RFB18N10CS Search Results

Contextual Info: 4 3 0 3 2 7 1 D O S M f l n ffl HUSK’S April 1993 « m HAS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Package Features TS-001AA TOP VIEW • 18A, 100V • rDS ON .° ' 1£i

F18N10CS

Abstract: RFB18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10
Contextual Info: RFB18N10CS 18A, 100V, 0.100 Ohm, Current Sensing, N-Channel Power MOSFET August 1997 Features Description • 18A, 100V The RFB18N10CS is an N-Channel enhancement-mode silicon-gate power field-effect transistor which has a built-in current sensing function. The current sense lead provides an

F18N10CS

Abstract: RFB18N10CS F18N10 RFB18N10
Contextual Info: m RFB18N10CS H A R R IS S E M I C O N D U C T O R Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package TS-001AA TOP VIEW • 18A, 100V • r D S O N .° ' 1£1

Contextual Info: RFB18N10CSHM Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ

Contextual Info: RFB18N10CS Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Contextual Info: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl

RLP5N08LE

Abstract: 720 transistor transistor field-effect transistor
Contextual Info: — POWER MOSFETs 7 INTELLIGENT DISCRETES PAGE INTELLIGENT DISCRETE DATA SHEETS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor 7-3 RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs 7-8 RLP1N06CLE

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

RHR30120

Abstract: RCA1A15 RCA1A11 RCA1C08 RC1566 rc3154 RCA1A09 RCA1A18 RCA1C13 RCA3055
Contextual Info: • P art N u m b e r M fr Qty/Note 7600345 P a rt N u m b e r □ □□□37 6 M fr -no Qty/Note ■ P a rt N u m b e r M fr Qty/Nol RC1466 REI CALL RC6S5TL/R REI 179 REF03GP RC1469 ANA 167 REI CALL RC668L REI 158 REF03GS RC1472U ANA 71 REI 390 RC78T12ACK UT

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: