TRW 2210 Search Results

TMC2010

Abstract: TDC1010 TMC2110 TMC2210 ADSP-1010 P40Y block diagram of 8*8 array multiplier 32 bit booth multiplier for fixed point
Contextual Info: TRW TM C2210 CMOS Multiplier-Accumulator Fe a tu re s 1 6 x 1 6 Bit, 65, 80, 100, 160ns • 65, 80, 100 Or 160ns M ultiply-Accum ulate Time • 1 6 x 1 6 Bit Parallel M ultiplication W ith Accumulation To 3 5-B it Result • Selectable Accum ulation, Subtraction, Rounding And

TMC2010

Abstract: trw radar ac 2210n0c1 tdc1010 ADSP-1010 TMC2210 2210j J61X TMC2210G8C 2210NOC
Contextual Info: TRW TM C2210 CM O S Multiplier-Accumulator Fe a tu re s 1 6 x 1 6 Bit, 65, 80, 100, 160ns • 65, 80, 100 Or 160ns M ultiply-Accum ulate Time • 1 6 x 1 6 Bit Parallel M ultiplication W ith Accumulation To 3 5-B it Result • Selectable Accum ulation, Subtraction, Rounding And

TMC2010

Abstract: CY7C510 2210J0 y12 t 930 TDC1010 tmc2110
Contextual Info: TRW TMC2210 C M O S Multiplier-Accumulator Features 1 6 x 1 6 Bit, 45, 55, 65, 80, 95ns • 45, 55, 65, 80 Or 95ns Multiply-Accumulate Time The TMC2210 is a high-speed 1 6 x1 6 bit digital multiplier-accumulator which is available in speed bins of 45, 55, 65, 80 or 95ns. Input data may be specified as

TRW 2210

Abstract: 2210G8C c2210 2210j 2210G8 TMC2210 adsp-1010
Contextual Info: TMC2210 T CMOS Multiplier-Accumulator 1 6 x 1 6 Bit, 65, 80, 100, 160ns The T M C 2210 is a high-speed 1 6 x 1 6 bit digital m ultiplier-accum ulator w h ich is available in fo u r speed bins of 65, 80, 100 or 160ns. Input data may be specified as tw o 's com plem ent or unsigned m agnitude

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

HM511000

Abstract: dynamic ram 8 bit hm511000 HM511000P M511000 HM511000-12 HM511000-10 HM511000JP-12 DG 402 rp HM511000ZP-12 ir 2210 ic
Contextual Info: HM511000 Series 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511000 has realized higher density, higher performance and various functions by employing 1.3/im CMOS process technology and some new CMOS circuit

SAMPLE HOLD AMPLIFIER single supply

Abstract: ICL7650ITV AIR FLOW DETECTOR MAR6
Contextual Info: / T L I T 1 Ç A R _ LTC1052/LTC7652 TECHNOLOGY Chopper-Stabilized Operational Amplifier CSOA KflTURCS DCSCRIPTIOn • Guaranteed Max. Offset 5/*V ■ Guaranteed Max. Offset Drift 0.05/xV/°C ■ Typ. Offset Drift 0.0 W ° C ■ Excellent Long Term Stability

Contextual Info: HM511002A S eries-1,048,576-word x 1-bit CMOS Dynamic RAM • DESCRIPTION H M 5U 002A P Series The Hitachi HM511002A Series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. HM511002A has realized higher density, higher performance and vari­

voice scrambling

Abstract: ambulance TAG Semiconductor speech scrambler voice encryption ic Variable split band scrambling police TRW speech
Contextual Info: CML Semiconductor Products AN/Sec/Gen /1 November 1997 Inversion Security Devices Split-Band Scrambling Furnishes Voice Security Unwanted consequences of third-party radio communications eavesdropping include foiled drug raids, unsolved burglaries and pirated business opportunities.

HM511002AP-6

Abstract: T10E
Contextual Info: HM511002A Series 1,048,576-word x 1-bit CMOS Dynamic RAM • DESCRIPTION H M 5U 002A P Series The Hitachi H M 511002A Series is a C M O S dynamic RAM organized 1,048,576word x 1-bit. H M 511002A has realized higher density, higher performance and vari­ ous functions by employing 1.3 jum C M OS process technology and some new

Contextual Info: HITACHI/ MCU/MPU ^2 I>e | 44TL204 □ Q l E 3 0 b 5 -4TÔ6 2 Ö 4 H 1 iACH i / M C U /M P U 92D 12306 dH HD63085-—-—T-53-333bDI CEP Document Image Compression and Expansion Processor PRELIM INARY- The HD63085 (DICEP) is a LSI th a t compresses (or encodes)

ambulance

Abstract: voice encryption ic speech scrambler scrambling TAG Semiconductor Variable split band scrambling trw 10001 frequency hopping tactical
Contextual Info: APPLICATION NOTE Variable Split-Band Scrambling VSB Variable Split-Band Scrambling (VSB) Furnishes Voice Security Introduction Voice scrambling offers tactical security for radio dispatch communications. It takes so long, even for a dedicated eavesdropper, to unscramble your transmissions that the information would be worthless by then.

