TRANSPACK TRANSISTOR Search Results

SGS30DA070D

Abstract: 57558 SGS30DA060D 19002D SGS30DA060 SGS30D
Contextual Info: S G S-THOilSON D7E D I TRANSPACK NPN POWER DARLINGTON 19001 m o dule APPLICATIONS: 7^237 These products are silicon NPN power dariingtons for industrial switching applications with three-phase mains operation. FAST FREEWHEEL DIODE ISOLATED POWER MODULE 30KVA - 375W

SGS15DB070D

Abstract: sc0039 HALF BRIDGE NPN DARLINGTON POWER MODULE sgsI5 Diode D7E SGS15DB080D sgs15d
Contextual Info: S G S-THONSON 07E D | 7=15=1237 QOlñTSb b 73C 1 8 9 8 5 u TRANSPACK NPN POWER A SG St5 D B 0 7 0 Îl DARLINGTON SGS15DB080D MODULE APPLICATIONS: These products are silicon NPN power dariingtons in half bridge configuration for industrial switching applications with three-phase mains operation.

Contextual Info: r= 7 S C S -T H O M S O N M « I[L [I * ( M Û ( g S SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • ^DSS 500 V ^DS(on 0.20 0 *D 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE

SGS100MA010D1

Abstract: S100M schematic diagram reverse forward motor
Contextual Info: SGS-THOMSON SG S100M A010D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS ^D S on SGS100MA010D1 100 V 0.014 a • • • • • Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL INDUSTRIAL APPLICATIONS:

SGS100MA010D1

Abstract: SGS100M
Contextual Info: r z T S G S -T H O M S O N ^ 7 # M g(M>i[L[I(g¥[RMO(gS S G S 10 0 M A 0 10 D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS100MA010D1 • • • • • VDss 100 V R DS(on 0.014 fi Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING

schematic diagram reverse forward motor

Abstract: transpac
Contextual Info: / S O^DMitLKgirMDgi T S G S -T H O M S O N SGS150MA01OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS on SGS150MA010D1 100 V 0.009 Si • • • • • 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL

Contextual Info: rZ 7 S G S -T H O M S O N SGS35MA050D1 *J W „ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS on SGS35MA050D1 500 V 0.16 • • • • • fi 35 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL

SGS150MA010D1

Contextual Info: f Z 7 SGS-THOMSON ^7# RilD g»[l[Lll(gT»R(10(gi SGS150MA010D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSs SGS150MA010D1 100 V • • • • • RDS(on 0.009 n 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE

SGS30MA050D1

Contextual Info: SGS-THOMSON ^ 7 # M g[M i[L[I(gra(Q)Rl(gS SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS(on) SGS30MA050D1 500 V 0.20 • • • • • U 30 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL

Contextual Info: 3DE P • 7^ 5 3 7 OQgqflqi S G S -T H O M S O N I Li(g?GMO(gS 4 ■ n _ r 3 <ì - i S s~ T ì ^ hoMSo n — SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • VDSS 500 V ^DS(on 0.20 ß 30 A ISOLATED POWERMOS MODULE

SGS35MA050D1

Abstract: SGS35M
Contextual Info: Æ 7 SGS-TtiOMSON * 7 Æ U HD ^ IlLi©Tr^®RDD©S SGS35MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS35MA050D1 • • • • • VDSS 500 V ^DS on •d 0.16 Q 35 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE

Contextual Info: 3QE D B 7^2^537 OOSW? S • ^ T "3 » C |-j5 S G S -T H O M S O N ^ ^ thomson EL[i gTO10(gS_ S G S 3 5 M A 0 5 0 D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS35MA050D1 • • • • • V qss 500 V f*DS(on 0.16 Q Id 35 A

Contextual Info: 30E D H V 'të 'ïE B ? S G S -T H O M S O N I!Li TnS IRÖO©S G Q E '^ O 'Ì fl • - ' p 3 0 [_ ] 5 s 6 ^ TH0MS0N S G S 1 5 0 M A 0 1 OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V qss ^DS on SGS150MA010D1 100 V 0.009 • • •

SGS100MA010D1

Contextual Info: . 3DE » • 7 Ej g ci S 3 7 005^03 S G S -T H O M S O N ^ A T#n, M ^© H [Li gTO i3n(gi s - m i ^ i r S G S 1 OOMAQ1OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V dss SGS100MA010D1 100 V • • • • • ^DSfon 0.014 G 120 A ISOLATED POWERMOS MODULE

Contextual Info: F s 3 DE D I S C S TH O M S O N ¡[LBgïïËMDes 6 s • 7^2^237 0 0 3 Q S C12 T ■ ' TSD20N1 OOF TSD20N100V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE - thomson _ TENTATIVE DATA TYPE TSD20N100F/V . . ■ . ■ V dss RDS on 1000 V 0.5 n

schematic diagram UPS

Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Contextual Info: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS

TSD40N50DV

Abstract: aval d 317 transistor
Contextual Info: BQE D m 7eia,i237_Qa3as'-iti ? • ■ TSD40N50DF TSD40N50DV SGS-THOMSON üLiOTTiOiöOi s N - CHANNEL ENHANCEMENT MODE _ FREDFET MODULE S-THOMSON g TENTATIVE DATA TY P E V dss RüS on Id TS D 40N 50D F/D V 500 V 0.12 £2 40 A . POWER MOS TRANSISTOR MODULE WITH

transistor c1237

Abstract: TSD250N05V
Contextual Info: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250

SGS80DA020D

Abstract: SGS80DA020 C180M 0809 al 9120 mosfet SGS80D
Contextual Info: 30E D • 7^2^237 003GbflG 7 HI r^Z SGS-THOMSON ^ 7 # ¡ILi^BMDOt B T T ' | ’3 3 SGS80DA020D s -t h o m s o n NPN DARLINGTON POWER MODULE - ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

SD 1496 transistor

Abstract: TSD2M350F
Contextual Info: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE

Contextual Info: 3DE D H Z ! B TESTES? D Q 3 D 7S D 2 • ._ ^ 1 S G S - T H O M S O N A 7 I [»^ [¡[LICTliMDOS s 6 - IRFK6H350 N - CHANNEL ENHANCEMENT MODE - POWER MOS TRANSISTOR MODULE S - T H OM S ON ADVANCE DATA TYPE IR FK6H 350 V dss RDS on

NPN DARLINGTON POWER MODULE

Abstract: SGS50DB040D 9120 mosfet SGS50D
Contextual Info: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE

SGS50DA045D

Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
Contextual Info: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

BUF298F

Abstract: BUF298V 3641B
Contextual Info: 3QE rz 7 ^ 7# D • QÜ3D33Ô 7 S C S -T H O M S O N K œ iL lû lM K S s G S TH0MS0N 3 U F 2 9 8 F BUF298V 'T -'S s^S NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE 2500V RMS