TSOP 48 PACKAGE TRAY Search Results

TSOP 48 thermal resistance

Abstract: TSOP 48 thermal resistance type1 thin TSOP 8x20 package tray TSOP 32 thermal resistance TSOP 48 package tray JEDEC tray standard 13 Ablestik 12-1 signetics TSOP package tray TSOP1-48
Contextual Info: Signetics Flip Chip Package Data Sheet Signetics Data Sheet Signetics TSOP Type 1 Signetics Thin Small Outline Package Type1 Cross Section View of TSOP Type 1 Mold Compound Gold Wire Lead frame Die Die Attach Adhesive Signetics’ s TSOP Type1 packages are available in 32 - 48 lead counts with 0.50mm lead

JEDEC TRAY DIMENSIONS

Abstract: TSOP 8x14 TSOP 48 package tray TSOP 32ld tray JEDEC TRAY 10 X 10 shipping tray jedec tray scale TSOP package tray
Contextual Info: _L _L _L 001IHAL RELEASE. NOTE : 1. BAKEABLE TRAYS ARE INTENDED TO BE CONTINUOUSLY BAKED FOR 48 HOURS AT THE BAKE TEMPERATURE AS SPECIFIED. 2. TOTAL USABLE CELL COUNT IS 208. 3. TRAY VACUUM PICKUP METHOD REQUIRES A 28m m SQUARE MINIMUM WALLED PICKUP AREA , LOCATED AS CLOSE TO

CY62148E

Abstract: R1LP0108ESA-7SR
Contextual Info: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.

AMD AM28F010 ca

Abstract: AM29 flash 48-pin TSOP package tray tsop 48 PIN SOCKET pin identification AMD 2m flash memory Meritec Am29LV033B AM29F010 Am29F002N AM29F002
Contextual Info: Flash Memory Quick Reference Guide Summer ’98 Package Migration Low-Voltage Am29LV004 Am29LV008B Am29LV081 Am29LV116B Am29LV017B 2 Mb 4 Mb 8 Mb 16 Mb Am29LV010B Am29LV001B Am29LV020B Am29LV102B Am29LV040B Am29LV104B 1 Mb 2 Mb 4 Mb Am29LV200 Am29DL400B Am29LV400

28 TSSOP JEDEC Thin Matrix Tray outlines

Abstract: tsop tray matrix outline Shipping Trays ATMEL Packing Methods and Quantities ATMEL EIA-481-x Packing ATMEL 234 tsop Shipping Trays atmel tape and reel JEDEC Matrix Tray outlines EIA-481-x
Contextual Info: Available Packing Methods and Quantities Atmel provides four different packing methods to provide maximum protection for our product and to best suit our customer’s needs: 1 Shipping Tubes, 2) Shipping Trays, 3) Unit Packing, and 4) Tape and Reel. These first three

ATMEL 234

Abstract: ATMEL Packing Methods and Quantities ATMEL 210 atmel tape and reel ATMEL shipping label ATMEL Tape and Reel code ATMEL SOIC tape and reel ATMEL JEDEC SOIC atmel tape and reel JEDEC SOIC ATMEL Packing information JEDEC SOIC
Contextual Info: Available Packing Methods and Quantities Atmel provides four different packing methods to provide maximum protection for our product and to best suit our customer's needs: 1 Shipping Tubes, 2) Shipping Trays, 3) Unit Packing, and 4) Tape and Reel. These first three

land pattern for TSOP 2-44

Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

TSOP-48 pcb LAYOUT

Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

JEDEC Matrix Tray outlines

Abstract: ATMEL EIA-481-x Packing JEDEC tray standard for PLCC ATMEL Packing Methods and Quantities EIA-481-x JEDEC TRAY PLCC ATMEL Tape and Reel tsop Shipping Trays JEDEC tray standard 13 ATMEL shipping label
Contextual Info: Packages Available Packing Methods and Quantities Atmel provides four different packing methods to provide maximum protection for our product and to best suit our customer’s needs: 1 Shipping Tubes, 2) Shipping Trays, 3) Unit Packing, and 4) Tape and Reel. These first three methods are our standard pack, but we also

S25FL129

Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Contextual Info: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,

N04T1630C1BTR

Abstract: N04T1630C2BZ TSOP2-44
Contextual Info: N04T1630C1B N04T1630C2B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview Features The N04T1630C2B is an integrated memory device containing a low power 4 Mbit SRAM built

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

SMD MARKING CODE 071 A01

Abstract: smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo
Contextual Info: To Top Contents Safety Precautions 1 Introduction to Packages 1.1 Overview 1.2 Package Lineup 1.3 Package Forms 1.4 Package Structures 1.5 How Package Dimensions Are Indicated 1.6 Package Codes 1.7 Marking 1.8 Future Trends in Packages 2 Package Mounting Methods

S25FL256

Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:

CERAMIC CHIP CARRIER LCC 68 socket

Abstract: INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE LCCs 68 socket ic 7912 64 ceramic quad flatpack CERAMIC PIN GRID ARRAY CPGA lead frame CERAMIC LEADLESS CHIP CARRIER LCC 32 socket PCB footprint cqfp 132 Single Edge Contact (S.E.C.) Cartridge: 7912 pin configuration
Contextual Info: Introduction 1.1 1 Overview Of Intel Packaging Technology As semiconductor devices become significantly more complex, electronics designers are challenged to fully harness their computing power. Today’s products can feature more than seven million transistors and device count is expected to increase to 100 million by the year 2000. With a

71V416L

Abstract: 71V416YS tsop 48 PIN tray 71V416YL
Contextual Info: IDT71V416S IDT71V416L 3.3V CMOS Static RAM 4 Meg 256K x 16-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability

Atmel part numbering

Abstract: FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd
Contextual Info: Standard NOR Flash family Cross-reference guide September 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00012-3v0-E FRAM MB85R4001A MB85R4001A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

JS28F160B3BD70

Abstract: flash device MARKing intel 28f016 te28F320B3BD70 BGA PACKAGE TOP MARK intel uBGA device MARKing intel GE28F160B3BC70 JS28F320B3BD70 intel BGA PACKAGE TOP MARK 28F016B3 28F160B3
Contextual Info: Intel Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V V PP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option

BGA 23 x 23 array

Abstract: N04M163WL1A N04M163WL1AB N04M163WL1AT
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04M163WL1 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit Overview Features The N04M163WL1A is an integrated memory device intended for non life-support Class 1 or

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

N04M163WL1A

Abstract: N04M163WL1AB N04M163WL1AT N04M1618L2A
Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04M163WL1A 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit Overview Features The N04M163WL1A is an integrated memory

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

te28f320b3bd70

Abstract: TE28F320B3TD flash device MARKing intel 28f016 28F008B3 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 76000-77FFF
Contextual Info: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O Option