TRANSISTOR X 58 Search Results

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
Contextual Info: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700

smd transistor marking SL6

Abstract: SMD MARKING CODE hitachi HTT1213S marking code s21 SMD Transistor marking code e2 SMD Transistor SMD MARKING CODE sg 2SC5700 Hitachi transistor MARKING CODE SMD IC TRANSISTOR SMD fr
Contextual Info: HTT1213S Silicon NPN Epitaxial Twin Transistor ADE-208-1448 Z Preliminary Rev. 0 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6 (6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor

Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

of 828 Transistor

Abstract: transistor NEC K 946 nec d 588
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 1.8 mm x 0.59 mm: TYP.) • Contains same chip as 2SC5008

ST T8 3580

Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)

marking code B2 SMD ic

Abstract: RENESAS marking code making code for transistor RENESAS marking code package smd TRANSISTOR code marking 013 smd code marking for japanese smd TRANSISTOR code marking e1 TRANSISTOR SMD MARKING CODE UA PXSF0006LA-A TRANSISTOR SMD MARKING CODE X D
Contextual Info: HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 Previous ADE-208-1449(Z Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ±0 05 (1.4 mm x 0,8 mm x 0.59 mm: TYP.) 0.8 ± 0.1 • Contains same chip as 2SC5195

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

Contextual Info: It runJ L PWM STEP-UP DC/DC CONVERTER R H 5 R H X X 1 A / X X 2 B / X X 3 B S E R IE S •OUTLINE The RH5RH X X1A/X X 2B/X X3B Series are PWM Step-up DC/DC converter ICs by CMOS process. The RH5RHX X1AIC consists of an oscillator, a PWM control circuit, a driver transistor Lx switch , a refer­

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD PACKAGE DRAWINGS FEATURES • • Low Voltage O peration, Low Phase Distortion (U n it: m m ) Low Noise

s3331

Contextual Info: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily

TI 9023 IC data

Abstract: 2SC4226 APPLICATION NOTES
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS

sem 5025

Abstract: NEC JAPAN 2415 on 5297 transistor transistor d 13009 9622 transistor LA 7687 a La 7833 la 7687 t 3866
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /¿PA821TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 THIN-TYPE SMALL MINI MOLD The //PA821TF has 2 built-in low-voltage transistors which are PACKAGE DRAWINGS (Unit: mm)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

8313 transistor to-3

Abstract: board ccb2 kf 982 855E transistor Bf 981
Contextual Info: SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION Units in mm Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 IDEAL FOR 1-3 GHz OSCILLATORS 1 2 0.4 0.8 3 The UPA895TD contains two NE851 high frequency silicon

ASI10573

Abstract: AVF350
Contextual Info: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks

transistor ac51

Abstract: NFEN55011 EN61000-4-2 SCM030200
Contextual Info: celduc r e l a i S/CON/SCM030200/B/07/06/04 s PRELIMINARY !! Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM030200 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

Transistor S 40443

Contextual Info: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures

nec 16312

Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (U nit: mm) Low noise NF = 1 .3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz

dupline d 1500

Abstract: npn transistor FRS transceiver "NPN Transistor"
Contextual Info: Du line Transceiver for Digital Signals Type GXD 1500 Fieldbus Installationbus • 8-channel transceiver • 4 contact or NPN transistor inputs • 4 NPN transistor outputs sink • Load: 4 x 100 mA/30 VDC • D-housing • Plug-in type module • LED-indications for supply, transmission and

Contextual Info: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor £ Product specification BFG93A; BFG93A/X; BFG93A/XR N AUER PHILIPS/DISCRETE b?E » “ PINNING FEATURES PIN • High power gain DESCRIPTION 4 3 BFG93A Fig.1 Code: R8 • Low noise figure

GT15N101

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15N101 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15.9 MAX 02 l2±O.2 . High Input Impedance . High Speed : tf=1 *O y s M a x , . Low Saturation Voltage : V c e (s a t ) ~ 5•0 V ( M a x .)

539 MOTOROLA transistor

Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
Contextual Info: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con­

Contextual Info: ISOCOM COMPONENTS LTD 45E D • HfiûbSlO 0DÜD5Ô2 T « I S O | S F H 60 0-0X, S F H 60 0-1X, S F H 60 0 -2 X, S F H 6 0 0-3 X, S F H 600-4 X *iti ii; j. ¡jij • I. H l’iif '1'>•?• SM *-*’. | ISOCOM Hi OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT