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Contextual Info: Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 Jun 30, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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NP33N075YDF
Contextual Info: Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 Jun 30, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance
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np33n075ydfr07ds0363ej0100aec-q101np33n075ydf-e1-ay+1np33n075ydf-e2-ay
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2sk4145
Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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sc-62/sot-89sc-84sc-95/sot-6sc-96+16ot-23ot-23fo-252zo-252zko-252zpo-263zj2sk41452sk4075upa27242sk42122sk4213upa2804t1l2sk4145-s192sk4202upa22112sk3919
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2sk4145
Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Contextual Info: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P)
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sc-62/sot-89sc-84sc-95/sot-6sc-96+16ot-23ot-23fo-252zo-252zko-252zpo-263zj2sk41452sk40752sk4213upa2591t1h2sk4202upa2804t1lupa2727t1amosfet 2sk4145upa1914te-t12sk4080
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R2A11301FT
Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
Contextual Info: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV
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/533mhzbga-832bga-472bga-429+12bga-720bga-653r2a11301ftsh7766r2a25108kfp2sc5664powervr sgx530powervr sgx540car ecu wiring system service manualr2a25104kfpv850e2 fx4dj4 renesas
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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r07cs0003ej0200rjj0319dspbcr8pm equivalentrjp30h2+7n0201rjj0319np109n055pujrjk5020rjp30e2dppnp75n04yuglg washing machine circuit diagram
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RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position
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0000-apae-aa-12-0177-1pae-aa-12-0049-1rjk03p7dpa+9np109n055pujrjh60d7bdpqrjh60t04rjp65t43np75n04yugnp60n055muknp109n04pukrju6052sdpd-e0ps2761b-1
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UPD70F3524
Abstract: uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526
Contextual Info: www.renesas.eu 2010.04 Product Scout Automotive fro s t c du o r p ws y! l o n h s o ew ics i n v o r r e t c ov e l s i E h C T E N r e form m Before actually using the product, Renesas urges users to refer to the latest product manual and/or data sheet in advance.
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x19136ee4v0pf0078k0/kb2pd78f0513ad78k0/kc2+1678k0/kd278k0/ke278k0/kf278k0/fy2-l78k0/fa2-l78k0/fb2-lupd70f3524upd70f3525upd70f3526upd70f3529upd70f3508upd70f3523upd70f3506upd166017upd70f35v850e2 upd70f3526
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NP75P04
Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG
Contextual Info: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:
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"seat heater"
Abstract: np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG
Contextual Info: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 mΩ • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:
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aec-q101o-220o-262o-263zj+16o-251o-252zo-263zko-220mo-262no-263zpseat heaternp28n10sdenp32n055slenp100n055pdhnp74n04yugnp50p06sdgnp100n055muhnp15p04slgnp36n055slenp36p06slg
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