TSOP 173 G Search Results

Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100,120ns Max. • Low Power Dissipation Standby (CMOS) : 3,«W(Typ.) L-Version 1.5/i W(Typ.) LL-Version

KM62256C

Abstract: km62256 CCTG
Contextual Info: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)

LZ9G5100

Contextual Info: GATEARRAYS AND CELL-BASED ICs Si^* '-MSI Cl Gate Arrays Lineup of Gate Arrays ns 0.10 I I C 0.15 LZ9K ( LZ9J series ( LZ9B series I series I j y <D ¡1 0.4 >< a a) Q 0.5 0.9 ( LZ9F ( LZ9G J series ) series I I * I 300 500 1k 3k I I 5k 10k 30k 50k 100k 200k

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

TSOP 173 g

Abstract: 5H9602 6c9648 3b1326 5G9551 MIL-M-38535 6F9627 4c19 3C1660 atmel 906
Contextual Info: PAGE 1 OF 21 ATMEL COPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C040 CMOS EPROM RELIABILITY DATA* -125°C DYNAMIC OPERATING LIFE TEST -200°C RETENTION BAKE -PROGRAM AND ERASE -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

Contextual Info: j>" î f «SB SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

MSM514800A

Abstract: MSM514800ASL
Contextual Info: O K I Semiconductor MSM5 14800 A/ASL 524,288-W ord x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514800A/ASL is a 524,288-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514800A/ ASL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514800A/ASL is

0752B

Abstract: AT27C520 AT27C520-70SC AT27C520-70TC AT27C520-70XC AT27C520-90SC AT27C520-90TC AT27C520-90XC 20PIN 27C520
Contextual Info: Features • 8-Bit Multiplexed Addresses/Outputs • Fast Read Access Time - 70 ns • Low Power CMOS Operation • • • • • • • • • – 20 mA max. Active at 5 MHz 20-Lead TSSOP Package 20-Lead SOIC Package 28-Lead TSOP Package 5V ± 10% Supply

MSM5117800A

Abstract: MSM5117800
Contextual Info: O K I Semiconductor MSM5 1 17800A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800A achieves high integration, high-speed operation, and low-power

Contextual Info: IVI>41 Ind u strial G rade M X 2 7 L 1 0 0 0 MACRONIX. INC. 1 M-BITH 2BK x 8 ] LOW VOLTAGE OPERATION CMOS EPROM FEATURES • 128K x 8 organization • Wide power supply range, 2.7V DC to 3.6VDC • +12.5V programming voltage • Fast access time: 150/200/250 ns

Contextual Info: WED3EG72512SXX-JD3 -AJD3 White Electronic Designs ADVANCED* 4GB-2x256Mx72 DDR SDRAM REGISTERED ECC DESCRIPTION FEATURES n Double data rate architecture n DDR200 and DDR266 The WED3EG72512SXX-JD3 is a 2x256Mx72 Double Data Rate SDRAM memory module based on 1 GB DDR

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

Contextual Info: O K I Semiconductor MSM5117800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

DTM63618

Abstract: DTM63619 DTM63620 EEPROM14
Contextual Info: DTM63620, DTM63619, DTM63618 512MB-64Mx72, 256MB-32Mx72, 128MB-16Mx72, 184-Pin Registered DDR SDRAM DIMM Identification Performance range DTM63620 64Mx72 DTM63619 32Mx72 DTM63618 16Mx72 PC1600 200MHz/CL=2 Features Description Utilizes 100MHz DDR SDRAM Auto & self refresh capability DTM63620 is 8K Ref/64 MS,

Contextual Info: SONY» CXK58257ATM/AYM -7 0 U J 8 5 L L /1 0 L L /1 2 L L 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32 ,768 w o rds by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and battery back-up system s w h ich require extremely small package

UG7128D6688LP

Abstract: UG7128
Contextual Info: UG7128D6688LP Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 16 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES • • • 184-Pin DIMM ABSOLUTE MAXIMUM RATINGS Voltage Relative to GND

Contextual Info: UG7128D6688LQ Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 16 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES • • • 184-Pin DIMM ABSOLUTE MAXIMUM RATINGS Voltage Relative to GND

Contextual Info: H I TA C H I / L O G I C / A R R A Y S / M E M S1E » I MMIhEDa HM514410A Series- OOlfl?!? 3 ^0 • H I T 2 Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory ■ DESCRIPTION HM514410AJ Series The Hitachi HM514410A is a CMOS dynamic RAM organized 1,048,576-word x