Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC5436 Search Results

    2SC5436 Datasheets (5)

    NEC
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC5436
    NEC NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION Original PDF 81.24KB 12
    2SC5436
    NEC Semiconductor Selection Guide Original PDF 3MB 399
    2SC5436EB
    NEC NPN Epitaxial Silicon Transistor for High-frequency Low-noise Amplification Flat-lead 3-pin Thin-type Ultra Super Minimold Original PDF 73.32KB 12
    2SC5436-T1
    NEC NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYP Original PDF 73.33KB 12
    2SC5436-T1
    NEC Reduced noise high frequency amplification transistor Original PDF 81.23KB 12

    2SC5436 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5436

    Abstract: 2SC5668
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)


    Original
    pa844tc2sc54362sc5668s21e2+1pa844 PDF

    2SC5436

    Abstract: 2SC5600 NEC 821
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original
    pa842tc2sc54362sc5600s21e2+1nec 821 PDF

    2SC5436

    Abstract: 2SC5786 4550 nec IC 7432 data
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor


    Original
    pa861tc2sc54362sc5786s21e2+24550 necic 7432 data PDF

    marking TN

    Abstract: transistor c 5083 2SC5186 2SC5436
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.)


    Original
    2sc5436marking tntransistor c 50832sc5186 PDF

    2SC5436

    Abstract: 2SC5800 low vce transistor
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original
    pa863ts2sc54362sc5800s21e2+1low vce transistor PDF

    Contextual Info: NPN SILICON RF TWIN TRANSISTOR PA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original
    pa861td2sc54362sc5786s21e2+1pu10057ej02v0ds PDF

    2SC5186

    Abstract: 2SC5436 2SC5436-T1 nec 7440
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package


    Original
    2sc54362sc51862sc5436-t1nec 7440 PDF

    2SC5436

    Abstract: 2SC5800 uPA863TD-Q2
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original
    pa863td2sc54362sc5800s21e2+1upa863td-q2 PDF

    MARKING 6260

    Abstract: 2SC5436 2SC5800 P1573 uPA863TC-T1
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: High gain transistor suited for buffer applications


    Original
    pa863tc2sc54362sc5800s21e2+3marking 6260p1573upa863tc-t1 PDF

    ZO 607 MA

    Abstract: 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5436, 2SC5600)


    Original
    pa842tc2sc54362sc5600s21e2+8zo 607 ma421-5rf npn power transistor c 10-12 ghz552-1741 ic data sheet901 704 16 08 55a 3120 0532 8 pina 3120 0537 PDF

    14-802-12

    Abstract: 2SC5786 2SC5436
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original
    pa861td2sc54362sc5786s21e2+114-802-12 PDF

    nec d 882 p transistor

    Abstract: 2SC5436 2SC5668
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)


    Original
    pa844tc2sc54362sc5668s21e2+2pa844cenec d 882 p transistor PDF

    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.)


    OCR Scan
    2sc54362sc5186 PDF

    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original
    pa863ts2sc54362sc5800pu10333ej02v0ds PDF

    2SC5436

    Abstract: 2SC5786
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original
    pa861td2sc54362sc5786s21e2 PDF

    2SC5436

    Abstract: NESG2107M33
    Contextual Info: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA868TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor


    Original
    pa868ts2sc5436nesg2107m33s21e2 PDF

    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original
    pa863td2sc54362sc5800p15686ej1v0ds PDF

    st zo 607

    Abstract: 2SC5436 2SC5800 30614
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original
    pa863td2sc54362sc5800s21e2+2st zo 60730614 PDF

    nec A1394

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    nec a1394 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Transistor a1488

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    transistor a1488 PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original
    r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original
    od-80od123/323ot-23ot346+16ot-323ot-416ot-223ot-89ot-143ot-363smd code booktransistor smd p1fmarking code w16 smd transistortransistor smd marking code jgsmd transistor ww1transistor smd a7sdiode smd l4wsmd diode zener code pj 78smd transistor wv4motorola transistor smd marking codes PDF