1SV25 Search Results

1sv257

Contextual Info: TOSHIBA 1SV257 Variable Capacitance Diode U nit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • Ultra Low Series Resistance : rs = 0.2Q Typ. • Useful for Small Size Set A bso lu te M axim um R atings (Ta = 25 C) CHARACTERISTIC R everse V o lta g e

Contextual Info: Product specification 1SV250 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small interterminal capacitance C=0.23pF typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small forward series resistance (rs=4.5

S3015A

Abstract: 1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015B S3046
Contextual Info: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë

Contextual Info: Ordering number : EN4403B 1SV251 PIN Diode http://onsemi.com Dual series PIN Diode for VHF, UHF and AGC 50V, 50mA, rs=max 4.5Ω, CP Features • • • Small-sized package facilitates high-density mounting and permits 1SV251-applied equipment to be made smaller

diode bridge toshiba

Abstract: 1SV252
Contextual Info: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125

smd rf transistor marking

Abstract: 1SV252 transistor marking smd MARKING BE marking BY marking RF marking RF 98 smd marking rs smd symbols
Contextual Info: Diodes SMD Type VHF~UHF Band RF Attenuator Applications 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Sym bol Rating Unit VR 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25

marking fv

Abstract: 100MHZ 1SV250
Contextual Info: Diodes SMD Type PIN Diode for VHF, UHF, AGC Applications 1SV250 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small interterminal capacitance C=0.23pF typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small forward series resistance (rs=4.5

S3015A

Abstract: MS7101 TI 7A 1SV11 1SV25 1SV45 MS7102 MS7111 MS7112 S3015B
Contextual Info: 1 78 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë

S3015A

Abstract: ss 211 1SV11 1SV25 1SV45 MS7101 MS7102 MS7111 MS7112 S3015B
Contextual Info: 178 - & m % tt £ Vr r h V 1S 18 5 5 1S 18 5 6 1S1857 lSVll 1SV25 1SV45 M S7101 M S 7102 MS7111 MS 7 1 1 2 S30 1 5 A S30 1 5 B $3046 $3053 SV 14B SV14C SV24A S V 24B S V 36C am H E B B n mz Bn 25 25 20 Vr * IFM (V) (mA) 25 25 20 70 30 450 450 300 fë

N4403A

Abstract: 1SV251
Contextual Info: 注文コード No. N 4 4 0 3 A 1SV251 No. N4403A N3099 半導体ニューズ No.4403 とさしかえてください。 1SV251 特長 シリコンエピタキシァル形 VHF・UHF・AGC 用 PIN ダイオード ・小型外形のため高密度実装および小形設計が可能である。

Contextual Info: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » -ES 2 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range

TOSHIBA Semiconductor Reliability Handbook derating concept and method

Abstract: 1SV252
Contextual Info: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C

1SV251

Abstract: EN4403A
Contextual Info: Ordering number :EN4403A 1SV251 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Package Dimensions • Small-sized package facilitates high-density mounting and permits 1SV251-applied equipment to be made smaller. · Small interterminal capacitance C=0.23pF typ .

1SV257

Abstract: C10V toshiba small signal diode
Contextual Info: TOSHIBA Discrete Semiconductors 1SV257 Variable Capacitance Diode Unit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • Ultra Low Series Resistance : rs = 0.2Ω Typ. • Useful for Small Size Set Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC

1SV254

Abstract: D208
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV254 TV T U N IN G . • H igh C apacitance R atio : C 2V /C 25V = 6.5 Typ. • Low Series R esistance : r s = 0.4ii (Typ.) • E xcellent C-V C h aracteristics, an d Sm all T rack in g E rror. •

1SV258

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV258 C A T V CONVERTER 1st OSC T U N IN G . • • • High Capacitance Ratio : C2V/C20V = 8 Typ. Low Series Resistance : rs = 0.73U (Typ.) Useful for Small Size Tuner. M A X IM U M R ATINGS (Ta = 25°C)

DIODE MARKING GV

Abstract: smd marking gv 100MHZ 1SV251 smd diode gv
Contextual Info: Diodes SMD Type PIN Diode for VHF, UHF, AGC Applications 1SV251 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small interterminal capacitance C=0.23pF typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small forward series resistance (rs=4.5

Contextual Info: Ordering number: EN4 4 0 3 1SV251 No.4403 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications SAifYO i F eatu res •Small-sized package facilitates high-density mounting and permits lSV251-applied equipment to be made smaller. ■Small interterm inal capacitance C = 0.23pF typ .

Contextual Info: SILICON EPITAXIAL PIN TYPE 1SV252 U nit in mm V H F — UHF B A N D RF A TTEN U A TO R APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If Tj Tstg RATING

1SV252

Contextual Info: 1SV252 東芝ダイオード シリコンエピタキシャルPIN形 1SV252 ○ VHF･UHF バンド減衰器用AGC 用 • 単位: mm 超小型パッケージ • 低容量 • 直列抵抗が小さい。 : rs = 3.5 Ω : CT = 0.2 pF 標準 絶対最大定格 (Ta = 25°C)

1SV252

Contextual Info: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C

1sv257

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV257 VCO FOR UHF BAND RADIO • Ultra Low Series Resistance : rs = 0.2il Typ. • Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Reverse Voltage VR Junction Temperature

Contextual Info: Product specification 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Sym bol Rating Unit VR 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25

Contextual Info: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125