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    TRANSISTOR ZO 105 Search Results

    TRANSISTOR ZO 105 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    		Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR ZO 105 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5596

    Abstract: motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
    Contextual Info: Order this document by AN1033/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1033 MATCH IMPEDANCES IN MICROWAVE AMPLIFIERS and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.


    Original     		AN1033/D AN1033 2N5596 motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors PDF

    6943-3

    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


    Original     		OT343 CFH800 Rn/50 6943-3 PDF

    transistor Zo 105

    Abstract: 6943-3 55086 HEMT marking P 05973
    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973 PDF

    transistor zo 107

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
    Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor PDF

    BCs 43 TRANSISTOR

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1
    Contextual Info: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.


    Original     		AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-8921E 5989-2645EN BCs 43 TRANSISTOR AT-32063-BLK AT-32063-TR1 PDF

    8 pin ic 3844 for 5 volts

    Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
    Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.


    Original     		AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107 PDF

    data sheet 702 TRANSISTOR npn

    Abstract: 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571
    Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS


    Original     		2SC4571 data sheet 702 TRANSISTOR npn 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571 PDF

    transistor 3506 nec

    Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter PDF

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor PDF

    transistor zo 107

    Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor PDF

    transistor on 4409

    Abstract: transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA 2SC5180
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units : mm S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz


    Original     		2SC5180 2SC5180 transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA PDF

    ic CD 4047

    Abstract: NEC D 809 F transistor NEC D 586 2SC5185 2SC5185-T1 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1 .3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		2SC5185 2SC5185-T1 2SC5185-T2 ic CD 4047 NEC D 809 F transistor NEC D 586 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662 PDF

    2Sc3355

    Abstract: 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter
    Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION •Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz


    Original     		2SC3355 S22e-FREQUENCY S21e-FREQUENCY S12e-FREQUENCY 2Sc3355 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter PDF

    NEC 2933

    Abstract: 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5183R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5183R NEC 2933 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722 PDF

    BFU540

    Abstract: SiGe POWER TRANSISTOR
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product specification Supersedes data of 2002 Jan 28 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 FEATURES PINNING • Very high power gain


    Original     		M3D124 BFU540 SCA75 613516/04/pp16 BFU540 SiGe POWER TRANSISTOR PDF

    nec 13772

    Abstract: 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5182 2SC5182-T1 SC-59 nec 13772 2SC5182 2SC5182-T1 2SC5182-T2 NEC 9715 PDF

    Nordmende

    Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
    Contextual Info: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    RD04HMS2

    Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
    Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445 PDF

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 PDF

    RD07MUS2B

    Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120 PDF

    transistor zo 607

    Abstract: 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		2SC5184 2SC5184-T2 transistor zo 607 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386 PDF

    SG 2368

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB typ.


    OCR Scan     		2SC5183 SC-61 2SC5183-T1 2SC5183-T2 SG 2368 PDF

    zo 103 ma

    Abstract: 2SC5247 transistor ECG 332 DSA003641
    Contextual Info: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz


    Original     		2SC5247 ADE-208-281 zo 103 ma 2SC5247 transistor ECG 332 DSA003641 PDF

    TRANSISTOR C 4460

    Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
    Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and


    Original     		AT-41511 AT-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 OT-23, TRANSISTOR C 4460 AT-41533 544 code marking amplifier zo 103 ma AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E PDF