TRANSISTOR WM Search Results

Contextual Info: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

transistor smd yw

Contextual Info: BUD616A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

transistor j6

Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Contextual Info: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

transistor BUF640

Contextual Info: BUF640 • BUF640A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

Contextual Info: BUD742 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A

BUK445-100A

Abstract: 1E05 BUK445 BUK445-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

transistor D 4515

Abstract: 100-P BUK556-60A A1730
Contextual Info: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUF630

Contextual Info: _ BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses

c151i

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT223 PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT a > N-channel enhancement mode fiefd-effect power transistor in a plastic envelope suitable for surface

BUD630

Contextual Info: Temic BUD630 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature

BUK455-200B

Abstract: BUK455 BUK455-200A T0220AB TIL51
Contextual Info: Philips Components BUK455-200A BUK455-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-elfect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUX15

Abstract: TRANSISTOR BUX 37 transistor BUX
Contextual Info: *BUX15 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IF F U S E D TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension

Contextual Info: BUF653 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

transistor 152 M

Contextual Info: KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH f i POWER TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tc= 2 5 ° C | Junction Temperature

inverters dc ac

Abstract: transistor 1654 KS621260 S-85 S-86 powerex ks62
Contextual Info: POWEREX KS621260 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 600 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

BVJ 47

Abstract: transistor B42 BUK442 BUK442-60A BUK442-60B 3909 d044
Contextual Info: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PowerMOS transistor SbE T> INTERNATIONAL PHILIPS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope,

Contextual Info: BUF7216 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

Contextual Info: BUF650 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

BUF725

Contextual Info: BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate

bf998 Mop

Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

BUK442

Abstract: BUK442-60A BUK442-60B 1e47
Contextual Info: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE T> INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a lastic full-pack envelope,

K545

Abstract: BUK545 BUK545-200A BUK545-200B
Contextual Info: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPSH24 14E D §7*14,41*45 0007337 fl J NPN EPITAXIAL SILICON TRANSISTOR T-31-19 VHF TRANSISTOR ABSOLUTE M AXIM UM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage CoUector-Emitter Voltage Emitter-Base Voltage Collector Current

BUK444-450B

Abstract: 0203F
Contextual Info: 2SE N AMER PHILIPS/DISCRETE D ^53^31 & 00203b5 PowerMOS transistor BUK444-450B T '3 7 ~ 0 ? GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in