TRANSISTORS C 828 Search Results

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

Contextual Info: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.

TIP42 philips

Abstract: T1P42B
Contextual Info: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier

TIP42A

Abstract: TIP41 TIP42 TIP42B TIP42 amplifier TIP42 applications w826 ibm 1981 a-3131 A3131
Contextual Info: TIP42;A TIP42B;C SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in general ou tput stages o f am plifier circuits and switching applications. NPN complements are TIP41 series. Q UICK REFERENCE D A T A

eurosil clock

Abstract: EUROSIL ELECTRONIC GMBH
Contextual Info: TEMIC e5130 S e m i c o n d u c t o r s Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 15 tor the P-channel out­ put transistors and typ. 20 (13 ) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

MU4893

Abstract: MU4894 MU4891 MU4892 EB20 unijunction application note 100-C
Contextual Info: MU4891 silicon thru MU4894 SILICON A N N U LA R PLASTIC U N IJU N C TIO N TRANSISTORS PN UNIJUNCTION TRANSISTORS . . . designed for military and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast switching and low peak-point

eurosil clock

Abstract: eurosil EUROSIL ELECTRONIC GMBH Eurosil Electronic
Contextual Info: Tem ic e5130 S e m i c o n d u c t o r s Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 Q 15 Q tor the P-channel out­ put transistors and typ. 20 Q (13 Q) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To

EUROSIL ELECTRONIC GMBH

Abstract: eurosil clock eurosil IN4114 Eurosil Electronic eurosil e5130
Contextual Info: Tem ic e5130 S e m i c o n d u c t o r s Low Voltage CMOS Driver Circuit Description The e5130 contains 4 independent driver outputs with an ON resistance of typ. 25 Q 15 Q tor the P-channel out­ put transistors and typ. 20 Q (13 Q) for the N-channel output transistors; at a supply voltage of 1.5 V (3 V). To

C 4977

Abstract: ON 4977 4977 2n4979 4978 25CC 2N4978 C12SS 2n 834
Contextual Info: 2N 4977 2N 4978 2N 4979 FIELD-EFFECT TRANSISTORS, SILICON. N CHANNEL TRANSISTORS A EFFET DE CHAMP, SILIC IU M . C ANAL N • Fast switching Commutation rapide - Chopper Découpeur Case TO-18 50 mA 15 mA 7,5 mA min. min. min. 2N 4977 2N 4978 2N 4979 15 20 40

TIP41

Abstract: TIP42 TIP42B TIP42 applications TIP42 philips T3321
Contextual Info: TIP42;A TIP42B;C PHILIPS INTERNATIONAL 5bE D • 711GÖ2b □043534 Ofll « P H I N 'T'—3 3 ~ 2 I SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in general o u tp u t stages o f am plifier circuits and switching applications. NPN complements are TIP41 series.

R005 FZ

Abstract: transistors C 828 BF841 BF840 ic MARKING FZ
Contextual Info: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors M a y in g BF840 = NC BF841 = ND PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 2.6 1.4

CQ 4.000 crystal oscillator 4Mhz

Abstract: ztb 421 CQ 13.560 ctx128 ats 4.096 18pf CTX128 diode SE271 ZTB455E CSX750PCC 7213 time base generator ic
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 16-201 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 202-402 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 403-423

ctx128

Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

diode t85

Abstract: 2N7805 trf 510 transistor 2N2152 transistor 45 f 122 32N03 t85 diode 2N1073 TRF 840 2N2144A
Contextual Info: PNP HIGH POWER TRANSISTORS 7 | OODOOIS I>e | 2844352 27 co C D C D C D C O C D C O C D C O C O C D C D C O C O C O C O ''a C O C O C O C O C O C O C O C O C O C O C O C D C D C O C O C D C O C O C D C O O OOOOOOOOOOOOOOOOOOOOÇM I— I— I—I— I— I— i— I— I— I— I— I— 1— 1— 1— I— I— f- I— 1— >“

Contextual Info: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N

3N171

Abstract: VN10MA C 828
Contextual Info: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device

3N170

Abstract: 3N170-71 3N171 X3N170-71
Contextual Info: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATU RES H AND LING P R E C A U TIO N S • • • • M O S field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible dam age to the device

Contextual Info: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the

BT 816 transistor

Abstract: transistor bt 808 BT 815 transistor 2SD807 BT 812
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC799

Abstract: transistor 2sa564 2sa564 transistor 2SA564 25X1 2SA539
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC828

Abstract: 2SC828 R transistor 2sc828 2SC828A 2sc828 transistor 2SC828A S transistor 2sc828 data sheet 2SC828 R S 2SC828A R 2SC828 S
Contextual Info: ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations.

TRANSISTOR 2sc828

Abstract: 2SC828 2sc828 transistor OF TRANSISTOR 2SC828 2sc828 equivalent 2SC828A C 828A TRANSISTOR transistor 2sc828 data sheet 2SC828 pin configuration 2sc828 q
Contextual Info: ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manufactured in different pin configurations.