TT 105 N 14 Search Results

EUPEC TT 105 N 12

Abstract: EUPEC TT 105 N 14 EUPEC tt 105 N 16 EUPEC tt 105 EUPEC TT 105 N of EUPEC tt 105 N 16 TT 105 N 12 DT105N EUPEC 105 N 16 L eupec tt105
Contextual Info: EUPE.C 34032^7 DDD1074 4fib « U P E C blE 3> TT 105 N, TD 105 N, DT105 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values 600, 800 1000, 1200 1400,1600 V V V V rsm = VRRM + 100 V Itrmsm Itavm Itsm 160 105 2600

EUPEC TT 105 N 12

Abstract: EUPEC TT 105 N 14
Contextual Info: EUPE.C L IE ¡D • 34032=17 0 0 D1 D7 H Hfib « U P E C TT 105 N, TD 105 N, DT105N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

HTYG-4

Abstract: tube el 36 EL-9600
Contextual Info: RAYTHEON R K -1 2 AM ATEUR R -F TRIODE POW ER A M P L IF IE R O SC ILLA T O R POW ER A M P L IF IE R — C L A S S M A X IM U M 750 105 40 25 v o lts ma m* w a tt s 750 — 100 105 35 165 5.2 55 v o lts v o lts ma ma v o lts w a tt s w a tt s T Y P IC A L O P E R A T IO N

T0252

Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Contextual Info: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)

Contextual Info: PM8313 D3MX DATA SHEET ISSUE 5 M13 MULTIPLEXER :2 0: 43 PM PMC-920702 5N Th ur sd ay ,2 D3MX ov em be r, 20 04 01 PM8313 ISSUE 5: JULY 1998 Do wn lo ad ed by C on te n tT ea m of Pa r tm in er In co n M13 MULTIPLEXER PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

2edg-gb-5.08

Contextual Info: A DEGSON r- DEGSON ELECTRONICS CO., LTD. % m M m R mM: SS # M2.5 t t f f f t . f£ $ PA66. UL94V-0 14 : H £ : %n ii m 300V 15A 20m Q 5000MQ /DC 1000V AC2000V/1 Min 28-12AWG 2.5mm! a s fe ll: ÎÎM fc P I w ^ tt lg ;S Jt & IS = ffl « -40°C~+105°C 0.4N m 3.6lb.in

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

panasonic film capacitor marking code

Contextual Info: THIRD ANGLE PROJECTION ITEM CODE A A ECWF2683 a 2753( // 2823 { u 2913( // 2 104 ( // 2 1 14 ( // 2 124 ( // 2 134 ( it 2 154 ( // 2 164 ( // 2 184 ( // 2204 ( // 2224 ( // 2244 ( // 2274 ( // 2304 ( // 2334 ( // 2364 ( // 2394 ( // 2434 ( // 2474 ( // 25 14 (

Contextual Info: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

Contextual Info: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

VG26426

Contextual Info: VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in

VG264265BJ

Abstract: VG264260BJ-35 vg264265bj-35 VG264265 VG264260B VG26V4265BJ vg264265b
Contextual Info: VG26V4265BJ 262, 144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design

tt 2222

Abstract: VC 5022-2 TT2222 222k x7r 100 C222M TT 2222 cross reference Philips 2222 016 capacitors 2222 122 capacitor philips 15X7R 2222 731 54152
Contextual Info: Philips Components 14- o-lO-q- ta 23S Product specification Leaded ceramic multilayer capacitors Mono-kap series FEATURES • Very high capacitance per unit vqlume • Low cost. M i o APPLICATIONS These conformally coated radial leaded capacitors are designed for

Contextual Info: A DEGSON ELECTRONICS CO., LTD. DEGSON r- M m R % m m M: * i / 2E D G -STD 2E D G -S T D -5.08 M 2.5 tt £ tt 14 : SS # : PA66. UL94V-0 % H ií m 300V 15A 20m Q 5000M O/DC1000V AC2000V/1 Min 28-12AWG 2.5mm! a s fe ll: w« tt m -40°C~+105°C 0.4N m (3.6lb.in

