TRIMMER CAPACITOR 82 PF Search Results

RTW28-5R4C

Abstract: RTW50 RSEL-2002 RTW24-6R3C rtw24-13rh marking DIODE 2U 04 RSEL-2003W RSEL-2003 cold starting 100W150W
Contextual Info:  RTW SERIES ks Unit type power supply 5 その他 医 療 計 測 F A 半導体 DENAN その他 Built to meet ph UL60950-1/ CSA C22.2 No.60950-1 その他 • Features コンピュータ pf-a hk-a hws EN60950-1/ EN50178 通 信 F A 半導体 ●W

capacitor

Abstract: 275 v 593 BC varistor VARISTOR NTC 33 VARISTOR NTC 120 2322 156 226 smd capacitor capacitor mkt 344 CAPACITOR SMD ceramic capacitor 2222 655 2222
Contextual Info: Series A C D F K L M AC ACR 026/027 AHH-ELB 042/043 AHS-ELB 042/043 AHT 118 AHT-DIN 119 ALL-DIN 132/133 AMH-ELB 042/043 AML 138 AMR 024/025 AMS-ELB 042/043 AS 030/031 ASD 117 ASH 041/042/043 ASM 021 ASR 022/023 ATC 120 CAS CBB 0207 CHS CJS CLH 140 CLL 139

10 16s capacitor smd

Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Contextual Info: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbSS^l D 003^3^4 b37 BLW78 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB or B operated mobile, industrial and m ilitary transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to

3fc transistor

Abstract: TP2300
Contextual Info: 15E 0 § b3b?Z54 MOTOROLA SC MOTOROLA GDàf l^GÌ XSTRS/R T- 33- 0 | F SEMICONDUCTOR TECHNICAL DATA TP2300 The RF Line VHF Power Transistor The TP2300 is designed for use in 12.5 V V H F amplifiers operating under C la ss A, B or C conditions, its construction w hich incorporates go ld metallization and diffused ballast resistors

BLW 82

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

BY206

Abstract: BLW78 1206 resistor MGP560 mica trimmer capacitor polyester capacitor BR 8 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.

Contextual Info: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

trimmer frequency set

Abstract: 3 pins trimmer capacitor pin configuration 3 pins trimmer capacitor
Contextual Info: 19-2472; Rev 0; 12/07 MAX4990 Evaluation Kit The MAX4990 evaluation kit EV kit provides a proven design to evaluate the MAX4990 high-voltage, ±15kV ESD-protected electroluminescent lamp driver. Alligator clip leads contact a wide variety of standard electroluminescent lamps.

58W SOT

Abstract: BLW85 ZL18
Contextual Info: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

Philips polystyrene capacitor

Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
Contextual Info: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

transistor c32

Abstract: TRANSISTOR CATALOGUE itt 2222 BLF348 Philips 809 08003 ITT 2222 A IEC134
Contextual Info: b b5 3 ^ 31 Philips S em iconductors 0030055 T 2 7 I B APX Product specification VHF linear push-pull power MOS transistor BLF348 N AMER PHILIPS/DISCRETE t'ÎE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

2222 031 capacitor philips

Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
Contextual Info: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

RTW Series

Abstract: RSEL-2003 RTW05-10RC RTW300W RS 262-337 20KVA TDK 300W rtw24-13rh
Contextual Info: 1 RTW SERIES Unit type power supply 5 DENAN Built to meet UL60950-1/ CSA C22.2 No.60950-1 • Features ● Worldwide-applicable input, super-slim type 1U/2U rack size ● Meeting the standard of the harmonics current limiter EN61000-3-2 ● Approved by safety standards (UL, C-UL, TÜV),

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

AN028

Abstract: C103 C106 CC1050 CT52 18p06 Capacitor Tantal c104 capacitor 5n606
Contextual Info: User Manual Rev. 2.0 CC1050DK Development Kit SWRU053 Page 1 of 20 Table of contents INTRODUCTION . 3 EVALUATION BOARD . 4

BLF348

Abstract: MGP231 VHF transmitter circuit atc 17-33 RF push pull power amplifier vhf linear amplifier MGP232 BFL348
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF348 VHF linear push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor FEATURES BLF348 PIN CONFIGURATION • High power gain

transistor tt 2222

Abstract: smd 809 x transistor transistor SMD S33
Contextual Info: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

Philips polystyrene capacitors

Abstract: wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D
Contextual Info: bSE D B 7110fl2b QDb32b3 T3L H P H I N BLW76 PHILIPS IN T E R N A T I O N A L y v H.F./V.H.F. POW ER T R A N SIST O R N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

smd transistor e7

Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls
Contextual Info: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­