TSM8 Search Results

N-Channel

Abstract: MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet
Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM897EW-C

Abstract: 935 MHz BAND PASS FILTER
Contextual Info: SAW Filter for EGSM Tx MODEL TSM897EW-C 1. ELECTRICAL CHARACTERISTICS : Ta = -20 to +70 °C ITEM Nominal I/O Impedance Nominal Center Freq. : f0 Pass Band Insertion Loss Ripple at Pass Band V.S.W.R. at Pass Band Attenuations 0.1 to 600 600 to 700 700 to 813

TSM4405P

Abstract: TSM8405P Ultra Low Qg
Contextual Info: TSM8405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET D D S Lateral Power for Load Switching and PA Switch S S G D G VDS = - 12V RDS on , Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ

800V 40A mosfet

Contextual Info: TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 ID (A) 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: TSM8405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET D D S Lateral Power for Load Switching and PA Switch S S G D G VDS = - 12V RDS on , Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ

Contextual Info: TSM85N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 100 10 @ VGS =10V 81 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 10mΩ (Max.) ● Low gate charge typical @ 154nC (Typ.)

DIODE B12

Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
Contextual Info: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.

Contextual Info: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 20 Features  RDS(on)(m) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Block Diagram Advance Trench Process Technology

800V 40A mosfet

Abstract: diode 800v
Contextual Info: TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 ID (A) 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 75 8 @ VGS =10V 80 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.)

diode b10

Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

mosfet 4800

Abstract: esd protect mosfet p channel mosfet 10a 20v 12v 10A mosfet 4800 mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor P channel MOSFET 10A 4800 power mosfet
Contextual Info: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 20 Features ● RDS(on)(mΩ) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Block Diagram Advance Trench Process Technology

TSM836EW-C

Contextual Info: SAW Filter for AMPS/CDMA/TDMA Tx MODEL TSM836EW-C ES-2 1. ELECTRICAL CHARACTERISTICS : Ta = -30 to +85 °C ITEM Nominal I/O Impedance Nominal Center Freq. : f0 Pass Band Insertion Loss Ripple at Pass Band V.S.W.R. at Pass Band Attenuation DC to 800 869 to 894

MOSFET 700V 10A

Abstract: MOSFET 700V TO 220 TSM8N70CI MOSFET 700V 4A ITO-220 700v 4A mosfet 700v 10A mosfet
Contextual Info: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.85 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: TSM80N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 75 8 @ VGS =10V 80 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.)

N-channel 500V mosfet

Abstract: A12 diode
Contextual Info: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.

SM8206

Abstract: SM8205
Contextual Info: • MICROCOMPUTERS ★ Under deveiopm ent 8-bit Single-chip Microcomputers • Memory bit Model No. ; ROM I RAM ! j Port 1 j j tetructai Supply [ . « Instruction cycle ■ [Interrupt set ; (/u s) I/O j current Standby; (mA) function! ose TYP. .M IN.

jh d83

Abstract: 1G05 DO-214M bj1022
Contextual Info: mm tm m Scottsdale, AZ m Microsemi Progress Pawer&ct by Technology 8700 E. Thomas Road Scottsdale, A Z 85252 602 941-6300 TSM B J1Ö 05C thru TSM BJ1027C Features • • • • • • • • • • Bidirectional Transient Voltage Protection Surge Capabilities up to 100 Am ps @ 10/1000ms or 300 Am ps @ 8/20^6 (note 2, 5)

Contextual Info: mm mmm S co ttsd a le , A Z M ic m m s e m Pfogm ss Powered by T&chnoiogy i 8700 E. Thomas Road Scottsdale, AZ 85252 602 941-6300 TSM BJ0505C th ru TSM BJ0527C Features • • • • • • • • • • Bidirectional Transient Voltage Protection Surge Capabilities up to 50 Amps

Flyback Transformers SANYO

Abstract: tsm947 k 942 TSM942EW TSM902EW-B TSM942AW4B tsj947 Transformers SANYO TSM897AW1B TSM897EW-C
Contextual Info: SANYO Downloads Specifications Features 1. Small size. 2. SMD package. 3. High reliability. SAW Filter for Communication RF Filter 800MHz Pass Insertion Center Band Loss IL Attenuation Applications Model Number Frequency (dB Min.) PB (dB (MHz) (MHz) Min.)

A91V

Abstract: A16V N5722 A0642 aafj
Contextual Info: - KNo N * 5 7 2 2 N O . $ 5722 33197 CMOS LSI LE28F4001 AM, ATS, ARS-15 — ' 4M 5 2 4 2 8 8 7 - Mx S t y K ; 7 5 "J mm LE28F4001AM, ATS, A R S ii, 524288 V - V x 8 £ y h Jg rii 0 i t > jK - K » ffi U . I V # - « iM iift jjfjf* 7 •y y -> * J * :') V b S>. MJ )2CMOS@S!8 CD\%m 1C i U . M i«, fflfà

TME 87

Abstract: tme 126 TSM30 TA40B TSM250 TSM12 tsm1000 TSM160 230 94 C TSM100
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CeTeBbie TpaHC$opMaTopbi cepuu TSM A n a M O H T a^a Ha n a H e n b C e p w a c e T e B u x T p a H c ^ o p M a T o p o B Ha IH -0 6 p a 3 H 0 M ce p fle H H M K e . M o H T M p y w r c fl Ha