181-D

Abstract: 54AC11175 74AC11175 109-D3388
Contextual Info: 54AC11175, 74AC11175 QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR TI0109— D3388, DECEMBER 1989— REVISED M ARCH 1990 Applications Include: Buffer/Storage Registers, Shift Registers, Pattern Generators 5 4 A C 1 1175 . . . J P ACKA G E 74A C 11 1 75 . . . D W O R N P ACKA G E

GMM7322100B

Contextual Info: G M M7322100BS/SG-60/70/80 LG Semicon Co.,Ltd. Description 2,097 ,1 5 2 W O R D S x 32 BIT CMOS DYNAMIC RAM MODULI; Features The G M M 7322100B S /S G is a 2M x 32 bits D ynam ic RA M M O D U L I; w hich is assem bled 16 pieces o f 1M x 4bit D R A M s in 24 pin SO J package on both sides the printed

d038

Abstract: KM44V4004B KM44V4104BK KMM374F400BK CA5B
Contextual Info: KMM374F400BK KMM374F410BK DRAM MODULE KMM374F400BK & KMM374F410BK EDO Mode without buffer 4Mx72 DRAM DIMM with ECC based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F40 1 0BK is a 4M bit x 72 Dynamic RAM high density memory module. The

WH 250-500

Abstract: LCD display intel 8080 COM16 SEG129
Contextual Info: ST Sitronix ST7573 132 x 33 Dot Matrix LCD Controller/Driver 1. INTRODUCTION ST7573 is a driver & controller LSI for graphic dot-matrix liquid crystal display systems. ST7573 contains 132 segment and 33 common driver circuits. This chip is connected directly to a microprocessor, accepts 3-line, 4-line serial peripheral

HM511000P

Abstract: HM511000P12S HM511000 HM511000ZP-10S HM511000-12
Contextual Info: -Preliminary HM511000S Serles 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000S series is a CMOS dynamic RAM or­ ganized 1048576-word x 1-bit. HM511000S has realized higher density, higher performance and various functions by employing

HM50464P-12

Abstract: s - ck5t HMS0464 HM50464CP-12 HM50464CP12
Contextual Info: H M 50464 Series 65536-word x 4-bit Dynamic Random Access Memory • • • • • • • • • • FEATURES Page mode capability Single 5V ±10% On chip substrate bias generator Low power: 350 mW active, 20 mW standby High speed: Access Time 120ns/150ns/200ns

AC723

Abstract: TRW10 NE 5322 TRW1030
Contextual Info: AC723 • ACT723 54AC/74AC723 • 54ACT/74ACT723 64 x 9 First-In, First-Out Memory Connection Diagrams Description The ’AC/’ACT723 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data

Contextual Info: ò rà er Alnmbe.r Mi/Tb^T NEW PRODUCT HB56A840B Series 8,388,608-Word X 40-Bit High Density Dynamic RAM Module - Under development - ^ H IT A C H I Rev.2 May. 22.1992 Description The HB56A840B is a 8M X 40 dynamic RAM module, mounted 20 pieces of 16Mbit ORAM

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Contextual Info: 16 x 1 6 PARALLEL CMOS MULTIPLIER-ACCUMULATOR IDT7210L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The IDT7210 is a high-speed, low-power 16 x 16-bit parallel m ultiplier-accum ulatorthatis ideally suited for real-time digital signal processing applications. Fabricated using CMOS

Contextual Info: HM514266 Series 262,144-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM 514266AP Series The Hitachi H M 514266A is a C M O S dynamic RAM organized 262,144-word x 4-bit. H M 514266A has realized higher density, higher performance and various func­

Contextual Info: _LTC1052/LTC7652 Chopper-Stabilized Operational Amplifier CSOA K R TU R C S DCSCftlPTIOn • Guaranteed Max. Offset 5nM ■ Guaranteed Max. Offset Drift 0.05/iV/°C ■ Typ. Offset Drift 0.0y V / °C ■ Excellent Long Term Stability 100nV/VMonth