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    SGR20N40LTM Search Results

    SGR20N40LTM Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SGR20N40LTM
    		Fairchild Semiconductor Discrete, IGBT Original PDF 151.51KB 5
    SF Impression Pixel

    SGR20N40LTM Price and Stock

    Fairchild Semiconductor Corporation

    Fairchild Semiconductor Corporation SGR20N40LTM

    Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics SGR20N40LTM 30 1
    • 1 -
    • 10 -
    • 100 $1.59
    • 1000 $1.32
    • 10000 $1.17
    		Buy Now

    SGR20N40LTM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IGBT cross-reference

    Abstract: AN9006 IGBT application note IGBT Pspice SGR20N40LTF
    Contextual Info: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		SGR20N40L SGU20N40L SGU20N40L SGU20N40LTU O-251 IGBT cross-reference AN9006 IGBT application note IGBT Pspice SGR20N40LTF PDF

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Contextual Info: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM PDF

    AN9006

    Contextual Info: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		SGR20N40L SGU20N40L O-252 SGR20N40LTF SGR20N40LTM AN9006 PDF