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    SI2305 Search Results

    SI2305 Datasheets (18)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2305A
    UMW 20V 4.2A 65MR@4.5V,4.2A 1.38W 50 Original PDF 404.73KB 5
    SI2305ADS-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 5.4A SOT23-3 Original PDF 10
    SI2305ADS-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 5.4A SOT23-3 Original PDF 10
    SI2305BHE3-TP
    Micro Commercial P-CHANNEL MOSFET,SOT-23 Original PDF 1.06MB 4
    SI2305B-TP
    Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF 474.43KB
    SI2305CDS-T1-BE3
    Vishay Siliconix P-CHANNEL 8-V (D-S) MOSFET Original PDF 233.34KB 10
    SI2305CDS-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 5.8A SOT23-3 Original PDF 10
    Si2305DS
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SI2305DS
    Vishay Telefunken P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF 51.88KB 4
    Si2305DS-E3
    Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 Original PDF 93.31KB 5
    Si2305DS SPICE Device Model
    Vishay P-Channel 1.25-W, 1.8-V (G-S) MOSFET Original PDF 47.36KB 3
    Si2305DS-T1
    Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 T/R Original PDF 93.31KB 5
    Si2305DS-T1-E3
    Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 T/R Original PDF 93.31KB 5
    SI2305DS-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3.5A SOT23-3 Original PDF 8
    SI2305DS-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3.5A SOT23-3 Original PDF 8
    SI2305DS-TI-E3
    Vishay Transistor Mosfet P-CH 8V 3.5A 3TO-236 T/R Original PDF 93.31KB 5
    SI2305-TP
    Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL MOSFET, SOT-23 PACKAGE Original PDF 350.47KB
    SI2305-TP-HF
    Micro Commercial Interface Original PDF 1.37MB 4
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    SI2305 Price and Stock

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    Micro Commercial Components SI2305B-TP

    Trans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R
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    Verical () SI2305B-TP 399,000 3,000
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    SI2305B-TP 234,000 3,000
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    TME SI2305B-TP 1
    • 1 $0.39
    • 10 $0.26
    • 100 $0.15
    • 1000 $0.10
    • 10000 $0.09
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    Win Source Electronics SI2305B-TP 27,600
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    Vishay Intertechnologies SI2305CDS-T1-BE3

    Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R
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    Verical SI2305CDS-T1-BE3 3,000 3,000
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    Avnet Americas SI2305CDS-T1-BE3 Tape & Reel 6,000 19 Weeks 3,000
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    Mouser Electronics SI2305CDS-T1-BE3 21,439
    • 1 $0.62
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    Arrow Electronics SI2305CDS-T1-BE3 3,000 27 Weeks 3,000
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    Newark SI2305CDS-T1-BE3 Cut Tape 3,000 5
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    TTI SI2305CDS-T1-BE3 Reel 24,000 3,000
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    TME SI2305CDS-T1-BE3 3,000
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    EBV Elektronik SI2305CDS-T1-BE3 27 Weeks 3,000
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    Vishay Intertechnologies SI2305CDS-T1-GE3

    - Tape and Reel (Alt: SI2305CDS-T1-GE3)
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    Avnet Americas SI2305CDS-T1-GE3 Tape & Reel 30 Weeks, 5 Days 3,000
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    Mouser Electronics SI2305CDS-T1-GE3 1,334
    • 1 $0.62
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    Newark () SI2305CDS-T1-GE3 Tape & Reel 99,821 100
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    SI2305CDS-T1-GE3 Cut Tape 99,821 5
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    SI2305CDS-T1-GE3 Tape & Reel 11,540 10
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    SI2305CDS-T1-GE3 Cut Tape 11,540 1
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    SI2305CDS-T1-GE3 Tape & Reel 3,000
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    SI2305CDS-T1-GE3 Tape & Reel 3,000
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    TTI SI2305CDS-T1-GE3 Reel 3,000
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    Bristol Electronics () SI2305CDS-T1-GE3 13,342
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    SI2305CDS-T1-GE3 4,059 1
    • 1 $0.49
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    • 100 $0.25
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    Quest Components () SI2305CDS-T1-GE3 3,247
    • 1 $0.66
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    SI2305CDS-T1-GE3 2,440
    • 1 $0.50
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    • 100 $0.23
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    SI2305CDS-T1-GE3 2,270
    • 1 $2.60
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    • 1000 $0.97
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    SI2305CDS-T1-GE3 1,135
    • 1 $0.70
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    • 100 $0.32
    • 1000 $0.21
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    TME SI2305CDS-T1-GE3 8 1
    • 1 $0.56
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    • 100 $0.22
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    Chip 1 Exchange SI2305CDS-T1-GE3 2,506
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    Avnet Asia SI2305CDS-T1-GE3 15,000 54 Weeks 3,000
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    Component Electronics, Inc SI2305CDS-T1-GE3 570
    • 1 $3.08
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    EBV Elektronik SI2305CDS-T1-GE3 53 Weeks 3,000
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    Wuhan P&S SI2305CDS-T1-GE3 207,000 1
    • 1 $0.40
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    • 100 $0.16
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    Micro Commercial Components SI2305-TP

    MOSFETs P-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI2305-TP 977
    • 1 $0.65
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    • 100 $0.28
    • 1000 $0.18
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    Quest Components SI2305-TP 396
    • 1 $0.30
    • 10 $0.30
    • 100 $0.09
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    Vishay Siliconix SI2305DS-T1-E3

    MOSFET, POWER, P-CH, VDSS -8V, RDS(ON) 0.044OHM, ID +/-3.5A, TO-236 (SOT-23),PD 1.25W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI2305DS-T1-E3 Bulk 3,000
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    SI2305 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si2305DS-T1-E3

