TRISTATE BUFFER CMOS Search Results

AZP94

Contextual Info: AZP94 PECL/ECL ÷1, ÷2 Clock Generation Chip with Tristate Compatible Outputs www.azmicrotek.com FEATURES DESCRIPTION • Selectable Divide Ratio • Selectable Enable Polarity and Threshold CMOS or PECL • Tristate Compatible Outputs • Input Buffer Powers Down

PO22

Abstract: PO-99 PO44 ATL35 PO33 PO55 CMOS GATE ARRAY AO40
Contextual Info: PO11 ATL35 CMOS Gate Array cell data sheets 1.0 DESCRIPTION: Tristate output buffer, 2mA drive Truth Table: AO E0 PO11 E0 A0 E0 | P -X | Z 1 | 0 1 1 | 1 P E0 pchn2pad_x1 I1 AO AO gateP gateN outputDRVS1 I3 P I2 nchn2pad_x1 / $Revision: 1.35 $

TEMIC PLD

Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
Contextual Info: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The

AO4L

Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Contextual Info: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells

208-pin cpga

Contextual Info: Military 5.0V pASIC 1 Family Military 5.0V pASIC 1 Family - Very-High-Speed CMOS FPGA last updated 5/15/2000 Military 5.0V pASIC 1 Family DEVICE HIGHLIGHTS FEATURES Device Highlights Features Very High Speed • ViaLink“ metal-to-metal programmable technology, allows counter speeds over 150 MHz and

68-PIN

Abstract: 84-PIN cpga pinout 208-pin cpga
Contextual Info: Military 5.0V pASIC 1 Family Military 5.0V pASIC 1 Family - Very-High-Speed CMOS FPGA Military 5.0V pASIC 1 Family DEVICE HIGHLIGHTS FEATURES Device Highlights Features Very High Speed • ViaLink“ metal-to-metal programmable technology, allows counter speeds over 150 MHz and

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

CLA60000

Abstract: zarlink cla5000 CLA5000 16-LINE TO 4-LINE PRIORITY ENCODERS 4 bit binary multiplier CLA5000 Series Zarlink gate array RAD32D MVA50
Contextual Info: CLA60000 Series Channel less CMOS Gate Arrays This new family of gate arrays uses many innovative techniques to achieve 110K gates per chip with system clock speeds of up to 70MHz. The combination of high speed, high gate complexity and low power operation places Zarlink Semiconductor

full adder circuit using nor gates

Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
Contextual Info: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the

full subtractor circuit nand gates

Abstract: 8 bit carry select adder verilog codes PLESSEY CLA low power and area efficient carry select adder v 32 bit barrel shifter vhdl advantages of master slave jk flip flop half adder 74 full subtractor circuit using nand gate 0-99 counter by using 4 dual jk flip flop 3 bit carry select adder verilog codes
Contextual Info: AUGUST 1992 2462 - 4.0 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS Supersedes March 1992 edition - version 3.1 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC

Contextual Info: PLESSIEY SEMICONDUCTORS Appendix 7 ; CLA60000 SERIES CHANNELLESS CMOS GATE ARRAYS Supersedes December 1988 Edition This advanced family o f gate arrays uses many innovative techniques to achieve 110K gates pa r ch'p - system clock speeds in excess o f 70MHz are achievable. The combinatbn

ttl crystal oscillator 32khz

Abstract: DS3697 FQFP100 TQFP100 5mhz crystal oscillator MQFP-120
Contextual Info: CLR70000 1.0µ 0.8µ L eff CMOS Gate Arrays DS3697 ISSUE 2.0 March 1993 Ordering Information Features • 1.0µ (0.8µ Leff) twin well, epitaxial CMOS process • Architecture optimised for Quad Flat Packs • New peripheral design employing state-of-the-art pad

schematic of TTL XOR Gates

Abstract: TTL XOR Gates ttl 2-bit half adder cmos XOR Gates schematic XOR Gates xnor ttl ALU of 4 bit adder and subtractor "XOR Gates" XNOR GATE cmos gate nand nor xor
Contextual Info: 0.8µm Standard Cell General Features • • • • 0.8µm single poly, double metal CMOS technology Operating voltage: 5V/3V Propagation delay of 2-input NAND with fanout=2 – 0.3ns for 5V high performance – 0.5ns for 5V high density – 0.5ns for 3V high performance

