TSD 1196 Search Results

CY7C1062AV25

Contextual Info: CY7C1062AV25 512K x 32 Static RAM Features Functional Description • High speed The CY7C1062AV25 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip CE1, CE2 and CE3 LOW and forcing the Write Enable (WE)

CY7C1062AV25

Contextual Info: CY7C1062AV25 512K x 32 Static RAM Features Functional Description • High speed The CY7C1062AV25 is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip CE1, CE2 and CE3 LOW and forcing the Write Enable (WE)

O16I

Abstract: CY7C1012AV25
Contextual Info: CY7C1012AV25 PRELIMINARY 512K x 24 Static RAM Features Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write enable input WE input is LOW. Data on the respective input/output (I/O) pins is then written into the location specified

CY7C1012AV25

Abstract: O16I
Contextual Info: CY7C1012AV25 PRELIMINARY 512K x 24 Static RAM Features Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write enable input WE input is LOW. Data on the respective input/output (I/O) pins is then written into the location specified

CY7C1061

Abstract: CY7C1061AV25 CY7C1061AV25-8ZC CY7C1061AV25-8ZI
Contextual Info: CY7C1061AV25 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).

CY7C1062AV25

Contextual Info: CY7C1062AV25 PRELIMINARY 512K x 32 Static RAM Features the address pins A0 through A18 . If Byte Enable B (BB) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18). Likewise, BC and BD correspond with the I/O pins I/O16

CY7C1061AV25

Abstract: CY7C1061AV25-8ZC CY7C1061AV25-8ZI CY7C1061A CY7C1061AV25-10BAI
Contextual Info: CY7C1061AV25 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).

Contextual Info: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Functional Description Features • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C

CG5982AF

Abstract: CY7C136
Contextual Info: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Features Functional Description • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C

CG5982AF

Abstract: CY7C136
Contextual Info: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Features Functional Description • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C

tsd 1196

Abstract: IS61LV3216
Contextual Info: ISSI IS61LV3216 ISSI IS61LV3216 32K x 16 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, and 17 ns • CMOS low power operation — 150 mW typical operating — 150 µW (typical) standby • TTL compatible interface levels • Single 2.7V to 3.6V power supply

Contextual Info: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 mΩ and 300 mΩ @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re

L9332

Abstract: MO-166 JESD97 L9332-DIE1 ecopack
Contextual Info: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 mΩ and 300 mΩ @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re

Contextual Info: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 mΩ and 300 mΩ @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re

Contextual Info: L9332 Quad intelligent power low side switch Features • Quad power low side driver with 3 A output current capability ■ Low RDSON typically 200 m and 300 m @ Tj = 25 °C ■ Internal output clamping structures with VFB = 50 V for fast inductive load current re

Contextual Info: Tem ic TCST5123 S e m i c o n d u c t o r s Transmissive Optical Sensor with Phototransistor Output Description T hese devices have a com pact construction w here the em itting-light sources and the detectors are located faceto-face on the sam e optical axis. T he operating

Telefunken Phototransistor

Abstract: TCST1230
Contextual Info: TCST1230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face1–to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST1230
Contextual Info: TCST1230 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face1–to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

TCST1230

Contextual Info: TCST1230 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST1230
Contextual Info: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Contextual Info: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: TCST5123
Contextual Info: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the

Telefunken Phototransistor

Abstract: TCST1230
Contextual Info: TCST1230 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emittig-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a

Telefunken Phototransistor

Abstract: all phototransistor TCST5123
Contextual Info: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a