    Abstract: SI2305DS-T1 / A5 Si2305DS Si2305DS-T1
    Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT


    Original
    si2305dso-236ot-23si2305ds-t1+3si2305ds-t1-e308-apr-05si2305ds-t1 / a5 PDF

    Si2305ADS

    Abstract: Si2305ADS-T1-E3 SI2305ADS-T1-GE3
    Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si2305adso-236ot-23si2305ads-t1-e3+2si2305ads-t1-ge311-mar-11 PDF

    Si2305ADS

    Abstract: S-81021
    Contextual Info: SPICE Device Model Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si2305ads18-jul-08s-81021 PDF

    Contextual Info: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    si2305cdso-236ot-232002/95/ec+3si2305cds-t1-ge32011/65/eujs709a PDF

    Si2305DS-T1-E3

    Abstract: Si2305DS Si2305DS-T1
    Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 -8 0.071 at VGS = - 2.5 V ±3 0.108 at VGS = - 1.8 V ±2 • Halogen-free According to IEC 61249-2-21 Available


    Original
    si2305dso-236ot-23si2305ds-t1+3si2305ds-t1-e3si2305ds-t1-ge311-mar-11 PDF

    Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 -8 0.071 at VGS = - 2.5 V ±3 0.108 at VGS = - 1.8 V ±2 • Halogen-free According to IEC 61249-2-21 Available


    Original
    si2305dso-236ot-23si2305ds-t1+4si2305ds-t1-e3si2305ds-t1-ge32011/65/eu2002/95/ec PDF

    SI2305ADS-T1

    Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si2305adso-236ot-23si2305ads-t1-e3+5si2305ads-t1-ge370trademarks2011/65/eu2002/95/ecsi2305ads-t1 PDF

    82713

    Abstract: Si2305ADS
    Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available Qg (Typ.) • TrenchFET Power MOSFET


    Original
    si2305adso-236ot-23si2305ads-t1-e3+3si2305ads-t1-ge318-jul-0882713 PDF

    Contextual Info: SPICE Device Model Si2305CDS www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    si2305cds2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si2305adso-236ot-23si2305ads-t1-e3+4si2305ads-t1-ge32002/95/ec2011/65/eujs709a PDF

    SI2305CDS

    Abstract: SI2305 44A16
    Contextual Info: SPICE Device Model Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    si2305cds18-jul-08si230544a16 PDF

    Si2305DS

    Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "3.5 0.071 @ VGS = –2.5 V "3 0.108 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2305DS (A5)* *Marking Code


    Original
    si2305dso-236ot-23s-56947--rev+128-dec-98 PDF

    A5 sot-23 single DIODE

    Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 -8 0.071 at VGS = - 2.5 V ±3 0.108 at VGS = - 1.8 V ±2 • Halogen-free According to IEC 61249-2-21 Available


    Original
    si2305dso-236ot-23si2305ds-t1+4si2305ds-t1-e3si2305ds-t1-ge311-mar-11a5 sot-23 single diode PDF

    Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si2305adso-236ot-23si2305ads-t1-e3+3si2305ads-t1-ge370hay11-mar-11 PDF

    Si2305DS

    Abstract: Si2305DS SPICE Device Model
    Contextual Info: SPICE Device Model Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si2305ds07-may-01si2305ds spice device model PDF

    SI2305CDS

    Abstract: Si2305CDS-T1-GE3 marking sot-23 N5 p-channel
    Contextual Info: New Product Si2305CDS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G


    Original
    si2305cdso-236ot-232002/95/ec+3si2305cds-t1-ge318-jul-08marking sot-23 n5 p-channel PDF

    Si2305ADS

    Abstract: marking code vishay SILICONIX sot-23
    Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 Qg (Typ.) 7.8 nC • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    si2305adso-236ot-23si2305ads-t1-e3+208-apr-05marking code vishay siliconix sot-23 PDF

    SI2305CDS

    Abstract: n5 marking Si2305CDS-T1-GE3 N5 marking code
    Contextual Info: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    si2305cdso-236ot-232002/95/ec+4si2305cds-t1-ge318-jul-08n5 markingn5 marking code PDF

    Si2305DS

    Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "3.5 0.071 @ VGS = –2.5 V "3 0.108 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2305DS (A5)* *Marking Code


    Original
    si2305dso-236ot-2308-apr-05 PDF

    a5 marking

    Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ±3 RoHS* 0.108 at VGS = - 1.8 V ±2 COMPLIANT


    Original
    si2305dso-236ot-23si2305ds-t1+3si2305ds-t1-e318-jul-08a5 marking PDF

    si2305ads

    Contextual Info: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 Qg (Typ.) 7.8 nC • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    si2305adso-236ot-23si2305ads-t1-e3+118-jul-08 PDF

    Si2305CDS-T1-GE3

    Abstract: S10 SOT23 MARKING marking sot-23 N5 p-channel
    Contextual Info: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    si2305cds2002/95/eco-236ot-23+4si2305cds-t1-ge32011/65/eus10 sot23 markingmarking sot-23 n5 p-channel PDF

    Contextual Info: Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)d VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V - 5.8 -8 0.048 at VGS = - 2.5 V - 5.0 0.065 at VGS = - 1.8 V - 4.3 Qg (Typ.) 12 nC APPLICATIONS TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original
    si2305cdso-236ot-232002/95/ec+2si2305cds-t1-ge32011/65/eu PDF

    Si2305DS

    Contextual Info: SPICE Device Model Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si2305ds18-jul-08 PDF