TS-001AA PACKAGE Search Results

001-AA

Contextual Info: Power Packages TS-001AA Alternate Version 5 LEAD JEDEC TS-001AA PLASTIC PACKAGE ØP E INCHES A A1 MIN MAX MIN MAX Q H1 TERM. 4 D L1 b1 60o 1 2 3 4 5 e A 0.170 0.180 4.32 4.57 - 0.048 0.052 1.22 1.32 3, 4 b 0.030 0.034 0.77 0.86 3, 4 b1 0.031 0.041 0.79 1.04

001-AA

Contextual Info: Power Packages TS-001AA Alternate Version 5 LEAD JEDEC TS-001AA PLASTIC PACKAGE ØP E INCHES A A1 Q H1 TERM. 4 D L1 b1 60o 1 2 3 4 5 e MAX MIN MAX J1 e1 NOTES A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 3, 4 b 0.030 0.034 0.77 0.86 3, 4 b1 0.031 0.041

600V Current Sensing N-Channel IGBT

Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
Contextual Info: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V

Contextual Info: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V

12n60d1c

Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
Contextual Info: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V

Contextual Info: 4 3 0 3 2 7 1 D O S M f l n ffl HUSK’S April 1993 « m HAS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Package Features TS-001AA TOP VIEW • 18A, 100V • rDS ON .° ' 1£i

F18N10CS

Abstract: RFB18N10CS F18N10 RFB18N10
Contextual Info: m RFB18N10CS H A R R IS S E M I C O N D U C T O R Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package TS-001AA TOP VIEW • 18A, 100V • r D S O N .° ' 1£1

IRF510N

Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
Contextual Info: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5

Contextual Info: Plastic Package Single-In-Line Plastic Package SIP ØP Z5.067 (JEDEC TS-001AA ISSUE A) 5 LEAD PLASTIC SINGLE-IN-LINE PACKAGE A E A1 INCHES Q H1 D TERM. 6 45o E1 D1 M L c 60o 1 2 3 4 5 e J1 b e1 NOTES: 1. These dimensions are within allowable dimensions of Issue A of

12v class d amplifier 70W

Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
Contextual Info: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V

12v class d amplifier 70W

Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
Contextual Info: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V

25E03

Contextual Info: HIP2060 fü HARRIS S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001A A ALTERNATE VERSIO N HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(QN) Max Per Transistor at VGS = 15V

IW4066B

Abstract: IW4016BD
Contextual Info: TECHNICAL DATA Quad Bilateral Switch IW4016B General Description The IW4016B is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. Features Wide supply voltage range: 3V to 15V Wide range of digital and analog switching: ±7.5 V PEAK

Contextual Info: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: International IOR Rectifier Data Sheet No. PD -6.046C IR2 1 0 4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage V offset lo+/- dV/dt immune

Contextual Info: International I R Rectifier Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: International IO R Rectifier Data Sheet No. PD-6.035F IR2152 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout

Contextual Info: 4355455 0 0 2 7 b fll International I R Rectifier Data Sheet No. PD-6.032C IR2131 3 HIGH SIDE AND 3 LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage

Contextual Info: International I R Rectifier Data Sheet No. PD -6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary • G ate drive supply range from 12 to 18V ■ Undervoltage lockout ■ Current detection and limiting loop to limit driven power transistor current

Contextual Info: Data Sheet No. PD-6.026C International I R Rectifier IR2112 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V