80

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

FMS-3FU

Abstract: FML-22R 709332a FMM-36S FML-12S FML-13S FML-14S FML-21R FML-21S FML-22S
Contextual Info: - -k M B s tt £ Pr s m m FML-12S FML-13S FML-14S FML-21R FML-21S FML-22R FML-22S FML-2SS FML-24S FML-31S FML-32S FML-33S FML-34S FML-36S FMM-22R y*r y if y * r y y >r V if v > r v V y> r y -*y> ry y >r y •ï y * r y *yy>r y 4*y> ry •*y> ry -*y> r y y> r y

F10P04Q

Abstract: F10P40F f6p20f F8P04Q FMB-23L 1591c F10P06Q F10P03Q F10P20F F10P20FR
Contextual Info: - 5Ê ft m F6 P 2 0 F F6 P 3 0 F F6 P 4 0 F F8P 0 3 Q F8P 0 4 Q & tt € H a * iv h B*4 v9B*4 '/ 9 B*4 '/ 9 - Prs m Vr s m kW (V) H V (V) Vr Vi Io (V) (V) (A) *8 m (°C) (A) iS] f t æ M (°C) (V) -h ISJ ft a • Ç- I Rinax Vpmax If s m I F (A) T C C )

S60FUR04

Abstract: S52B S52C S60FFN01 S60FFN02 S60FFN04 S60FFN06 S60FFN08 S60FFN10 S60FFN12
Contextual Info: CO CO Oí o » CO oo co co eo LO LO LO LTD LO 51 i l s t ifr G st 5t s i s t a. s s s s s 51 5 t 5 Ì 5t =t s s s s » =1 51 5t 5t ^ L O LO LO LO co eO co co co LO LO LO LO LO i S St 5J. St 51 St 51 7 7 7 7 7 7 7 7 7 7 7 7 7 4tt4 »M O •W-WW-W-ttÜ •W -W -W -ffiJ -ffiJ •W -«0 -«o 4KJ 4Kl ■W 4W -W *KJ -tìO

rsn 3502

Abstract: rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604
Contextual Info: FS7000 SERIES 0.5

m STANDARD CELL 1998 FS73A_B HOLTEK Semiconductor Inc. TABLE OF CONTENTS - INDEX -I. Functional Index of Macrocells ………………………….………… I-1 II. Alphanumeric index of Macrocells …………………………….…… II-1

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

2482h b3

Abstract: 3204H PL 2305H PMC-2021098 1A27H 171bh 1D18 336FH 1733H 3583H
Contextual Info: 14 PM TUPP 2488 ASSP Data Sheet Register Description Released ob sd ay ,2 8O ct TUPP 2488 er ,2 00 4 12 :5 9: PM5364 rtm in er In co n Th ur SONET/SDH Tributary Unit Payload Processor For 2488.32 Mbit/s Interfaces Released Issue No. 6: August 2004 Do wn

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

reeves-hoffman

Abstract: TCXO 10 MHZ carlisle oscillator reeves-hoffman TCXO 1 ppm TCXO Quartz oscillator compensated 10 MHz
Contextual Info: DYNAMICS/REEVES-HOFFMAN 45E ]> 302004Ö 0000304 ^0 5 DC A -sa> - 2 3 RIEVES-HDFFMAM DIVISION DYNAMICS CORPORATION OF AMERICA OSCILLATORS HYBRID CLOCK OSCILLATORS Reeves-Hoffman Division produces a wide variety of hybrid clocks for computer, test equipment,

SCR 2140

Contextual Info: POUJEREX INC T IP D • 7EiMbEl"T0ClTôTs" 1 T¿?3 -J3 Rectifier Assemblies-ÂîrCooled Assembly Module Type Device Max. Voltage Avail. V T Ambient -=40°C N.C. PDA6R620_ 30 1200 394 _30 _ 30 PDA6R620_40 2000 358 294 420 380 43 4 432 392 _40

S3H-02

Abstract: S19C s3vc0 S2LA20 s3h 02 S1K20H S1K40 S6K20 S2K20H S2K40
Contextual Info: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S19J S19L S20C S20D S20E S20G S20J S20L S20L60 S30L40 S3QL60 S51A

tt 2144

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module ADE-203-725A Z Rev. 1.0 Feb. 27, 1997 Description The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Hitachi DSA00166

Abstract: Nippon capacitors
Contextual Info: HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module ADE-203-725A Z Rev. 1.0 Feb. 27, 1997 Description The HB56D473EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Hitachi ED 101

Abstract: Hitachi DSA0088 74ABT16244ADGG 5151L
Contextual Info: HB56U164EJ-6C/7C/8C 1,048,576-Word x 64-Bit High Density Dynamic RAM Module Rev. 0.0 May. 22, 1995 The HB56U164EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

Contextual Info: HB56D172EJ Series 1,048,576-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56D172EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 byte processor applications.