TSOP 173 G Search Results

Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100,120ns Max. • Low Power Dissipation Standby (CMOS) : 3,«W(Typ.) L-Version 1.5/i W(Typ.) LL-Version

KM62256C

Abstract: km62256 CCTG
Contextual Info: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)

LZ9G5100

Contextual Info: GATEARRAYS AND CELL-BASED ICs Si^* '-MSI Cl Gate Arrays Lineup of Gate Arrays ns 0.10 I I C 0.15 LZ9K ( LZ9J series ( LZ9B series I series I j y <D ¡1 0.4 >< a a) Q 0.5 0.9 ( LZ9F ( LZ9G J series ) series I I * I 300 500 1k 3k I I 5k 10k 30k 50k 100k 200k

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

TSOP 173 g

Abstract: 5H9602 6c9648 3b1326 5G9551 MIL-M-38535 6F9627 4c19 3C1660 atmel 906
Contextual Info: PAGE 1 OF 21 ATMEL COPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C040 CMOS EPROM RELIABILITY DATA* -125°C DYNAMIC OPERATING LIFE TEST -200°C RETENTION BAKE -PROGRAM AND ERASE -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

Contextual Info: j>" î f «SB SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

MSM514800A

Abstract: MSM514800ASL
Contextual Info: O K I Semiconductor MSM5 14800 A/ASL 524,288-W ord x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514800A/ASL is a 524,288-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514800A/ ASL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514800A/ASL is

0752B

Abstract: AT27C520 AT27C520-70SC AT27C520-70TC AT27C520-70XC AT27C520-90SC AT27C520-90TC AT27C520-90XC 20PIN 27C520
Contextual Info: Features • 8-Bit Multiplexed Addresses/Outputs • Fast Read Access Time - 70 ns • Low Power CMOS Operation • • • • • • • • • – 20 mA max. Active at 5 MHz 20-Lead TSSOP Package 20-Lead SOIC Package 28-Lead TSOP Package 5V ± 10% Supply

MSM5117800A

Abstract: MSM5117800
Contextual Info: O K I Semiconductor MSM5 1 17800A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117800A achieves high integration, high-speed operation, and low-power

Contextual Info: IVI>41 Ind u strial G rade M X 2 7 L 1 0 0 0 MACRONIX. INC. 1 M-BITH 2BK x 8 ] LOW VOLTAGE OPERATION CMOS EPROM FEATURES • 128K x 8 organization • Wide power supply range, 2.7V DC to 3.6VDC • +12.5V programming voltage • Fast access time: 150/200/250 ns

Contextual Info: WED3EG72512SXX-JD3 -AJD3 White Electronic Designs ADVANCED* 4GB-2x256Mx72 DDR SDRAM REGISTERED ECC DESCRIPTION FEATURES n Double data rate architecture n DDR200 and DDR266 The WED3EG72512SXX-JD3 is a 2x256Mx72 Double Data Rate SDRAM memory module based on 1 GB DDR

MSM51V17100

Abstract: 724540
Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5117800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.

vjp44a

Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
Contextual Info: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages

Contextual Info: UG78D6646JG Data sheets can be downloaded at www.unigen.com 64M Bytes 8M x 64 bits SYNCHRONOUS DRAM MODULE 184 Pin DDR SDRAM Unbuffered DIMM based on 4 pcs 8M x 16 DDR SDRAM 4K Refresh FEATURES • • PART IDENTIFICATION SDRAM PACKAGE PLATING 4K TSOP Gold

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

wells

Abstract: 676-3200111 Wells-CTI A 673 C2 transistor Wells-CTI 8 pin socket ES-P-676 Wells-CTI 800 SSOP SOCKET transistor mark ld 31495
Contextual Info: A C P X X - BY REV DATE ECN# REV DATE C1 4-12-01 KM 01-0122 C2 6-5-01 BY ECN# REV KM 01-0199 C3 DATE 7-5-01 BY ECN# KM 01-0226 .204 2 4 5 .045±.017 LID STROKE 2 .043±.003 2-PLCS. .583 4 A A .579 10 CENTERS @ .0256=.230 .509 .031±.03 TYP. .139 .035 1 .365