Contextual Info: im 7 i\,= .-0 h n m ^ y ? y y MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS C new T 1 05 C 105°C Ultra Miniaturized YXF YXG PX Low Impedance JXA JXB SPECIFICATIONS m § Items ft 1 i IK K H 4$ 14 - 5 5 — b105°C Operating Temperature Range 1 ft i i 1 6.3-50V.DC

diode 1600 rectifier

Abstract: 3 phase bridge rectifier TT 45 N 1200 3 phase bridge fully controlled rectifier B6HK B6U 205 B6U 125 TT 80 N 1200 scr for chopper B6U 550
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 16 IsoPACK Bridge Rectifier Type VDRM, VRRM V VDSM = VDRM VRSM = VRRM+ 100V IFRMSM ITRMSM A 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1) DD B6U 145 N 1) DD B6U 205 N 1)

8178 n

Abstract: C1126
Contextual Info: No. of p— DIMENSIONS Positions A B 2 3 2.54 5.08 5.58 8.12 4 7.62 10.66 5 10.16 13.20 6 12.70 15.74 7 15.24 18.28 8 17.78 20.82 9 20.32 23.36 10 22.86 25.90 11 25.40 28.44 12 27.94 30.98 13 30.48 33.52 14 33.02 36.06 15 35.56 38.60 16 38.10 41.14 17 40.64

IP173

Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)

S5188

Abstract: S5092-4B 610D S5092-6A SB05W05C SB05W05V SB07W03P SB10-18 SB20W05P
Contextual Info: CO co CQ co vP H-* ►P >P co co té co co 273A 433 432 433 273A 434 433 273A 273A 433 432 433 273A 432 273A 273A 433 433 563 273A 105 273A 563 1433 ¡273A 237B 105 m co 105 23TB 433 âcâè ¡273A 273A 553 237B 105 105 432 273A Q CQ co cr>lo o e— È&

TT 2222

Abstract: 473m ceramic capacitors 473m ceramic radial capacitors CW15C103K TT 2222 cross reference VC 5022-2 philips capacitor 17153 cog 100 101 j cog 100 473M capacitor
Contextual Info: Philips Components 14- o -lO-q- ta 23S Product specification Leaded ceramic multilayer capacitors Mono-kap series FEATURES • Very high capacitance per unit vqlume • Low cost. M i o APPLICATIONS These conformally coated radial leaded capacitors are designed for

S5188

Abstract: 610D S5092-4B S5092-6A SB05W05C SB05W05V SB07W03P SB10-18 237b .2TY
Contextual Info: CO co CQ co vP H-* ►P >P co co té co co 273A 433 432 433 273A 434 433 273A 273A 433 432 433 273A 432 273A 273A 433 433 563 273A 105 273A 563 1433 ¡273A 237B 105 m co 105 23TB 433 âcâè ¡273A 273A 553 237B 105 105 432 273A Q CQ co cr>lo o e— È&

Contextual Info: KOA MELF RESISTORS SPEER E L E C TR O N IC S , IN C . DESCRIPTIO N OF M ELF RESISTORS • Four 4 Standard Sizes: 0805, 1406, 1206, 2309 • 1/10 Watt to 1/2 Watt Power Ratings • 0.20 Ohm to 2.2 Meg Ohm Resistance Range • Tolerances to ±0.25% and TOR to 25ppm

Contextual Info: REV, ECD No. of Positions A B 6 10.00 12.40 7 12.00 14.40 8 14.00 16.40 DESCRIPTION 893 DIMENSIONS TT MV PART NUM BER CODING x P R N x x 4 E F N —RC 9 16.00 18.40 18.00 20.40 11 20.00 22.40 -NUMBER OF POSTIONS 6 - 30 12 22.00 24.40 -

Contextual Info: No. of Positions DIMENSIONS A B 2 2.54 5.58 3 5.08 8.12 4 7.62 10.66 5 10.16 13.20 6 12.70 15.74 7 15.24 18.28 8 17.78 20.82 9 20.32 23.36 10 22.86 25.90 11 25.40 2 8.44 12 2 7.94 30.98 13 30.48 33.52 14 33.02 36.06 15 35.56 38.60 16 38.10 4 1.14 17 4 0.64