TRANSISTOR WM Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network

Contextual Info: BUD620 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

transistor WMM

Contextual Info: BUD744 wMm? Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

Contextual Info: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

Contextual Info: BUD630 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

Contextual Info: BUD725D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Very low switching losses • • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation HIGH SPEED technology

transistor smd yw

Contextual Info: BUD616A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

Contextual Info: BUD7312 wmm t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

A65 smd transistor

Abstract: transistor smd za
Contextual Info: BUD700D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate •

transistor SMD wm

Contextual Info: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

Contextual Info: BUF646 • BUF646A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

cd 1191 cb

Abstract: CD 1691 CB
Contextual Info: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per­

transistor marking WV2

Contextual Info: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

Contextual Info: BUD742 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A

2N2369A

Abstract: 2n2369a philips TU-T2
Contextual Info: N AMER PHILIPS/DISCRETE bTE bbSBTBl DDEÔDT? ?Db WM APX 11 2N2369A | i SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope primarily intended for high-speed saturated switching and high frequency amplifier applications. QUICK REFERENCE DATA

Contextual Info: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

BUK445-100A

Abstract: 1E05 BUK445 BUK445-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

Silicon Transistor Corp

Abstract: 2950 transistor
Contextual Info: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS

Contextual Info: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers

2N3054

Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054
Contextual Info: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable

transistor D 4515

Abstract: 100-P BUK556-60A A1730
Contextual Info: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

TRANSISTOR b77

Abstract: 4312.020 transistor tt 2222 BLV92
Contextual Info: PHILIPS INTERNATIONAL bSE J> WM 711DöSb DDb303S 50T BLV92 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use In mobile radio transmitters In the 9 0 0 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

BLV99

Contextual Info: PHILIPS INTERNATIONAL b5E ]> WM 711005b 0Gb30ûb 771 M P H I N BLV99 Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use as a driver-stage in base stations in the 90 0 M H z communications band. Features: • emitter-ballasting resistors fo r an optim um temperature profile