74HCA

Abstract: C1995 MM74HCA240 MM74HCA240N Tri-State Buffer "tristate buffer" HCA240 HCA241
Contextual Info: MM74HCA240 Inverting Octal TRI-STATE Buffer MM74HCA241 Octal TRI-STATE Buffer General Description Features These TRI-STATE buffers utilize advanced silicon-gate CMOS technology They possess high drive current outputs which enable high speed operation even when driving large

MA1013

Abstract: MM54HCT244 C1995 MM74HCT240 MM74HCT244 MM54HCT244J MM74HCT241N
Contextual Info: MM54HCT240 MM74HCT240 Inverting Octal TRI-STATE Buffer MM54HCT241 MM74HCT241 Octal TRI-STATE Buffer MM54HCT244 MM74HCT244 Octal TRI-STATE Buffer General Description These TRI-STATE buffers utilize advanced silicon-gate CMOS technology and are general purpose high speed inverting and non-inverting buffers They possess high drive

6 input or gate

Abstract: t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic
Contextual Info: S-H 0 S SYSTEMS INC SbE » • 7ei3StiOti ÜDDlM'ia 076 «SIIO SLA8000 HIGH SPEED CMOS GATE ARRAY ■ DESCRIPTION The SLA8000 Series consists of a group of 13 high speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron silicon gate technology. Gate counts range from 5K to 80K

OP133

Abstract: 47c834 HS25 TMP47C834N TLCS-470 TMP47C834 TMP47C834F TMP47P834F TMP47P834N 47C860
Contextual Info: TOSHIBA TMP47C834 CMOS 4-BIT MICROCONTROLLER TMP47C834N TMP47C834F The 47C834 are based on the TLCS-470 CMOS series. The 47C834 have on-screen display circuit to display characters and marks which indicate channel or time on TV screen, A/D converter comparator input, and D/A

Contextual Info: TOSHIBA TLCS-470 Series TMP47C430 CMOS 4 -B it M icrocontroller The 47C430 is based on the TLCS-470 CMOS series. The 47C430 have on-screen display circuit OSD to display char­ acters and marks which indicate channel or time on TV screen, A/D converter (comparator) input, and D/A converter output

low power and area efficient carry select adder v

Abstract: IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom
Contextual Info: MVA60000 MVA60000 Series 1.4 Micron CMOS MEGACELL ASICs DS5499 ISSUE 3.1 March 1991 GENERAL DESCRIPTION Very large scale integrated circuits, requiring large RAM and ROM blocks, often do not suit even high complexity gate arrays, such as Zarlink Semiconductors' CLA60000 series.

TTL 7466

Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY
Contextual Info: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs

Contextual Info: Mr ? ma SI GEC PLESSEY MARCH 1993 S E M I C O N D U C T O R S DS3697-2.0 CLR70000 1.0n 0.8|i L eff CMOS GATE ARRAYS F E A TU R E S • 1.0(1 (0.8|i Leff) twin well, epitaxial CMOS process ■ Architecture optimised for Quad Flat Packs ■ New peripheral design employing

T157WG

Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
Contextual Info: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and

BDT01

Abstract: TMP47C834AN CS-1110 TV DIGITAL DECORDER CIRCUIT DIAGRAM
Contextual Info: TO SHIBA TMP47C834 CMOS 4-BIT MICROCONTROLLER TM P47C834N TM P47C834F The 47C834 are based on the TLCS-470 CMOS series. The 47C834 have on-screen display circuit to display characters and marks which indicate channel or time on TV screen, A/D converter comparator input, and D/A

1F87

Abstract: 1F8A 1f88 1F85 1F90 TMP88PH40M 1FB5 1f91 002BFH 1f94
Contextual Info: TOSHIBA Under Development TMP88CH40 CMOS 8-Bit Microcontroller TMP88CH40N/M The TMP88CH40N/M are the high-speed and high-function 8-bit single-chip microcomputer which incorporates the TLCS-870/X Series CPU core, as well as a sine wave drive PMD Programmable Motor