TSOP 173 G Search Results

Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100,120ns Max. • Low Power Dissipation Standby (CMOS) : 3,«W(Typ.) L-Version 1.5/i W(Typ.) LL-Version

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

Contextual Info: j>" î f «SB SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

DTM63618

Abstract: DTM63619 DTM63620 EEPROM14
Contextual Info: DTM63620, DTM63619, DTM63618 512MB-64Mx72, 256MB-32Mx72, 128MB-16Mx72, 184-Pin Registered DDR SDRAM DIMM Identification Performance range DTM63620 64Mx72 DTM63619 32Mx72 DTM63618 16Mx72 PC1600 200MHz/CL=2 Features Description Utilizes 100MHz DDR SDRAM Auto & self refresh capability DTM63620 is 8K Ref/64 MS,

UG7128D6688LP

Abstract: UG7128
Contextual Info: UG7128D6688LP Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 16 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES • • • 184-Pin DIMM ABSOLUTE MAXIMUM RATINGS Voltage Relative to GND

Contextual Info: UG7128D6688LQ Data sheets can be downloaded at www.unigen.com 1G Bytes 128M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 16 pcs 64M x 8 DDR SDRAM 8K Refresh FEATURES • • • 184-Pin DIMM ABSOLUTE MAXIMUM RATINGS Voltage Relative to GND

Contextual Info: H I TA C H I / L O G I C / A R R A Y S / M E M S1E » I MMIhEDa HM514410A Series- OOlfl?!? 3 ^0 • H I T 2 Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory ■ DESCRIPTION HM514410AJ Series The Hitachi HM514410A is a CMOS dynamic RAM organized 1,048,576-word x

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

AN-450 surface mounting methods

Abstract: PLCC20 SO16W SO20W SO24W SO28W VSO40 VSO56 SMD ic catalogue Packaging trends
Contextual Info: Issued July 1995 020-420 Data Pack H An introduction to surface mounting Data Sheet What is surface mounting? What are SMDs? In conventional board assembly technology the component leads are inserted into holes through the PCB and connected to the solder pads by wave soldering

Kentron Technologies

Abstract: hynix ddr ram circuit diagram of ddr ram DDR DIMM pinout micron DDR DIMM pinout micron 184 DDR200 DDR266 PC2100
Contextual Info: 64M X 72 REGISTERED DDR DIMM DDR SDRAM FEMMA MODULE 512 Mega Byte 64M x 72 DDR SDRAM Low Profile Registered 184 Pin DIMM Preliminary General Description: This memory module is a high performance 512 Megabyte Registered synchronous dynamic RAM module organized as 64M x 72 in a 184-pin Dual In-Line Memory Module (DIMM)

Contextual Info: UGSN7005A8HXF-512 Data sheets can be downloaded at www.unigen.com 512MB 16M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 512MB 200pin DIMM (2PCS 256MB (16M x 144) module kit) PIN ASSIGNMENT (Front View)

VDDSPD

Abstract: PC200 SL64A8F32M8L-A10DW
Contextual Info: SL64A8F32M8L-A10DW 32M X 64 Bits 256MB 200-Pin DDR SDRAM SO-DIMM (PC1600) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A8F32M8L-A10DW is a 32M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SODIMM).

PC2100

Abstract: SL72A8F32M8M-A75EW
Contextual Info: SL72A8F32M8M-A75EW 32M X 72 Bits 256MB 200-Pin DDR SDRAM SO-DIMM with ECC (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL72A8F32M8M-A75EW is a 32M x 72 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

VDDSPD

Abstract: PC2100 SL64A6F16M8L-A75DW SL64A6F16M8L-A75EW general architecture of ddr sdram VDD107
Contextual Info: SL64A6F16M8L-A75xW 16M X 64 Bits 128MB 200-Pin DDR SDRAM SO-DIMM (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A6F16M8L-A75xW is a 16M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SODIMM).

Contextual Info: W g * CYPRESS 32K x 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply T he CY7C1399 is a high-perform ance 3.3V CM O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory ex­ pansion is provided by an active LO W chip

DQ463

Contextual Info: SL64A8F32M8L-A75EW 32M X 64 Bits 256MB 200-Pin DDR SDRAM SO-DIMM (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A8F32M8L-A75EW is a 32M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SODIMM).

DDR sdram gold

Abstract: AP-107 connector pinout
Contextual Info: SL64A8T64M8L-A###W 64M X 64 Bits 512MB 200-Pin DDR SDRAM SO-DIMM (PC1600/PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A8T64M8L-A###W is a 64M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SODIMM).

VDDSPD

Abstract: PC2100 SL64A6E8M4L-A75DW SL64A6E8M4L-A75EW
Contextual Info: SL64A6E8M4L-A75xW 8M X 64 Bits 64MB 200-Pin DDR SDRAM SO-DIMM (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A6E8M4L-A75xW is a 8M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SODIMM).

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its

NT256D64sh8c0gn-6k

Abstract: NT256D64SH8C0GN NT256D64SH8C0GM-6K DDR333 PC2700
Contextual Info: NT256D64SH8C0GM / NT128D64SH4C0GM NT256D64SH8C0GN GREEN 256MB and 128MB PC2700 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR333 256M bit C Die device Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • Address and control signals are fully synchronous to positive

27LV520

Abstract: AT27LV520 AT27C520 AT27LV520-90 AT27LV520-90SC AT27LV520-90SI AT27LV520-90TC AT27LV520-90XC
Contextual Info: Features • 8-Bit Multiplexed Addresses/Outputs • Fast Read Access Time - 90 ns • Dual Voltage Range Operation • • • • • • • – Low-Voltage Power Supply Range, 3.0V to 3.6V, or – Standard 5V ± 10% Supply Range Low Power CMOS Operation