TRANSISTOR X 58 Search Results

702 transistor smd code

Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Contextual Info: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Contextual Info: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor

Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

transistor smd marking KA

Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

702 TRANSISTOR smd

Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

of 828 Transistor

Abstract: transistor NEC K 946 nec d 588
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 1.8 mm x 0.59 mm: TYP.) • Contains same chip as 2SC5008

SAA 1251

Abstract: SAA 1025 SAA 1059 SAA 0358
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 i 0.1

C 5478 transistor

Abstract: 12205 transistor RF TRANSISTOR K 2191 IC AT 6884 transistor 7929 TRANSISTOR NPN 6822
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance

em 434

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super m ini-mold thin flat package 1.4 ± 0 .0 5 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) •

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.)

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ± 0 .0 5 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) •

marking code B2 SMD ic

Abstract: RENESAS marking code making code for transistor RENESAS marking code package smd TRANSISTOR code marking 013 smd code marking for japanese smd TRANSISTOR code marking e1 TRANSISTOR SMD MARKING CODE UA PXSF0006LA-A TRANSISTOR SMD MARKING CODE X D
Contextual Info: HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 Previous ADE-208-1449(Z Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent

TRANSISTOR 9642

Abstract: transistor s11 s12 s21 s22
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance

transistor NEC D 822 P

Abstract: LC 596 CP
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXJAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • . Contains same chip as 2SC5007

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 ± 0.1

NEC 2987

Abstract: transistor NEC B 617 transistor NEC D 822 P TL 1701 9418 transistor TL 431 0323
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • Contains same chip as 2S C 5010

d 1577

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) 1.4 ± 0 .0 5 0.8 • Contains same chip as 2SC5004

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ±0 05 (1.4 mm x 0,8 mm x 0.59 mm: TYP.) 0.8 ± 0.1 • Contains same chip as 2SC5195

ec2612 phemt

Abstract: EC2612
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

tam 0340

Contextual Info: b b 53^31 Philips Semiconductors □ □ 31 S 7 S TEb H A P X Product specification PNP 5 GHz wideband transistor 1 DESCRIPTION « N ArlER BFQ51 p h x l x p s / d i s CRETE b 'lE » PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF

Contextual Info: LtiS3T31 0035055 585 H A P X Philips Semiconductors N A PIER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor DESCRIPTION £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The