TSM3460 Search Results

Contextual Info: T A IW A N S E M IC O N D U C T O R s TSM3460 20V N-Channel MOSFET w/ESD Protected b RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 654 3. Gate V DS V) 4. Source 20 1 23 Features R o s iW m O ) Id ( A ) 22 @ Vos = 4 .5 V

Contextual Info: TSM3460 20V N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 22 @ VGS = 4.5V 6 40 @ VGS = 2.5V 5 60 @ VGS = 1.8V 2 Block Diagram ● Advance Trench Process Technology

Contextual Info: TAIW AN s TSM3460 SEMICONDUCTOR 20V N-Channel MOSFET w/ESD Protected bl RoHS CO M PLIANCE SO T-26 PRODUCT SUM M ARY Pin Definition: 1. Drain e. Drain 2. Drain 5, Drain 654 3. G ate V DS V 4. S ou rce 20 1 23 Features R osanna) Id (A) 22 @ Vos = 4.5V 6 40 @ Vg* = 2.5V

TSM3460CX6

Abstract: 4300 MOSFET s54 mo TSM3460
Contextual Info: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V

Contextual Info: TSM3460 20V N-Channel MOSFET w/ESD Protected VDS = 20V Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on , Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =40mΩ (typ.) RDS (on), Vgs @ 1.8V, Ids @ 2A =60mΩ (typ.)

TSM3460

Abstract: TSM3460CX6
Contextual Info: TSM3460 20V N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.) Features Block Diagram Advanced trench process technology