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    TRANSISTORS FOR POWER Search Results

    TRANSISTORS FOR POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy

    TRANSISTORS FOR POWER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor

    Abstract: audio amplifier POWER TRANSISTORS Transistors Transistor Arrays FILE TRANSISTOR horizontal transistor
    Contextual Info: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors


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    audio power amplifiers with transistors

    Abstract: 5-phase stepper driver
    Contextual Info: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14


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    power transistors cross reference

    Abstract: TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492
    Contextual Info: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave


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    SD1448 SD4011 SD1489 SD1492 SD4100 TSD4200 TCC596 SD1439 TCC597 SD1449 power transistors cross reference TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492 PDF

    cfl low loss drive

    Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
    Contextual Info: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer


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    vol92 OT186A O220AB OT428) cfl low loss drive phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT PDF

    IMD10A

    Abstract: T108
    Contextual Info: IMD10A Transistors Power management dual digital transistors IMD10A zFeatures 1) Two digital transistors in a SMT package. 2) Up to 500mA can be driver. 3) Low VCE (sat) of driver transistors for low power dissipation. zCircuit diagram (4) (5) zAbsolute maximum ratings (Ta=25°C)


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    IMD10A 500mA IMD10A T108 PDF

    Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 MJD41C/D PDF

    A 673 C2 transistor

    Abstract: tip41 369D-01
    Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 AEC-Q101 MJD41C/D A 673 C2 transistor 369D-01 PDF

    SD2904

    Abstract: SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903
    Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &


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    SD2900 SD2902 SD2903 SD4013 SD1470 SD1463 AM80610-030 SD2904 SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903 PDF

    BD435

    Abstract: BD441
    Contextual Info: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


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    BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441 PDF

    transistor 2SA1216

    Abstract: transistor 2SC4467 2sc2837 sap16p
    Contextual Info: Power Transistors 2-1 2-1-1 Transistors for Audio Amplifiers •Complementary Transistors for Output Pc Ic VCEO W (A) (V) 30 50 60 75 80 85 100 125 130 150 200 6 80 6 110 Chip Single Transistor General 2SA1725 Package Darlington LAPT 2SC4511 2SA1726 TO-220F


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    2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 transistor 2SA1216 transistor 2SC4467 2sc2837 sap16p PDF

    M111

    Abstract: M130 M164 SD1455 SD1456 SD1458 SD1459 SD1476 TCC3100
    Contextual Info: SILICON POWER TRANSISTORS VHF TV/LINEAR TRANSISTORS SGS-THOMSON VHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed to assure maximum system availability and ruggedness.


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    SD1476 SD1458 SD1455 SD1459 SD1456 TCC3100 M111 M130 M164 SD1455 SD1456 SD1458 SD1459 SD1476 TCC3100 PDF

    Contextual Info: _ N AUER PHILIPS/DISCRETE • bbS3T31 0015bfit. 3 OLE D ' = BCX54 BCX55 BCX56 7 V T-XW l SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages


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    bbS3T31 0015bfit. BCX54 BCX55 BCX56 T-29-23 -3CX54 PDF

    mje3055

    Abstract: MJE305 mje3055 127 case data
    Contextual Info: MJD2955, NJVMJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS


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    MJD2955, NJVMJD2955T4G MJD3055, NJVMJD3055T4G MJE2955 MJE3055 MJD2955/D MJE305 mje3055 127 case data PDF

    Contextual Info: 0 0 2 4 ^ 1T3 « A P X N AMER PHILIPS/DISCRETE BCX54 BCX55 BCX56 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages


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    BCX54 BCX55 BCX56 BCX51, BCX52 BCX53 LibS3T31 PDF

    Contextual Info: • BCP54 BCP55 BCP56 b b Sa ^ a i 0Q245B1 fllT HIAPX N AflER PHILIPS/DISCRETE b7E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power npn transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. They are general purpose transistors, primarily designed for audio amplifier output


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    BCP54 BCP55 BCP56 0Q245B1 BCP51, BCP52 BCP53 PDF

    221D

    Abstract: MJF44H11 MJF44H11G MJF45H11 MJF45H11G DSA002840
    Contextual Info: MJF44H11 NPN , MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http://onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in


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    MJF44H11 MJF45H11 MJF44H11/D 221D MJF44H11 MJF44H11G MJF45H11 MJF45H11G DSA002840 PDF

    1N5825

    Abstract: 2N6497 MSD6100
    Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS


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    2N6497 r14525 2N6497/D 1N5825 2N6497 MSD6100 PDF

    Contextual Info: NXP power LDMOS transistors BLF7G24LS-100 and BLF7G24LS-140 RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Designed for LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPDfriendly transistors cover the entire frequency range of 2.3 to 2.4 GHz. They enable asymmetrical


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    BLF7G24LS-100 BLF7G24LS-140 BLF7G24LS-100 BLF7G24LS-140 PDF

    2N5192G

    Contextual Info: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G 2N5192G PDF

    Contextual Info: _/V_ BDV92 BDV94 BDV96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.


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    BDV92 BDV94 BDV96 OT-93 BDV91, BDV93 BDV95. PDF

    IMD16A

    Abstract: T108 052 marking code digital transistor ROHM D16 marking code transistor SMT6 T108
    Contextual Info: IMD16A Transistors Power management dual digital transistors IMD16A (1) (2) 0.95 0.95 1.9 2.9 (3) (4) (5) 0.3 (6) !External dimensions (Unit : mm) !Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power


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    IMD16A 500mA SC-74 100MHz IMD16A T108 052 marking code digital transistor ROHM D16 marking code transistor SMT6 T108 PDF

    IMD16A

    Abstract: T108
    Contextual Info: IMD16A Transistors Power management dual digital transistors IMD16A (1) (2) 0.95 0.95 1.9 2.9 (3) (4) (5) 0.3 (6) zExternal dimensions (Unit : mm) zFeatures 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power


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    IMD16A 500mA SC-74 IMD16A T108 PDF

    Contextual Info: NXP power LDMOS transistors BLF7G27LS-100 and BLF7G27LS-140 RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applications Designed for W-CDMA/LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPD-friendly transistors cover the entire frequency range from 2.5 to 2.7 GHz. They enable


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    BLF7G27LS-100 BLF7G27LS-140 BLF7G27LS-100 BLF7G27LS-140 PDF

    TIP31 PNP Transistor

    Abstract: TIP31 NPN Transistor diagram 1N5825 MJD31 MJD31C MJD31CRL MJD32 MJD32C MSD6100 TIP31
    Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    MJD31, MJD31C MJD32, MJD32C MJD31C MJD32C TIP31 TIP32 r14525 MJD31/D TIP31 PNP Transistor TIP31 NPN Transistor diagram 1N5825 MJD31 MJD31CRL MJD32 MSD6100 PDF