TSM34 Search Results

MARKING PA TR SOT-23

Abstract: ultra low igss pA
Contextual Info: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TSM3458

Abstract: sot26 pa N-Channel mosfet sot-26
Contextual Info: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●

em 223

Contextual Info: TAIWAN SEMICONDUCTOR s TSM3441 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 654 P in D e fin itio n : 1. Drain 2. Drain 3. G ate V o s V ) 6. Drain 5, Drain 4 . Source R o W rn Q ) b (A ) 90 @ Vos = -4.5V -3.3 1 1 0 @ V gs = -2.5V -2.9

Contextual Info: T A IW A N S E M IC O N D U C T O R s TSM3460 20V N-Channel MOSFET w/ESD Protected b RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 654 3. Gate V DS V) 4. Source 20 1 23 Features R o s iW m O ) Id ( A ) 22 @ Vos = 4 .5 V

Contextual Info: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET b RoHS C O M P L IA N C E PRODUCT SUM M ARY SOT-26 V DS V) P in D e fin itio n : 654 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features R D S(on)<m Û) Id (A) 42 @ V gs = -4.5V -5.6

N-CHANNEL MOSFET 30V 2A SOT-23

Abstract: TSM3400 TSM3400CX
Contextual Info: TSM3400 30V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 30V RDS on , Vgs @ 4.5V, Ids @ 2A =70mΩ RDS (on), Vgs @ 10V, Ids @ 3.5A =50mΩ Features  Rugged and reliable  Excellent thermal and electrical capabilities

TSM3462

Abstract: TSM3462CX6
Contextual Info: TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.0 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Block Diagram ● Advance Trench Process Technology

Contextual Info: TSM3460 20V N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 22 @ VGS = 4.5V 6 40 @ VGS = 2.5V 5 60 @ VGS = 1.8V 2 Block Diagram ● Advance Trench Process Technology

Contextual Info: TSM3443 20V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDSON (mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology

Contextual Info: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channel MOSFET bl RoHS CO M PLIANCE SOT-26 65 4 PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source V ds {V 30 1 23 Features RDS on)(m£2) Id (A) 60 @ VGS= 10V 4.5 85 @ Vcs= 4.5V 3.6

Contextual Info: TAIW AN s TSM3460 SEMICONDUCTOR 20V N-Channel MOSFET w/ESD Protected bl RoHS CO M PLIANCE SO T-26 PRODUCT SUM M ARY Pin Definition: 1. Drain e. Drain 2. Drain 5, Drain 654 3. G ate V DS V 4. S ou rce 20 1 23 Features R osanna) Id (A) 22 @ Vos = 4.5V 6 40 @ Vg* = 2.5V

N-CHANNEL MOSFET 30V 2A SOT-23

Abstract: TSM3400 TSM3400CX
Contextual Info: TSM3400 30V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 30V RDS on , Vgs @ 4.5V, Ids @ 2A =70mΩ RDS (on), Vgs @ 10V, Ids @ 3.5A =50mΩ Features — Rugged and reliable — Excellent thermal and electrical capabilities

Contextual Info: TSM3448 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 40 @ VGS = 4.5V 5 60 @ VGS = 2.5V 2.5 Block Diagram ● Advance Trench Process Technology ●

P-Channel MOSFET code 1A

Abstract: rf p-channel low ciss rf p-channel low ciss mosfet
Contextual Info: TSM3409 60V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -60 Features ID (A) 220 @ VGS = -10V -2.2 310 @ VGS = -4.5V -1.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TSM3433

Abstract: MARKING ato
Contextual Info: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V

TSM3460CX6

Abstract: 4300 MOSFET s54 mo TSM3460
Contextual Info: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V

marking pa sot-26

Abstract: n-channel mosfet transistor ultra low igss pA TSM3446
Contextual Info: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●

Contextual Info: TSM3460 20V N-Channel MOSFET w/ESD Protected VDS = 20V Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on , Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =40mΩ (typ.) RDS (on), Vgs @ 1.8V, Ids @ 2A =60mΩ (typ.)

BL SOT26

Contextual Info: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channei MOSFET b RoHS COMPLIANCE SOT-26 654 PRODUCT SU MMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Vos {V) Id RDS on)(m£2) (A) 60 @ VGS= 10V 4.5 85 @ Vos = 4 .5 V 3.6 30 1 23 Features

6.2Y

Contextual Info: T A IW A N TSM3462 % S E M IC O N D U C T O R pb: COMPLÌANCE RoHS 20V N-Channei MOSFET PRO DUCT S JM M A R Y S O T-26 654 P in D e fin itio n : V o s (V 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source 20 1 23 F ea tu res F W rfm Q ) Id ( A ) 3 3 @ V CS = 4.5V

TSM3433

Contextual Info: TSM3433 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 42 @ VGS = -4.5V -5.6 57 @ VGS = -2.5V -4.8 80 @ VGS = -1.8V -1.4 Block Diagram ● Advance Trench Process Technology

TSM3441

Abstract: TSM3441CX6
Contextual Info: TSM3441 -20V P-Channel Enhancement-Mode MOSFET SOT-26 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = -20V RDS on , Vgs @ -4.5V, Ids @ -3A =100mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =150mΩ Block Diagram Features P-Channel MOSFET

TSM3457

Abstract: MARKING 952 SOT marking pa sot-26
Contextual Info: TSM3457 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 54 @ VGS = 10V -5 100 @ VGS = 4.5V -3.7 Block Diagram ● Advance Trench Process Technology ●

TSM3443

Abstract: TSM3443CX6 P-Channel MOSFET code L 1A marking pa sot-26
Contextual Info: TSM3443 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 65 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology