TSOP 173 G Search Results
TSOP 173 G Datasheets Context Search
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Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100,120ns Max. • Low Power Dissipation Standby (CMOS) : 3,«W(Typ.) L-Version 1.5/i W(Typ.) LL-Version |
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KM68V4000AL/AL-L 120ns 18mW/1 KM68V4000ALG/ALG-L 32-SOP-525 KM68V4000ALT/ALT-L 32-TSOP2-400F KM68V4000ALR/ALR-L 32-TSOP2-400R | |
KM62256C
Abstract: km62256 CCTG
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KM62256C 100ns 110mW KM62256CLGI/CLGI-L KM62256CLTGI/CLTGI-L KM62256CLRGI/CLRGI-L 28-SOP-450 28-TSOP1 KM62256CLI/CLI-L km62256 CCTG | |
LZ9G5100Contextual Info: GATEARRAYS AND CELL-BASED ICs Si^* '-MSI Cl Gate Arrays Lineup of Gate Arrays ns 0.10 I I C 0.15 LZ9K ( LZ9J series ( LZ9B series I series I j y <D ¡1 0.4 >< a a) Q 0.5 0.9 ( LZ9F ( LZ9G J series ) series I I * I 300 500 1k 3k I I 5k 10k 30k 50k 100k 200k |
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ae29F2008
Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
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GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764 | |
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Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8 |
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UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil) | |
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Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8 |
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UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil) | |
TSOP 173 g
Abstract: 5H9602 6c9648 3b1326 5G9551 MIL-M-38535 6F9627 4c19 3C1660 atmel 906
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AT-27C040 MIL-M-38535 AT-27C1024 AT-27C512R AT-27C010 AT-27C040 12C/TSOP/SOIC/PDIP 6D9702 8B9832 TSOP 173 g 5H9602 6c9648 3b1326 5G9551 6F9627 4c19 3C1660 atmel 906 | |
mps2112
Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
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SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp | |
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Contextual Info: j>" î f «SB SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line |
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SM51441000LP 16MByte SM51441000LP 16-megabyte 100-pin, 70/80ns 20/16W 70/80ns) DQ115 DQ116 | |
MSM514800A
Abstract: MSM514800ASL
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MSM514800A MSM514800ASL MSM514800A/ASL 288-word MSM514800A/ 28-pin MSM514800ASL | |
0752B
Abstract: AT27C520 AT27C520-70SC AT27C520-70TC AT27C520-70XC AT27C520-90SC AT27C520-90TC AT27C520-90XC 20PIN 27C520
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20-Lead 28-Lead AT27C520 AT27C520 AT27C520-70SC AT27C520-70TC AT27C520-70XC AT27C520-90SC 0752B AT27C520-70SC AT27C520-70TC AT27C520-70XC AT27C520-90SC AT27C520-90TC AT27C520-90XC 20PIN 27C520 | |
MSM5117800A
Abstract: MSM5117800
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MSM5117800A 152-Word MSM5117800A 28-pin cycles/32 MSM5117800 | |
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Contextual Info: IVI>41 Ind u strial G rade M X 2 7 L 1 0 0 0 MACRONIX. INC. 1 M-BITH 2BK x 8 ] LOW VOLTAGE OPERATION CMOS EPROM FEATURES • 128K x 8 organization • Wide power supply range, 2.7V DC to 3.6VDC • +12.5V programming voltage • Fast access time: 150/200/250 ns |
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100/jA X27L1000 MX27L1000DI-20 MX27L1000DI-15 MX27L1000PI-25 MX27L1000MI-25 MX27L1OOOTI-25 MX27L1000PI-20 MX27L10O0MI-20 MX27L100OTI-20 | |
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Contextual Info: WED3EG72512SXX-JD3 -AJD3 White Electronic Designs ADVANCED* 4GB-2x256Mx72 DDR SDRAM REGISTERED ECC DESCRIPTION FEATURES n Double data rate architecture n DDR200 and DDR266 The WED3EG72512SXX-JD3 is a 2x256Mx72 Double Data Rate SDRAM memory module based on 1 GB DDR |
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WED3EG72512SXX-JD3 4GB-2x256Mx72 DDR200 DDR266 WED3EG72512S262AJD3 WED3EG72512S265AJD3 WED3EG72512S202AJD3 133MHz/266Mbps | |
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MSM51V17100
Abstract: 724540
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MSM51V17100_ 216-Word MSM51V17100 cycles/32ms MSM51V17100 A0-A11 b724240 724540 | |
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Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology. |
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MSM51V17100 216-Word 51V17100 216-w S4H40 2424D | |
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Contextual Info: O K I Semiconductor MSM5117800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology. |
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MSM5117800 152-Word MSM5117800 2048cycles/32ms | |
vjp44a
Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
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MS011798 vjp44a MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd | |
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Contextual Info: UG78D6646JG Data sheets can be downloaded at www.unigen.com 64M Bytes 8M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 4 pcs 8M x 16 DDR SDRAM 4K Refresh FEATURES • • PART IDENTIFICATION SDRAM PACKAGE PLATING 4K TSOP Gold |
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UG78D6646JG 64ms/4K) 1250mil) A0-A11: | |
BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
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HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99 | |
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Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8 |
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KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP D23bSfl 7TL4142 0G23bSc | |
2183AContextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V |
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KM68V1000C, KM68U1000C 128Kx8 KM68V1000C 32-SOP, 32-TSOP 32-sTSOP 2183A | |
TSOP 173 g
Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
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KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L | |
wells
Abstract: 676-3200111 Wells-CTI A 673 C2 transistor Wells-CTI 8 pin socket ES-P-676 Wells-CTI 800 SSOP SOCKET transistor mark ld 31495
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