F18N10CS Search Results

Contextual Info: 4 3 0 3 2 7 1 D O S M f l n ffl HUSK’S April 1993 « m HAS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Package Features TS-001AA TOP VIEW • 18A, 100V • rDS ON .° ' 1£i

F18N10CS

Abstract: RFB18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10
Contextual Info: RFB18N10CS 18A, 100V, 0.100 Ohm, Current Sensing, N-Channel Power MOSFET August 1997 Features Description • 18A, 100V The RFB18N10CS is an N-Channel enhancement-mode silicon-gate power field-effect transistor which has a built-in current sensing function. The current sense lead provides an

F18N10CS

Abstract: RFB18N10CS F18N10 RFB18N10
Contextual Info: m RFB18N10CS H A R R IS S E M I C O N D U C T O R Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package TS-001AA TOP VIEW • 18A, 100V • r D S O N .° ' 1£1

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Contextual Info: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl