PDTA143
Abstract: PDTC143TU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143T series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;
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smd TRANSISTOR code marking 36
Abstract: PDTA143 PDTC143TU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143T series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;
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TRANSISTOR SMD MARKING CODE UA
Abstract: 2003 SMD IC marking code 33 SMD ic smd transistor bcp53 MARKING SMD PNP TRANSISTOR R 172 bcp53 SMD transistor MARKING SMD PNP TRANSISTOR medium power transistors SMD IC marking 115 MARKING SMD PNP TRANSISTOR R
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP51; BCP52; BCP53 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53
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m3d087bcp51bcp52bcp53+13ot223bcp54bcp55transistor smd marking code ua2003 smd icmarking code 33 smd icsmd transistor bcp53marking smd pnp transistor r 172bcp53 smd transistormarking smd pnp transistormedium power transistorssmd ic marking 115marking smd pnp transistor r
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TRANSISTOR SMD MARKING CODE 3d
Abstract: MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 2002 Feb 04 2003 Apr 09 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858
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m3d088bc856bc857bc858+15bc846bc847bc848bc856abc856btransistor smd marking code 3dmarking 25 smd pnp transistortransistor smd marking code nvsmd marking 3d npntransistor smd marking code 3fsmd transistor t4smd transistor a1 sot23transistor smd marking code a1smd marking code 3dsmd marking rs
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NPN medium power transistor in a smd
Abstract: TRANSISTOR SMD MARKING CODE 9339 TRANSISTOR SMD MARKING CODE R 73 bcp56 Transistor SMD marking code NV bcp55 smd transistors smd code marking LP Philips marking code sot223 BCP56-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP54; BCP55; BCP56 NPN medium power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56
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m3d087bcp54bcp55bcp56+11ot223bcp51bcp52npn medium power transistor in a smdtransistor smd marking code 9339transistor smd marking code r 73transistor smd marking code nvsmd transistorssmd code marking lpphilips marking code sot223bcp56-16
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Contextual Info: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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induction heating ic
Abstract: SGL60N90DG3YD induction heating saturation
Contextual Info: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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sgl60n90dg3o-264sgl60n90dg3tusgl60n90dg3m1tu+4sgl60n90dg3ydtuinduction heating icsgl60n90dg3ydinduction heating saturation
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Contextual Info: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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sgr15n40lsgu15n40lsgu15n40ltuo-251+1an-9006
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PDTC144WT
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144W series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ Product specification Supersedes data of 1999 May 25 2003 Apr 11 Philips Semiconductors Product specification PNP resistor-equipped transistors;
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PDTA144E
Abstract: TRANSISTOR SMD MARKING CODE spt marking A1 smt3 PNP transistor TRANSISTOR SMD MARKING CODE 42 Marking Code SMD transistors smd code marking LP marking PP16 code smd TRANSISTOR code marking e1 PDTA144ES PDTA144EE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144E series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 Apr 20 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;
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pdta144e01-may-99transistor smd marking code sptmarking a1 smt3 pnp transistor+7transistor smd marking code 42marking code smd transistorssmd code marking lpmarking pp16 codesmd transistor code marking e1pdta144espdta144ee
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transistor SMD t4
Abstract: PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;
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pdtc143xpdtc143xtpdtc143xetransistor smd t4+4marking code e2 p smd transistorpdta143pdta143xepdta143x
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PDTA143XE
Abstract: PDTC143XE PDTA143X smd code marking LP PDTA143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Mar 14 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;
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marking code E5 SMD ic
Abstract: smd transistor marking e5 TA114E Marking Code SMD transistors PDTA114E PDTC114ES smd code marking LP marking PP16 code transistor smd e5 TRANSISTOR SMD MARKING CODE spt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114E series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;
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pdta114e01-may-99marking code e5 smd icsmd transistor marking e5+7ta114emarking code smd transistorspdtc114essmd code marking lpmarking pp16 codetransistor smd e5transistor smd marking code spt
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MARKING SMD npn TRANSISTOR R
Abstract: TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 27 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;
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pdtc123jresistor-pdtc123jtpdtc123jefpdtc123je+4marking smd npn transistor rtransistor smd marking code 056pdta123jupdtc123ju
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TRANSISTOR SMD MARKING CODE DZ
Abstract: smd code marking LP marking PP16 code PDTA124XE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC124X series NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 18 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;
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pdtc124xpdtc124xefpdtc124xetransistor smd marking code dz+3smd code marking lpmarking pp16 codepdta124xe
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PDTC123ET
Abstract: PDTA123ET
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;
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IGBT cross-reference
Abstract: TO252-DPAK transistors cross reference list
Contextual Info: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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sgr15n40lsgu15n40lsgr15n40ltfo-252+5sgr15n40ltman-9006igbt cross-referenceto252-dpaktransistors cross reference list
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smd transistor marking DP
Abstract: PDTA143Z TRANSISTOR SMD MARKING CODE X D PDTC143ZU PDTA143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143Z series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 25 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;
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PDTC143EK
Abstract: PDTC143E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;
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AN9006
Contextual Info: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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IGBT cross-reference
Abstract: AN9006 IGBT application note IGBT Pspice SGR20N40LTF
Contextual Info: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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smd TRANSISTOR H2 MARKING CODE
Abstract: TRANSISTOR SMD catalog h2 SOT66x TRANSISTOR SMD MARKING CODE H2 marking code H2 free transistor and ic equivalent data PEMH1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH1 NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
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m3d744sc-75/sc-89ot66601-may-99+7smd transistor h2 marking codetransistor smd catalog h2sot66xtransistor smd marking code h2marking code h2free transistor and ic equivalent datapemh1
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IPS76SB10
Abstract: mgs225 TRANSISTOR REPLACEMENT GUIDE IPS76SB40 IPS76SB70 IPS79SB40 IPS79SB10 IPS76SB21 IPS79SB70 ips76
Contextual Info: PREFACE Dear Customer We are pleased to issue Philips Semiconductors’ ‘Small-Signal Transistors and Diodes’ handbook SC10. Features of this new fully-revised handbook: • ONE book for small-signal transistors and diodes SC10 supersedes SC01 and SC04
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bas216bas221bat254bzx284-c+12bzx284-bba792ips76sb10mgs225transistor replacement guideips76sb40ips76sb70ips79sb40ips79sb10ips76sb21ips79sb70ips76
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transistor databook
Contextual Info: GENERAL INFORMATION As a recognised world leader in the field of Power Transistors, SGS-THOMSON is strongly committed to producing state-of-the art Power Bipolar Transistors. These devices have been specifically developed to optimise price/performance ratio for the
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