TRANSISTOR WES Search Results

foto sensor

Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

foto sensor

Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

IC 3130

Abstract: 4110 P525 Q62702-P5250 GEOY6976
Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

2N2464

Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
Contextual Info: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO

JLN 2003

Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

2N2464

Abstract: transistor 2n2270 2N6369 D 756 transistor
Contextual Info: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

package LCC-3

Abstract: shd4313
Contextual Info: SHD431003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 844, REV. A Formerly part number SHD4313 SMALL SIGNAL, HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A SINGLE, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR

2SA1646

Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

Contextual Info: SHD432003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 845, REV. B Formerly part number SHD4323 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A DUAL, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-6 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR

Contextual Info: SHD431003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 844, REV. – Formerly part number SHD4313 SMALL SIGNAL, HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A SINGLE, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR

shd4323

Contextual Info: SHD432003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 845, REV. A Formerly part number SHD4323 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A DUAL, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-6 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

2222 031 capacitor philips 2222 424

Abstract: 2222 031 capacitor philips BLF247B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

Contextual Info: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

NP180N055

Abstract: NP180N055TUJ
Contextual Info: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

NP180N04TUJ

Abstract: TO-263-7pin
Contextual Info: Preliminary Data Sheet NP180N04TUJ R07DS0180EJ0100 Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 Jun 30, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: SENSITRON SEMICONDUCTOR SHD432101D TECHNICAL DATA DATA SHEET 800, REV - DUAL HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTOR DESCRIPTION: A DUAL NPN, HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTOR IN A HERMETIC CERAMIC SURFACE MOUNT LCC-6 PACKAGE. MAXIMUM RATINGS