TSM3433CX6 Search Results
TSM3433CX6 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSM3433CX6RF |
|
20V P-Channel MOSFET | Original | 382.15KB | 6 |
TSM3433CX6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET b RoHS C O M P L IA N C E PRODUCT SUM M ARY SOT-26 V DS V) P in D e fin itio n : 654 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features R D S(on)<m Û) Id (A) 42 @ V gs = -4.5V -5.6 |
OCR Scan |
TSM3433 OT-26 TSM3433CX6 OT-26 | |
TSM3433Contextual Info: TSM3433 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 42 @ VGS = -4.5V -5.6 57 @ VGS = -2.5V -4.8 80 @ VGS = -1.8V -1.4 Block Diagram ● Advance Trench Process Technology |
Original |
TSM3433 OT-26 TSM3433CX6 TSM3433 | |
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Contextual Info: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET bl COMPLIANCE RoHS PRODUCT SUM M ARY SOT-26 V DS V P in D e fin itio n : 65 4 1. Drain 2. Drain 3. G ate 6. Drain 5, Drain 4 . Source -20 1 23 Features RDS(on)<mÛ) b (A) 42 @ Vgs = -4.5V -5.6 57 @ VCS= -2.5V |
OCR Scan |
TSM3433 OT-26 TSM3433CX6 |