TRANSISTORS A 1757 Search Results

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

2SA1906

Abstract: 2SC5103 2sa1757 transistor 2sa1952 2SC4596 transistor 2SA data book 2SA1757 2sa190 10C1 966-03
Contextual Info: 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 Transistors I High-speed Switching Transistor 2 SA 1952 / 2 SA 1906 / 2 SA 1757 •F e a tu re s • A b s o l u t e m a x im u m ra tin g s T o = 2 5 'C > 1 High speed switching (tf : Typ. 0 .1 5 > * s at l c = — 3A)

BS107 spice

Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Contextual Info: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT

Contextual Info: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication astothe capabilities of a particular product. It is also useful for the purpose of

2907a

Abstract: 2907 A2907 a 2907 BT2907A NPN transistors sot-23 26
Contextual Info: SIEMENS PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration

BUK553-100A

Contextual Info: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication as to the capabilities of a particular product. It is also useful for the purpose of

BUK553-100A

Contextual Info: Philips Semiconductors Understanding the Data Sheet PowerMOS Transistors usually given as either 150 "C or 175 "C. It is not recommended that the internal device temperature be allowed to exceed this figure. All manufacturers of power MOSFETs provide a data

Contextual Info: 2S D 1 8 9 7 Transistors I 2SD 1757K Power Transistor 100V, 5A 2SD1897 •F e a tu re s 1 ) •A b s o lu te maximum ratings (T a = 25Ì5) L o w V c E ( sa t). ( T y p — 0 .3 V a t lc /lB= 3 / 0 .3 A ) 2 ) E x c e l l e n t Fi f e c u r r e n t c h a r a c t e r i s t i c s .

b0333

Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J

2SD1897

Abstract: 768d SIT1552AI-JF-DCC-32.768D
Contextual Info: 2SD1897 2SD1757K Transistors I Power Transistor 100V, 5A 2SD1897 •F e a tu re s 1 ) Low V c e is a t) . (Typ.— 0 . 3 V at lc/le=3/0.3A) 2 ) Excellent H f e current characteristics. 3 ) Pc“ 30 W. (Tc=s25'sC) •A b s o lu te maximum ratings (T a = 2 5 ‘C 5

diode 1BL

Abstract: NDS356P
Contextual Info: March 1996 Na t i o n a l Semiconductor ” NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor F eatu re s • -1.1 A, -20V. RDS 0N1 = 0.3Q @ VGS = -4.5V. G en eral D e sc rip tio n These P-Channe! logic level enhancement mode power field effect transistors are produced using

a 1757 transistor

Abstract: A 1952 transistors a 1757 transistor 2SA 2SC5103 transistors 2SA rohm 2sa 1757 EM 5103
Contextual Info: 2S A 1 952 / 2 S A 1 906 / 2S A 1 757 Transistors I 2 S C 5 1 03 / 2 S C 45 96 High-speed Switching Transistor 2 S A 1 952 / 2 S A 1 906 / 2 S A 1 757 •A b s o lu te maximum ratings Ta—2813 •F e a tu re s 1) 2) 3) 4) High speed sw itching (tf ! Typ. 0 A 5 ^ s at l c = —3A )

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

2SA911

Abstract: 2sc1751 2SA861 2SA1033 138D 2N6426 MPSA43 MP6A42 2sa872 transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sk1757

Abstract: 2SK1756 TC-2427
Contextual Info: DATA SHEET NEC i 2SK1756/2SK1757 MOS FIELD EFFECT POWER TRANSISTORS SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2 S K 1 7 5 6 /2 S K 1 7 5 7 is N -c h a n n el M O S Field Effect T ra n ­ PACKAGE DIMENSIONS in millimeters sis to r d esig n e d fo r high v o lta g e s w itch in g ap p lica tio n s.

BDY92

Abstract: 1117 ADC Gain bandwidth BDY90 BDY90 BDY91
Contextual Info: 01 3875081 G E S OL ID DE 1 3fl7S0fll 0G17S71 3 STATE Pro Electron Pow er Transistors .— 0 IE 17571' D T~ 2?~f - » 6DY90, BDY91, BDY92

c303 diode

Abstract: 5N35 SEFM4N45
Contextual Info: S G S-TH0NS0N D?E 73 C 17579 SEFM4N45/SEFP4N45 SEFM5N35/SEFP5N3S SEFM5N40/SEFP5N40 7 eI2 t1237 QOlâQflS 4 D | D ~ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

3N35

Abstract: Diode D7E 2N45 SEFM2N45
Contextual Info: S G S-THOMSON D7E D 73C 17571 D ! . 'i SEFH2H45/SEFP2N45 SEFM3N33/SEFP3N35 s : SEFM3N40/SEFP3N40 7‘iEclS37 D01flQ74 h t HIGH SPEED SW ITCHIN G APPLICATIONS Iq m Ptot ^stg Ti - f R D S (ON •d 350/400V 3.3 Q 3 A Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K f l)

BFT198

Abstract: BFT19B BFT19 BFT19A
Contextual Info: G E SOLID STATE 3875081 G E SOLID Dl □1 STATE de DE | g 3Ô7SDÛ1 DD17S75 D 01E 17575 DT^ i ; - / 7 Pro Electron Power BFT19, BFT19A, BFT19B

Supercool

Abstract: peltier SI2305 TEC H bridge PWM Regulator peltier wheatstone bridge ntc 10k 10% D5 CDRH6D28 a 1757 transistor MAX4122
Contextual Info: Maxim/Dallas > App Notes > FIBER-OPTIC CIRCUITS SENSOR SIGNAL CONDITIONERS TEMPERATURE SENSORS and THERMAL MANAGEMENT Keywords: PWM, temperature controller, thermoelectric cooler, TEC Sep 27, 2002 APPLICATION NOTE 1757 HFAN-08.2.1: PWM Temperature Controller for Thermoelectric

Wheatstone Bridge amplifier

Abstract: Si2306 CDRH6D28 MAX1637 MAX4122 MAX4250 MAX6012 MAX6326XR31 Si2305 wheatstone bridge
Contextual Info: Maxim > App Notes > Optoelectronics Sensor Signal Conditioners Temperature Sensors and Thermal Management Keywords: PWM, temperature controller, thermoelectric cooler, TEC Feb 26, 2003 APPLICATION NOTE 1757 HFAN-08.2.1: PWM Temperature Controller for Thermoelectric

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

a 1757 transistor

Abstract: ti 8ak JIS G3141 2SC1755 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo
Contextual Info: SANYO SEMICONDUCTOR 1EE CORP D I 7^707^ □ □ □ 4 1 4 5 5 | T - Z Z - O V 1756 , 1757 2010A 2013 2012 NPN Triple Diffused Planar Silico n Transistors TV Chroma Output, Video Output, Sound Output Applications 4290 These 2SC1755,1756,1757 are different only from their packages.

Contextual Info: T h e rm a l Stability a n d R adia tion I Transistor C irc u ii Suppose that the dissipation applied to the junction is Pc and that a variation o f APc was produced in this dissipation by some cause. T here appears a tem perature change of A Pc0ja in the junction. 0ja : therm al resis­