TRANSISTORS FOR POWER Search Results

cfl low loss drive

Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
Contextual Info: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer

Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

A 673 C2 transistor

Abstract: tip41 369D-01
Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

BD435

Abstract: BD441
Contextual Info: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON

Contextual Info: _ N AUER PHILIPS/DISCRETE • bbS3T31 0015bfit. 3 OLE D ' = BCX54 BCX55 BCX56 7 V T-XW l SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

mje3055

Abstract: MJE305 mje3055 127 case data
Contextual Info: MJD2955, NJVMJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS

rf power transistors

Abstract: SOT539A SOT113 SOT1130A SOT1121A SOT922-1 SOT1135A sot1244c SOT1110B
Contextual Info: Ceramic packages for RF Power Transistors 1 SOT467B SOT467C SOT1135B SOT1135C SOT1130A SOT1130B SOT1135A SOT1135D SOT1120A SOT1120B SOT1121A SOT1121B SOT1121C SOT1121D SOT1112A SOT1112B Ceramic packages for RF Power Transistors (2) SOT1110A SOT1110B SOT1117A

221D

Abstract: MJF44H11 MJF44H11G MJF45H11 MJF45H11G DSA002840
Contextual Info: MJF44H11 NPN , MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http://onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

Contextual Info: NXP power LDMOS transistors BLF7G24LS-100 and BLF7G24LS-140 RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Designed for LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPDfriendly transistors cover the entire frequency range of 2.3 to 2.4 GHz. They enable asymmetrical

IMD16A

Abstract: T108 052 marking code digital transistor ROHM D16 marking code transistor SMT6 T108
Contextual Info: IMD16A Transistors Power management dual digital transistors IMD16A (1) (2) 0.95 0.95 1.9 2.9 (3) (4) (5) 0.3 (6) !External dimensions (Unit : mm) !Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power

Contextual Info: NXP power LDMOS transistors BLF7G27LS-100 and BLF7G27LS-140 RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applications Designed for W-CDMA/LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPD-friendly transistors cover the entire frequency range from 2.5 to 2.7 GHz. They enable

TIP31 PNP Transistor

Abstract: TIP31 NPN Transistor diagram 1N5825 MJD31 MJD31C MJD31CRL MJD32 MJD32C MSD6100 TIP31
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

1N5825

Abstract: 369D MJD31 MJD31C MJD32 MJD32C TIP31 TIP32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS

RF Transistors

Abstract: tv rf section temic Tv tuner temic mosfet
Contextual Info: Tem ic S e m i c o n d u c t o r s Transistors Whether you need RF, bipolar, power, or lowpower transistors, TEMIC Semiconductors has a device for your application that’s backed with a long tradition of technological innovation. Applications Our RF transistors include devices for tuner pre­

BC847

Abstract: BC847CDXV6T1 BC847CDXV6T1G BC847CDXV6T5G BC848 BC848CDXV6T1 BC848CDXV6T1G
Contextual Info: BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.

MFE3020

Abstract: MFE3021
Contextual Info: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C| MOS Field-Effect Transistors de­ signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —

Contextual Info: N AMER PHILIPS/DISCRETE bt.S3^31 D02Tb33 D32 BLX94A BLX94C b^E D J BLX94A IS MAINTENANCE TYPE IAPX U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable for transmitting applications in class-A, B or C in the u.h.f. range for a nominal supply voltage up to 28 V. The transistors are resistance stabilized and tested

k55 transistor

Abstract: BC856 BC856AWT1 BC856BWT1 BC857 BC857AWT1 BC857BWT1 BC858 BC858AWT1 BC858BWT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. 3 COLLECTOR

BC848T

Abstract: BC846-40 BC847B BC848C BC846 BC846AWT1 BC846BWT1 BC847 BC847AWT1 BC847CWT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. BC846AWT1,BWT1

Contextual Info: BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.

BC847

Abstract: BC847CDXV6T1 BC847CDXV6T5 BC848 BC848CDXV6T1 BC848CDXV6T5
Contextual Info: BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications.

D44VH

Abstract: D44VH10 D45VH D45VH10
Contextual Info: ON Semiconductor NPN D44VH Complementary Silicon Power Transistors PNP D45VH These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers

BC847CDXV6T1G

Abstract: BC847 BC847CDXV6T1 BC847CDXV6T5 BC847CDXV6T5G BC848 BC848CDXV6T1 BC848CDXV6T1G BC848CDXV6T5 dual BC847
Contextual Info: BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.